AAAAAA

   
Results: 1-19 |
Results: 19

Authors: ZHITINSKAYA MK NEMOV SA RAVICH YI
Citation: Mk. Zhitinskaya et al., EFFECT OF PHONON-SCATTERING FROM NEUTRAL AND CHARGED IMPURITY CENTERSON THE LATTICE HEAT-CONDUCTIVITY OF PBTE(TL, NA), Physics of the solid state, 40(7), 1998, pp. 1098-1100

Authors: ALEKSEEVA GT VEDERNIKOV MV GURIEVA EA KONSTANTINOV PP PROKOFEVA LV RAVICH YI
Citation: Gt. Alekseeva et al., DONOR-LIKE BEHAVIOR OF RARE-EARTH IMPURITIES IN PBTE, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 716-719

Authors: NEMOV SA RAVICH YI PROSHIN VI ABAIDULINA TG
Citation: Sa. Nemov et al., TRANSPORT PHENOMENA IN THE SOLID-SOLUTION (PB0.78SN0.22)(0.97)IN0.03TE IN THE HOPPING CONDUCTION REGION, Semiconductors, 32(3), 1998, pp. 280-283

Authors: LENOIR B SELME MO DEMOUGE A SCHERRER H IVANOV YV RAVICH YI
Citation: B. Lenoir et al., ELECTRON AND HOLE TRANSPORT IN UNDOPED BI0.96SB0.04 ALLOYS, Physical review. B, Condensed matter, 57(18), 1998, pp. 11242-11250

Authors: NEMOV SA RAVICH YI
Citation: Sa. Nemov et Yi. Ravich, THALLIUM-DOPED LEAD CHALCOGENIDES - INVESTIGATION METHODS AND PROPERTIES, Uspehi fiziceskih nauk, 168(8), 1998, pp. 817-842

Authors: LENOIR B DAUSCHER A CASSART M RAVICH YI SCHERRER H
Citation: B. Lenoir et al., EFFECT OF ANTIMONY CONTENT ON THE THERMOELECTRIC FIGURE OF MERIT OF BI1-XSBX ALLOYS, Journal of physics and chemistry of solids, 59(1), 1998, pp. 129-134

Authors: ALEKSEEVA GT GURIEVA EA KONSTANTINOV PP PROKOFEVA LV RAVICH YI
Citation: Gt. Alekseeva et al., NATURE OF HOLE LOCALIZATION CENTERS IN SODIUM-DOPED LEAD CHALCOGENIDES, Semiconductors, 31(5), 1997, pp. 446-448

Authors: NEMOV SA PROSHIN VI RAVICH YI
Citation: Sa. Nemov et al., THERMOELECTRIC-POWER AND ACTIVATION-ENERGY FOR HOPPING CONDUCTIVITY IN PB0.78SN0.22TE SOLID-SOLUTIONS WITH HIGH IN CONTENT, Semiconductors, 30(12), 1996, pp. 1128-1129

Authors: ABAIDULINA TG NEMOV SA PROSHIN VI RAVICH YI
Citation: Tg. Abaidulina et al., SEEBECK COEFFICIENT AND ELECTRON-ENERGY BAND IN (PB0.78SN0.22)(0.97)IN0.03TE SOLID-SOLUTIONS WITH ADDITIONAL DOPING IN THE RANGE OF THE HOPPING CONDUCTIVITY, Semiconductors, 30(12), 1996, pp. 1133-1134

Authors: NEMOV SA NASREDINOV FS PARFENEV RV RAVICH YI CHERNYAEV AV SHAMSHUR DV
Citation: Sa. Nemov et al., IMPURE ELECTRON-STATES OF TL AND SN ATOMS IN (PBTE)(0.9)(PBS)(0.1) SOLID-SOLUTION, Fizika tverdogo tela, 38(5), 1996, pp. 1586-1591

Authors: ALEKSEEVA GT KONSTANTINOV PP KUTASOV VA LUKYANOVA LN RAVICH YI
Citation: Gt. Alekseeva et al., NONISOVALENT ATOMIC SUBSTITUTIONS IN BISM UTH TELLURIDE CATION SUBLATTICE, Fizika tverdogo tela, 38(10), 1996, pp. 2998-3004

Authors: RAVICH YI NEMOV SA PROSHIN VI
Citation: Yi. Ravich et al., HOPPING CONDUCTION VIA HIGHLY LOCALIZED IMPURITY STATES OF INDIUM IN PB0.78SN0.22TE SOLID-SOLUTIONS, Semiconductors, 29(8), 1995, pp. 754-756

Authors: RAVICH YI IVANOV YV RAPOPORT AV
Citation: Yi. Ravich et al., THERMOGALVANOMAGNETIC EFFECTS IN BISMUTH, Semiconductors, 29(5), 1995, pp. 458-463

Authors: DEMOUGE A LENOIR B RAVICH YI SCHERRER H SCHERRER S
Citation: A. Demouge et al., ESTIMATION OF CARRIER MOBILITIES AND DENSITIES IN BI0.96SB0.04 ALLOYSFROM GALVANOMAGNETIC COEFFICIENTS, Journal of physics and chemistry of solids, 56(9), 1995, pp. 1155-1164

Authors: ABAIDULINA TG ZHITINSKAYA MK NEMOV SA RAVICH YI
Citation: Tg. Abaidulina et al., EXPERIMENTAL-STUDY OF THE INTRINSIC DEFECTS IN DOPED BISMUTH TELLURIDE BY ELECTRICAL METHODS, Semiconductors, 28(9), 1994, pp. 899-900

Authors: KAIDANOV VI NEMOV SA RAVICH YI
Citation: Vi. Kaidanov et al., SELF-COMPENSATION OF ELECTRICALLY ACTIVE IMPURITIES BY INTRINSIC DEFECTS IN IV-VI SEMICONDUCTORS, Semiconductors, 28(3), 1994, pp. 223-237

Authors: RAVICH YI NEMOV SA PROSHIN VI
Citation: Yi. Ravich et al., SELF-COMPENSATION OF A DONOR IMPURITY BY NEUTRAL COMPLEXES IN BISMUTH-DOPED LEAD-TELLURIDE, Semiconductors, 28(2), 1994, pp. 163-165

Authors: NEMOV SA RAVICH YI BEREZIN AV GASUMYANTS VE ZHITINSKAYA MK PROSHIN VI
Citation: Sa. Nemov et al., TRANSPORT PHENOMENA IN PB0.78SN0.22TE WITH HIGH IN IMPURITY CONCENTRATIONS, Semiconductors, 27(2), 1993, pp. 165-168

Authors: ZHITINSKAYA MK NEMOV SA RAVICH YI ABAIDULINA TG KOMPANEETS VV BUSHMARINA GS DRABKIN IA
Citation: Mk. Zhitinskaya et al., ELECTROPHYSICAL PROPERTIES OF INDIUM-DOPED BISMUTH TELLURIDE, Semiconductors, 27(10), 1993, pp. 952-954
Risultati: 1-19 |