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Results:
1-12
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Results: 12
Authors:
HUANG JY
YE ZZ
LU HM
JIANG XB
WU HZ
ZHAO BH
WANG L
QUE DL
Citation: Jy. Huang et al., SIGE EPITAXY WITH GRADED BUFFER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION, Chinese Physics Letters, 15(9), 1998, pp. 692-694
Authors:
QIU M
CAO PL
QUE DL
Citation: M. Qiu et al., THE ADSORPTION AND DISSOCIATION OF AMMONIA ON SMALL SI CLUSTERS SURFACE, Surface science, 395(2-3), 1998, pp. 260-267
Authors:
LU HM
YANG DR
LI LB
YE ZZ
QUE DL
Citation: Hm. Lu et al., THERMAL WARPAGE OF CZOCHRALSKI SILICON-WAFERS GROWN UNDER A NITROGEN AMBIENCE, Physica status solidi. a, Applied research, 169(2), 1998, pp. 193-198
Authors:
WU HZ
HUANG JY
YE ZZ
JIANG XB
SHOU X
QUE DL
Citation: Hz. Wu et al., STRAIN RELAXATION IN GRADED SIGE GROWN BY ULTRA-HIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION (UHVCVD), Journal of crystal growth, 191(1-2), 1998, pp. 72-78
Authors:
ZHANG XW
YANG DR
FAN RX
ZHANG JX
QUE DL
Citation: Xw. Zhang et al., EFFECT OF IRON ON OXYGEN PRECIPITATION IN NITROGEN-DOPED CZOCHRALSKI SILICON, Journal of applied physics, 84(10), 1998, pp. 5502-5505
Authors:
HUANG JY
YE ZZ
LU HM
QUE DL
Citation: Jy. Huang et al., CALCULATION OF CRITICAL LAYER THICKNESS CONSIDERING THERMAL STRAIN INSI1-XGEX SI STRAINED-LAYER HETEROSTRUCTURES/, Journal of applied physics, 83(1), 1998, pp. 171-173
Authors:
QIU M
LEE LQ
CAO PL
QUE DL
Citation: M. Qiu et al., THE ADSORPTION AND DISSOCIATION OF AMMONIA ON THE SI-10 CLUSTER-SURFACE, Journal of physics. Condensed matter, 9(31), 1997, pp. 6543-6553
Authors:
ZHANG XW
YANG JS
BENLI L
QUE DL
Citation: Xw. Zhang et al., GENERATION AND DISSOCIATION OF THE NITROGEN-RELATED DONOR IN NITROGEN-DOPED CZ-SI DURING HEAT-TREATMENTS, Physica status solidi. a, Applied research, 155(1), 1996, pp. 189-194
Authors:
YANG DR
FAN RX
LI LB
QUE DL
SUMINO K
Citation: Dr. Yang et al., DONOR FORMATION IN NITROGEN-DOPED SILICON, Journal of applied physics, 80(3), 1996, pp. 1493-1498
Authors:
YANG DR
FAN RX
LI LB
QUE DL
SUMINO K
Citation: Dr. Yang et al., EFFECT OF NITROGEN-OXYGEN COMPLEX ON ELECTRICAL-PROPERTIES OF CZOCHRALSKI SILICON, Applied physics letters, 68(4), 1996, pp. 487-489
Authors:
MA XY
CHEN LD
JI ZG
YAO HN
QUE DL
Citation: Xy. Ma et al., PHOTOLUMINESCENCE OF A SILICON-OXIDE FILM FORMED BY ANODIZATION IN THE ELECTROPOLISHING REGION IN HF SOLUTION, Journal of physics. Condensed matter, 7(14), 1995, pp. 2901-2907
Authors:
YANG D
QUE DL
SUMINO K
Citation: D. Yang et al., NITROGEN EFFECTS ON THERMAL DONOR AND SHALLOW THERMAL DONOR IN SILICON, Journal of applied physics, 77(2), 1995, pp. 943-944
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