Authors:
CARTERCOMAN C
BROWN AS
JOKERST NM
DAWSON DE
BICKNELLTASSIUS R
FENG ZC
RAJKUMAR KC
DAGNALL G
Citation: C. Cartercoman et al., STRAIN ACCOMMODATION IN MISMATCHED LAYERS BY MOLECULAR-BEAM EPITAXY -INTRODUCTION OF A NEW COMPLIANT SUBSTRATE TECHNOLOGY, Journal of electronic materials, 25(7), 1996, pp. 1044-1048
Authors:
KONKAR A
RAJKUMAR KC
XIE Q
CHEN P
MADHUKAR A
LIN HT
RICH DH
Citation: A. Konkar et al., IN-SITU FABRICATION OF 3-DIMENSIONALLY CONFINED GAAS AND INAS VOLUMESVIA GROWTH ON NONPLANAR PATTERNED GAAS(001) SUBSTRATES, Journal of crystal growth, 150(1-4), 1995, pp. 311-316
Authors:
RAJKUMAR KC
MADHUKAR A
CHEN P
KONKAR A
CHEN L
RAMMOHAN K
RICH DH
Citation: Kc. Rajkumar et al., REALIZATION OF 3-DIMENSIONALLY CONFINED STRUCTURES VIA ONE-STEP IN-SITU MOLECULAR-BEAM EPITAXY ON APPROPRIATELY PATTERNED GAAS(111)B AND GAAS(001), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1071-1074