Authors:
RAPPL PHO
CLOSS H
FERREIRA SO
ABRAMOF E
BOSCHETTI C
MOTISUKE P
UETA AY
BANDEIRA IN
Citation: Pho. Rappl et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY PB1-XSNXTE LAYERS WITH 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1, Journal of crystal growth, 191(3), 1998, pp. 466-471
Authors:
ABRAMOF E
FERREIRA SO
RAPPL PHO
CLOSS H
BANDEIRA IN
Citation: E. Abramof et al., ELECTRICAL-PROPERTIES OF PB1-XSNXTE LAYERS WITH 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1 GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 82(5), 1997, pp. 2405-2410
Authors:
BOSCHETTI C
RAPPL PHO
UETA AY
BANDEIRA IN
Citation: C. Boschetti et al., GROWTH OF NARROW-GAP EPILAYERS AND P-N-JUNCTIONS ON SILICON FOR INFRARED DETECTORS ARRAYS, Infrared physics, 34(3), 1993, pp. 281-287