Authors: Pusl, J Sridharan, S Antognetti, P Helms, D Nigam, A Griffiths, J Louie, K Doherty, M

Citation: J. Pusl et al., SiGe power amplifier ICs with SWR protection for handset applications, MICROWAVE J, 44(6), 2001, pp. 100

Authors: Jenkins, TJ Kehias, L Parikh, P Ibbetson, J Mishra, U Docter, D Le, M Pusl, J Widman, D

Citation: Tj. Jenkins et al., Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology, IEEE J SOLI, 34(9), 1999, pp. 1239-1245

Authors: Parikh, P Ibbetson, J Mishra, U Docter, D Le, M Kiziloglu, K Grider, D Pusl, J Widman, D Kehias, L Jenkins, T

Citation: P. Parikh et al., Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications, IEEE MICR T, 46(12), 1998, pp. 2202-2207