ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-50 | 51-67

Results: 26-50/67

LOW-TEMPERATURE ELECTRICAL-TRANSPORT PROPERTIES OF SINGLE-CRYSTAL BISMUTH-FILMS UNDER PRESSURE

Authors: LU M ZIEVE RJ VANHULST A JAEGER HM ROSENBAUM TF RADELAAR S

Citation: M. Lu et al., LOW-TEMPERATURE ELECTRICAL-TRANSPORT PROPERTIES OF SINGLE-CRYSTAL BISMUTH-FILMS UNDER PRESSURE, Physical review. B, Condensed matter, 53(3), 1996, pp. 1609-1615

CHARACTERIZATION OF SINGLE-CRYSTALLINE AL FILMS GROWN ON SI(111)

Authors: FORTUIN AW ALKEMADE PFA VERBRUGGEN AH STEINFORT AJ ZANDBERGEN H RADELAAR S

Citation: Aw. Fortuin et al., CHARACTERIZATION OF SINGLE-CRYSTALLINE AL FILMS GROWN ON SI(111), Surface science, 366(2), 1996, pp. 285-294

GAS-SOURCE MBE GROWTH OF SI SIGE DEVICE MATERIALS/

Authors: WERNER K STORM A BUTZKE S MAES JW VANROOY M ALKEMADE P ALGRA E SOMERS M DELANGE B VANDERDRIFT E ZIJLSTRA T RADELAAR S

Citation: K. Werner et al., GAS-SOURCE MBE GROWTH OF SI SIGE DEVICE MATERIALS/, Journal of crystal growth, 164(1-4), 1996, pp. 223-234

THE HYDROGEN REDUCTION OF WF6 - A KINETIC-STUDY BASED ON IN-SITU PARTIAL-PRESSURE MEASUREMENTS

Authors: OOSTERLAKEN TGM LEUSINK GJ JANSSEN GCAM RADELAAR S

Citation: Tgm. Oosterlaken et al., THE HYDROGEN REDUCTION OF WF6 - A KINETIC-STUDY BASED ON IN-SITU PARTIAL-PRESSURE MEASUREMENTS, Journal of the Electrochemical Society, 143(5), 1996, pp. 1668-1675

TECHNOLOGY FOR HIGH-PERFORMANCE N-CHANNEL SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS

Authors: KUZNETSOV VI VONVEEN R VANDERDRIFT E WERNER K VERBRUGGEN AH RADELAAR S

Citation: Vi. Kuznetsov et al., TECHNOLOGY FOR HIGH-PERFORMANCE N-CHANNEL SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2892-2896

IN-SITU X-RAY-DIFFRACTION STUDY OF THE FORMATION OF TISI2-C49 PHASE FROM TI-SI MULTILAYERS ON SI(100)

Authors: SARIEL J CHEN HD JONGSTE JF RADELAAR S

Citation: J. Sariel et al., IN-SITU X-RAY-DIFFRACTION STUDY OF THE FORMATION OF TISI2-C49 PHASE FROM TI-SI MULTILAYERS ON SI(100), Materials chemistry and physics, 40(2), 1995, pp. 82-86

INFLUENCE OF MIXED REDUCTANTS ON THE GROWTH-RATE OF WF6-BASED W-CVD

Authors: JONGSTE JF OOSTERLAKEN TGM LEUSINK GJ VANDERJEUGD CA JANSSEN GCAM RADELAAR S

Citation: Jf. Jongste et al., INFLUENCE OF MIXED REDUCTANTS ON THE GROWTH-RATE OF WF6-BASED W-CVD, Applied surface science, 91(1-4), 1995, pp. 162-168

STRESS IN AL, ALSICU, AND ALVPD FILMS ON OXIDIZED SI SUBSTRATES

Authors: LEUSINK GJ LOKKER JP VANDENHOMBERG MJC JONGSTE JF OOSTERLAKEN TGM JANSSEN GCAM RADELAAR S

Citation: Gj. Leusink et al., STRESS IN AL, ALSICU, AND ALVPD FILMS ON OXIDIZED SI SUBSTRATES, Applied surface science, 91(1-4), 1995, pp. 215-219

FABRICATION OF SUBMICRON SI SIGE DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES/

Authors: LUKEY PW CARO J GEERLIGS LJ WERNER K RADELAAR S

Citation: Pw. Lukey et al., FABRICATION OF SUBMICRON SI SIGE DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES/, Microelectronic engineering, 27(1-4), 1995, pp. 87-90

FABRICATION OF 100 NM POLYSILICON-EMITTER TRANSISTORS USING E-BEAM LITHOGRAPHY

Authors: WEBSTER MN TUINHOUT A VERBRUGGEN AH ROMIJN J RADELAAR S LOCHEL B JOS HFF MOORS PMA

Citation: Mn. Webster et al., FABRICATION OF 100 NM POLYSILICON-EMITTER TRANSISTORS USING E-BEAM LITHOGRAPHY, Microelectronic engineering, 27(1-4), 1995, pp. 91-94

NANOFABRICATION OF SI POINT CONTACTS USING GAS-SOURCE MBE - TOWARDS SINGLE-CRYSTALLINE DEVICES

Authors: MAES JWH HEUVELMAN W CARO J WERNER K ZANDBERGEN HW RADELAAR S

Citation: Jwh. Maes et al., NANOFABRICATION OF SI POINT CONTACTS USING GAS-SOURCE MBE - TOWARDS SINGLE-CRYSTALLINE DEVICES, Microelectronic engineering, 27(1-4), 1995, pp. 99-103

FABRICATION OF SINGLE-CRYSTALLINE ALUMINUM NANOSTRUCTURES

Authors: FORTUIN AW VANDERKOLK M ZIJLSTRA T VERBRUGGEN AH RADELAAR S

Citation: Aw. Fortuin et al., FABRICATION OF SINGLE-CRYSTALLINE ALUMINUM NANOSTRUCTURES, Microelectronic engineering, 27(1-4), 1995, pp. 117-120

XPS STUDY ON DRY-ETCHING OF SI GEXSI1-X

Authors: VANDERDRIFT E ZIJLSTRA T FAKKELDIJ EJM CHEUNG R WERNER K RADELAAR S

Citation: E. Vanderdrift et al., XPS STUDY ON DRY-ETCHING OF SI GEXSI1-X, Microelectronic engineering, 27(1-4), 1995, pp. 481-485

EPITAXIAL-GROWTH OF BISMUTH-FILMS AND BISMUTH-ANTIMONY HETEROSTRUCTURES

Authors: VANHULST JA JAEGER HM RADELAAR S

Citation: Ja. Vanhulst et al., EPITAXIAL-GROWTH OF BISMUTH-FILMS AND BISMUTH-ANTIMONY HETEROSTRUCTURES, Physical review. B, Condensed matter, 52(8), 1995, pp. 5953-5961

ROUGHENING OF SIGE LAYERS GROWN WITH GAS-SOURCE MBE - DEPENDENCE ON GE CONCENTRATION AND GROWTH TEMPERATURE

Authors: STORM AB LUKEY PW WERNER K CARO J RADELAAR S

Citation: Ab. Storm et al., ROUGHENING OF SIGE LAYERS GROWN WITH GAS-SOURCE MBE - DEPENDENCE ON GE CONCENTRATION AND GROWTH TEMPERATURE, Journal of crystal growth, 157(1-4), 1995, pp. 312-316

THE EFFECT OF DOPING ATOMS ON THE KINETICS OF SELF-LIMITING TUNGSTEN FILM GROWTH ON SILICON BY REDUCTION OF TUNGSTEN HEXAFLUORIDE

Authors: VANDERJEUGD CA LEUSINK GJ OOSTERLAKEN TGM JONGSTE JF JANSSEN GCAM RADELAAR S

Citation: Ca. Vanderjeugd et al., THE EFFECT OF DOPING ATOMS ON THE KINETICS OF SELF-LIMITING TUNGSTEN FILM GROWTH ON SILICON BY REDUCTION OF TUNGSTEN HEXAFLUORIDE, Journal of the Electrochemical Society, 142(4), 1995, pp. 1326-1332

CRITICAL CURRENT-LENGTH PRODUCT FOR ELECTROMIGRATION-INDUCED RESISTANCE CHANGES IN SHORT AL LINES

Authors: KRAAYEVELD JR VERBRUGGEN AH WILLEMSEN AWJ RADELAAR S

Citation: Jr. Kraayeveld et al., CRITICAL CURRENT-LENGTH PRODUCT FOR ELECTROMIGRATION-INDUCED RESISTANCE CHANGES IN SHORT AL LINES, Applied physics letters, 67(9), 1995, pp. 1226-1228

SILICON POINT CONTACTS - NANOFABRICATION, MOLECULAR-BEAM EPITAXIAL-GROWTH, AND TRANSPORT MEASUREMENTS

Authors: MAES JWH CARO J WERNER K RADELAAR S KOZUB VI ZANDBERGEN HW

Citation: Jwh. Maes et al., SILICON POINT CONTACTS - NANOFABRICATION, MOLECULAR-BEAM EPITAXIAL-GROWTH, AND TRANSPORT MEASUREMENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3614-3618

WEAK-LOCALIZATION AND CORRELATION-EFFECTS IN A 2-DIMENSIONAL HOLE GASIN SI SI1-XGEX HETEROSTRUCTURES/

Authors: CHEUNG R GEERLIGS LJ CARO J VERBRUGGEN AH WERNER K RADELAAR S

Citation: R. Cheung et al., WEAK-LOCALIZATION AND CORRELATION-EFFECTS IN A 2-DIMENSIONAL HOLE GASIN SI SI1-XGEX HETEROSTRUCTURES/, Physica. B, Condensed matter, 194, 1994, pp. 1225-1226

CAPILLARY ARRAYS WITH VARIABLE CHANNEL DENSITY - AN IMPROVED GAS INJECTION SYSTEM

Authors: SCHEINOWITZ DA WERNER K RADELAAR S

Citation: Da. Scheinowitz et al., CAPILLARY ARRAYS WITH VARIABLE CHANNEL DENSITY - AN IMPROVED GAS INJECTION SYSTEM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3228-3232

REACTIVE ION ETCHING MECHANISM STUDY ON SI GEXSI1-X/

Authors: VANDERDRIFT E ZIJLSTRA T CHEUNG R WERNER K RADELAAR S

Citation: E. Vanderdrift et al., REACTIVE ION ETCHING MECHANISM STUDY ON SI GEXSI1-X/, Microelectronic engineering, 23(1-4), 1994, pp. 343-348

METALLIZATION OF SUBMICRON MICROWAVE BIPOLAR-TRANSISTORS BY ELECTROPLATING

Authors: WEBSTER MN TUINHOUT A LOCHEL B VERBRUGGEN AH ROMIJN J VANDERDRIFT E RADELAAR S JOS HFF MOORS PMA

Citation: Mn. Webster et al., METALLIZATION OF SUBMICRON MICROWAVE BIPOLAR-TRANSISTORS BY ELECTROPLATING, Microelectronic engineering, 23(1-4), 1994, pp. 441-444

MESOSCOPIC SILICON COUPLED SUPERCONDUCTING JUNCTIONS OF COSI2 FORMED IN A SELF-ALIGNED PROCESS

Authors: HILBRANDIE GR BAKKER SJM VANDERDRIFT E ROUSSEEUW BAC KLAPWIJK TM RADELAAR S

Citation: Gr. Hilbrandie et al., MESOSCOPIC SILICON COUPLED SUPERCONDUCTING JUNCTIONS OF COSI2 FORMED IN A SELF-ALIGNED PROCESS, Microelectronic engineering, 23(1-4), 1994, pp. 445-448

PROCEEDINGS OF THE INTERNATIONAL-CONFERENCE ON MICROFABRICATION - SEPTEMBER 26-29, 1993 MAASTRICHT, THE NETHERLANDS

Authors: RADELAAR S ROMIJN J VANDERDRIFT E

Citation: S. Radelaar et al., PROCEEDINGS OF THE INTERNATIONAL-CONFERENCE ON MICROFABRICATION - SEPTEMBER 26-29, 1993 MAASTRICHT, THE NETHERLANDS, Microelectronic engineering, 23(1-4), 1994, pp. 180000007-180000007

OBSERVATION OF CARRIER-CONCENTRATION-DEPENDENT REFLECTIONLESS TUNNELING IN A SUPERCONDUCTOR 2-DIMENSIONAL-ELECTRON-GAS SUPERCONDUCTOR STRUCTURE

Authors: BAKKER SJM VANDERDRIFT E KLAPWIJK TM JAEGER HM RADELAAR S

Citation: Sjm. Bakker et al., OBSERVATION OF CARRIER-CONCENTRATION-DEPENDENT REFLECTIONLESS TUNNELING IN A SUPERCONDUCTOR 2-DIMENSIONAL-ELECTRON-GAS SUPERCONDUCTOR STRUCTURE, Physical review. B, Condensed matter, 49(18), 1994, pp. 13275-13278

Risultati: 1-25 | 26-50 | 51-67