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Results: 4
SURFACE MODIFICATION OF N-GAAS BY 50 MEV SILICON IONS
Authors:
HULLAVARAD SS RAILKAR TA BHORASKAR SV MADUKUMAR P GOKAMA AS BHORASKAR VN BADRINARAYANAN S PAWASKAR NR
Citation:
Ss. Hullavarad et al., SURFACE MODIFICATION OF N-GAAS BY 50 MEV SILICON IONS, Journal of applied physics, 83(4), 1998, pp. 1962-1966
DETECTION OF METAL-INDUCED GAP STATES IN SILICON
Authors:
RAILKAR TA BHORASKAR SV
Citation:
Ta. Railkar et Sv. Bhoraskar, DETECTION OF METAL-INDUCED GAP STATES IN SILICON, Applied physics letters, 66(8), 1995, pp. 974-975
CRYSTALLITE-SIZE-DEPENDENT CHARACTERISTICS OF POROUS SILICON
Authors:
BHORASKAR SV BHAVE T RAILKAR TA
Citation:
Sv. Bhoraskar et al., CRYSTALLITE-SIZE-DEPENDENT CHARACTERISTICS OF POROUS SILICON, Bulletin of Materials Science, 17(5), 1994, pp. 523-531
DEFECT STUDIES IN OXYGEN-ION-IRRADIATED SILICON-BASED METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
Authors:
RAILKAR TA BHORASKAR SV DHOLE SD BHORASKAR VN
Citation:
Ta. Railkar et al., DEFECT STUDIES IN OXYGEN-ION-IRRADIATED SILICON-BASED METAL-INSULATOR-SEMICONDUCTOR STRUCTURES, Journal of applied physics, 74(7), 1993, pp. 4343-4346
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