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Results: 1-12 |
Results: 12
MICROMORPHOLOGY CHANGES OF SILICON-OXIDE ON SI(111) DURING CURRENT OSCILLATIONS - A COMPARATIVE IN-SITU AFM AND FTIR STUDY
Authors: NAST O RAUSCHER S JUNGBLUT H LEWERENZ HJ
Citation: O. Nast et al., MICROMORPHOLOGY CHANGES OF SILICON-OXIDE ON SI(111) DURING CURRENT OSCILLATIONS - A COMPARATIVE IN-SITU AFM AND FTIR STUDY, Journal of electroanalytical chemistry [1992], 442(1-2), 1998, pp. 169-174
AUTOMATIC DETECTION OF CONSERVED RNA STRUCTURE ELEMENTS IN COMPLETE RNA VIRUS GENOMES
Authors: HOFACKER IL FEKETE M FLAMM C HUYNEN MA RAUSCHER S STOLORZ PE STADLER PF
Citation: Il. Hofacker et al., AUTOMATIC DETECTION OF CONSERVED RNA STRUCTURE ELEMENTS IN COMPLETE RNA VIRUS GENOMES, Nucleic acids research, 26(16), 1998, pp. 3825-3836
SPONTANEOUS AND ENGINEERED DELETIONS IN THE 3'-NONCODING REGION OF TICK-BORNE ENCEPHALITIS-VIRUS - CONSTRUCTION OF HIGHLY ATTENUATED MUTANTS OF A FLAVIVIRUS
Authors: MANDL CW HOLZMANN H MEIXNER T RAUSCHER S STADLER PF ALLISON SL HEINZ FX
Citation: Cw. Mandl et al., SPONTANEOUS AND ENGINEERED DELETIONS IN THE 3'-NONCODING REGION OF TICK-BORNE ENCEPHALITIS-VIRUS - CONSTRUCTION OF HIGHLY ATTENUATED MUTANTS OF A FLAVIVIRUS, Journal of virology, 72(3), 1998, pp. 2132-2140
SECONDARY STRUCTURE OF THE 3'-NONCODING REGION OF FLAVIVIRUS GENOMES - COMPARATIVE-ANALYSIS OF BASE-PAIRING PROBABILITIES
Authors: RAUSCHER S FLAMM C MANDL CW HEINZ FX STADLER PF
Citation: S. Rauscher et al., SECONDARY STRUCTURE OF THE 3'-NONCODING REGION OF FLAVIVIRUS GENOMES - COMPARATIVE-ANALYSIS OF BASE-PAIRING PROBABILITIES, RNA, 3(7), 1997, pp. 779-791
SELECTIVE LASER-INDUCED MELTING OF ULTRATHIN NANOPOROUS SILICON LAYERS
Authors: DITTRICH T SIEBER I HENRION W RAUSCHER S WANDERKA N RAPPICH J
Citation: T. Dittrich et al., SELECTIVE LASER-INDUCED MELTING OF ULTRATHIN NANOPOROUS SILICON LAYERS, Applied physics A: Materials science & processing, 63(5), 1996, pp. 467-470
ELECTRONIC-PROPERTIES OF THIN AU NANOPOROUS-SI/N-SI STRUCTURES/
Authors: DITTRICH T KLIEFOTH K SIEBER I RAPPICH J RAUSCHER S TIMOSHENKO VY
Citation: T. Dittrich et al., ELECTRONIC-PROPERTIES OF THIN AU NANOPOROUS-SI/N-SI STRUCTURES/, Thin solid films, 276(1-2), 1996, pp. 183-186
PREPARATION OF THIN NANOPOROUS SILICON LAYERS ON N-SI AND P-SI
Authors: DITTRICH T SIEBER I RAUSCHER S RAPPICH J
Citation: T. Dittrich et al., PREPARATION OF THIN NANOPOROUS SILICON LAYERS ON N-SI AND P-SI, Thin solid films, 276(1-2), 1996, pp. 200-203
HYDROGENATION OF SI(113) SURFACES BY PHOTOELECTROCHEMICAL TREATMENT
Authors: JACOBI K GRUYTERS M GENG P BITZER T AGGOUR M RAUSCHER S LEWERENZ HJ
Citation: K. Jacobi et al., HYDROGENATION OF SI(113) SURFACES BY PHOTOELECTROCHEMICAL TREATMENT, Physical review. B, Condensed matter, 51(8), 1995, pp. 5437-5440
ELECTROCHEMICAL SURFACE CONDITIONING OF N-SI(111)
Authors: RAPPICH J AGGOUR M RAUSCHER S LEWERENZ HJ JUNGBLUT H
Citation: J. Rappich et al., ELECTROCHEMICAL SURFACE CONDITIONING OF N-SI(111), Surface science, 335(1-3), 1995, pp. 160-165
ELECTRONIC-PROPERTIES OF N-SI(111) DURING ELECTROCHEMICAL SURFACE TRANSFORMATION TOWARD H-TERMINATION
Authors: DITTRICH T RAUSCHER S BITZER T AGGOUR M FLIETNER H LEWERENZ HJ
Citation: T. Dittrich et al., ELECTRONIC-PROPERTIES OF N-SI(111) DURING ELECTROCHEMICAL SURFACE TRANSFORMATION TOWARD H-TERMINATION, Journal of the Electrochemical Society, 142(7), 1995, pp. 2411-2413
ULTRATHIN LUMINESCENT NANOPOROUS SILICON ON N-SI - PH DEPENDENT PREPARATION IN AQUEOUS NH4F SOLUTIONS
Authors: DITTRICH T RAUSCHER S TIMOSHENKO VY RAPPICH J SIEBER I FLIETNER H LEWERENZ HJ
Citation: T. Dittrich et al., ULTRATHIN LUMINESCENT NANOPOROUS SILICON ON N-SI - PH DEPENDENT PREPARATION IN AQUEOUS NH4F SOLUTIONS, Applied physics letters, 67(8), 1995, pp. 1134-1136
REDUCED INTERFACE STATE DENSITY AFTER PHOTOCURRENT OSCILLATIONS AND ELECTROCHEMICAL HYDROGENATION OF N-SI(111) - A SURFACE PHOTOVOLTAGE INVESTIGATION
Authors: RAUSCHER S DITTRICH T AGGOUR M RAPPICH J FLIETNER H LEWERENZ HJ
Citation: S. Rauscher et al., REDUCED INTERFACE STATE DENSITY AFTER PHOTOCURRENT OSCILLATIONS AND ELECTROCHEMICAL HYDROGENATION OF N-SI(111) - A SURFACE PHOTOVOLTAGE INVESTIGATION, Applied physics letters, 66(22), 1995, pp. 3018-3020
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