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Results: 1-18 |
Results: 18
THERMOGRAPHIC SAMPLING TECHNIQUE APPLIED TO MICROELECTRONICS AND PHOTOVOLTAIC DEVICES
Authors: RAPPICH J MUELLER M SCHNEIDER F TRIBUTSCH H
Citation: J. Rappich et al., THERMOGRAPHIC SAMPLING TECHNIQUE APPLIED TO MICROELECTRONICS AND PHOTOVOLTAIC DEVICES, Solar energy materials and solar cells, 53(3-4), 1998, pp. 205-215
EXPRESS CHARACTERIZATION OF INDIRECT SEMICONDUCTOR SURFACES BY IN-SITU PHOTOLUMINESCENCE DURING CHEMICAL AND ELECTROCHEMICAL TREATMENTS
Authors: TIMOSHENKO VY RAPPICH J DITTRICH T
Citation: Vy. Timoshenko et al., EXPRESS CHARACTERIZATION OF INDIRECT SEMICONDUCTOR SURFACES BY IN-SITU PHOTOLUMINESCENCE DURING CHEMICAL AND ELECTROCHEMICAL TREATMENTS, Applied surface science, 123, 1998, pp. 111-114
UNUSUAL STABILIZATION OF SI SURFACES DURING ROUGHENING IN FLUORIDE SOLUTION
Authors: DITTRICH T TIMOSHENKO VY RAPPICH J
Citation: T. Dittrich et al., UNUSUAL STABILIZATION OF SI SURFACES DURING ROUGHENING IN FLUORIDE SOLUTION, Applied physics letters, 72(13), 1998, pp. 1635-1637
IN-SITU PHOTOLUMINESCENCE ANALYSIS OF NONRADIATIVE RECOMBINATION ON SILICON SURFACES TREATED IN FLUORIDE SOLUTION
Authors: TIMOSHENKO VY RAPPICH J DITTRICH T
Citation: Vy. Timoshenko et al., IN-SITU PHOTOLUMINESCENCE ANALYSIS OF NONRADIATIVE RECOMBINATION ON SILICON SURFACES TREATED IN FLUORIDE SOLUTION, JPN J A P 2, 36(1AB), 1997, pp. 58-60
IN-SITU MONITORING OF ELECTROCHEMICAL PROCESSES AT THE (100)P-SI AQUEOUS NH4(F) ELECTROLYTE INTERFACE BY PHOTOLUMINESCENCE/
Authors: RAPPICH J TIMOSHENKO VY DITTRICH T
Citation: J. Rappich et al., IN-SITU MONITORING OF ELECTROCHEMICAL PROCESSES AT THE (100)P-SI AQUEOUS NH4(F) ELECTROLYTE INTERFACE BY PHOTOLUMINESCENCE/, Journal of the Electrochemical Society, 144(2), 1997, pp. 493-496
CORRELATION BETWEEN SURFACE NONRADIATIVE RECOMBINATION AND CURRENT OSCILLATION AT P-SI(100) DURING ELECTROPOLISHING IN FLUORIDE SOLUTION
Authors: RAPPICH J TIMOSHENKO VY DITTRICH T
Citation: J. Rappich et al., CORRELATION BETWEEN SURFACE NONRADIATIVE RECOMBINATION AND CURRENT OSCILLATION AT P-SI(100) DURING ELECTROPOLISHING IN FLUORIDE SOLUTION, Berichte der Bunsengesellschaft fur Physikalische Chemie, 101(1), 1997, pp. 139-142
BLOCKING EFFECT OF CHARGE-TRANSFER AT THE POROUS SILICON SILICON INTERFACE/
Authors: DITTRICH T RAPPICH J TIMOSHENKO VY
Citation: T. Dittrich et al., BLOCKING EFFECT OF CHARGE-TRANSFER AT THE POROUS SILICON SILICON INTERFACE/, Applied physics letters, 70(20), 1997, pp. 2705-2707
SELECTIVE LASER-INDUCED MELTING OF ULTRATHIN NANOPOROUS SILICON LAYERS
Authors: DITTRICH T SIEBER I HENRION W RAUSCHER S WANDERKA N RAPPICH J
Citation: T. Dittrich et al., SELECTIVE LASER-INDUCED MELTING OF ULTRATHIN NANOPOROUS SILICON LAYERS, Applied physics A: Materials science & processing, 63(5), 1996, pp. 467-470
PHOTO-CONTROLLED AND POTENTIAL-CONTROLLED NANOPOROUS SILICON FORMATION ON N-SI(111) - AN IN-SITU FTIR INVESTIGATION
Authors: RAPPICH J LEWERENZ HJ
Citation: J. Rappich et Hj. Lewerenz, PHOTO-CONTROLLED AND POTENTIAL-CONTROLLED NANOPOROUS SILICON FORMATION ON N-SI(111) - AN IN-SITU FTIR INVESTIGATION, Thin solid films, 276(1-2), 1996, pp. 25-28
ELECTRONIC-PROPERTIES OF THIN AU NANOPOROUS-SI/N-SI STRUCTURES/
Authors: DITTRICH T KLIEFOTH K SIEBER I RAPPICH J RAUSCHER S TIMOSHENKO VY
Citation: T. Dittrich et al., ELECTRONIC-PROPERTIES OF THIN AU NANOPOROUS-SI/N-SI STRUCTURES/, Thin solid films, 276(1-2), 1996, pp. 183-186
PREPARATION OF THIN NANOPOROUS SILICON LAYERS ON N-SI AND P-SI
Authors: DITTRICH T SIEBER I RAUSCHER S RAPPICH J
Citation: T. Dittrich et al., PREPARATION OF THIN NANOPOROUS SILICON LAYERS ON N-SI AND P-SI, Thin solid films, 276(1-2), 1996, pp. 200-203
IN-SITU FTIR INVESTIGATION OF THE ELECTROCHEMICAL MICROSTRUCTURING OFN-SI(111)
Authors: RAPPICH J LEWERENZ HJ
Citation: J. Rappich et Hj. Lewerenz, IN-SITU FTIR INVESTIGATION OF THE ELECTROCHEMICAL MICROSTRUCTURING OFN-SI(111), Electrochimica acta, 41(5), 1996, pp. 675-680
ELECTROCHEMICAL SURFACE CONDITIONING OF N-SI(111)
Authors: RAPPICH J AGGOUR M RAUSCHER S LEWERENZ HJ JUNGBLUT H
Citation: J. Rappich et al., ELECTROCHEMICAL SURFACE CONDITIONING OF N-SI(111), Surface science, 335(1-3), 1995, pp. 160-165
IN-SITU FOURIER-TRANSFORM INFRARED INVESTIGATION ON THE ELECTROLYTIC HYDROGENATION OF N-SILICON (111)
Authors: RAPPICH J LEWERENZ HJ
Citation: J. Rappich et Hj. Lewerenz, IN-SITU FOURIER-TRANSFORM INFRARED INVESTIGATION ON THE ELECTROLYTIC HYDROGENATION OF N-SILICON (111), Journal of the Electrochemical Society, 142(4), 1995, pp. 1233-1237
ULTRATHIN LUMINESCENT NANOPOROUS SILICON ON N-SI - PH DEPENDENT PREPARATION IN AQUEOUS NH4F SOLUTIONS
Authors: DITTRICH T RAUSCHER S TIMOSHENKO VY RAPPICH J SIEBER I FLIETNER H LEWERENZ HJ
Citation: T. Dittrich et al., ULTRATHIN LUMINESCENT NANOPOROUS SILICON ON N-SI - PH DEPENDENT PREPARATION IN AQUEOUS NH4F SOLUTIONS, Applied physics letters, 67(8), 1995, pp. 1134-1136
REDUCED INTERFACE STATE DENSITY AFTER PHOTOCURRENT OSCILLATIONS AND ELECTROCHEMICAL HYDROGENATION OF N-SI(111) - A SURFACE PHOTOVOLTAGE INVESTIGATION
Authors: RAUSCHER S DITTRICH T AGGOUR M RAPPICH J FLIETNER H LEWERENZ HJ
Citation: S. Rauscher et al., REDUCED INTERFACE STATE DENSITY AFTER PHOTOCURRENT OSCILLATIONS AND ELECTROCHEMICAL HYDROGENATION OF N-SI(111) - A SURFACE PHOTOVOLTAGE INVESTIGATION, Applied physics letters, 66(22), 1995, pp. 3018-3020
ELECTROCHEMICAL SMOOTHING OF SILICON (111)
Authors: RAPPICH J JUNGBLUT H AGGOUR M LEWERENZ HJ
Citation: J. Rappich et al., ELECTROCHEMICAL SMOOTHING OF SILICON (111), Journal of the Electrochemical Society, 141(8), 1994, pp. 120000099-120000102
THE SURFACE OF SI(111) DURING ETCHING IN NAOH STUDIED BY FTIR SPECTROSCOPY IN THE ATR TECHNIQUE
Authors: RAPPICH J LEWERENZ HJ GERISCHER H
Citation: J. Rappich et al., THE SURFACE OF SI(111) DURING ETCHING IN NAOH STUDIED BY FTIR SPECTROSCOPY IN THE ATR TECHNIQUE, Journal of the Electrochemical Society, 140(12), 1993, pp. 120000187-120000189
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