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Results: 1-9 |
Results: 9

Authors: PROCOP M KLEIN A RECHENBERG I KRUGER D
Citation: M. Procop et al., AES DEPTH PROFILING OF SEMICONDUCTING MULTILAYER STRUCTURES USING AN ION-BEAM BEVELING TECHNIQUE, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 358-360

Authors: RECHENBERG I KNAUER A BUGGE F RICHTER U ERBERT G VOGEL K KLEIN A ZEIMER U WEYERS M
Citation: I. Rechenberg et al., CRYSTALLINE PERFECTION IN GAINASP GAAS LASER STRUCTURES WITH GAINP ORALGAAS CLADDING LAYERS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 368-372

Authors: PROCOP M KLEIN A RECHENBERG I KRUGER D
Citation: M. Procop et al., AES DEPTH PROFILING OF SEMICONDUCTING EPITAXIAL LAYERS WITH THICKNESSES IN THE NANOMETER RANGE USING AN ION-BEAM BEVELING TECHNIQUE, Surface and interface analysis, 25(6), 1997, pp. 458-463

Authors: KNAUER A RECHENBERG I BUGGE F GRAMLICH S OELGARDT G OSTER A WEYERS M
Citation: A. Knauer et al., INFLUENCE OF THE GROWTH TEMPERATURE AND SUBSTRATE ORIENTATION ON THE LAYER PROPERTIES OF MOVPE-GROWN (GA,IN)(AS,P) GAAS/, Journal of crystal growth, 170(1-4), 1997, pp. 281-286

Authors: BUGGE F ERBERT G PROCOP M RECHENBERG I ZEIMER U WEYERS M
Citation: F. Bugge et al., EFFECT OF GROWTH TEMPERATURE ON PERFORMANCE OF ALGAAS INGAAS/GAAS QW LASER-DIODES/, Journal of electronic materials, 25(2), 1996, pp. 309-312

Authors: HOPNER A SEITZ H RECHENBERG I BUGGE F PROCOP M SCHEERSCHMIDT K QUEISSER HJ
Citation: A. Hopner et al., TEM CHARACTERIZATION OF THE INTERFACE QUALITY OF MOVPE GROWN STRAINEDINGAAS GAAS HETEROSTRUCTURES/, Physica status solidi. a, Applied research, 150(1), 1995, pp. 427-437

Authors: RECHENBERG I BEISTER G BUGGE F ERBERT G GRAMLICH S KLEIN A MAEGE J PILATZEK M RICHTER U RUVIMOV SS TREPTOW H WEYERS M
Citation: I. Rechenberg et al., POTENTIAL SOURCES OF DEGRADATION IN INGAAS GAAS LASER-DIODES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 310-313

Authors: RUVIMOV S KLEIN A RICHTER U RECHENBERG I SCHEERSCHMIDT K HEYDENREICH J
Citation: S. Ruvimov et al., TEM STUDY OF THE RAPID DEGRADATION OF PUMP LASER-DIODES, Physica status solidi. a, Applied research, 146(1), 1994, pp. 415-424

Authors: BUGGE F BEISTER G ERBERT G GRAMLICH S RECHENBERG I TREPTOW H WEYERS M
Citation: F. Bugge et al., EFFECT OF GROWTH INTERRUPTION ON PERFORMANCE OF ALGAAS INGAAS/GAAS QUANTUM-WELL LASERS/, Journal of crystal growth, 145(1-4), 1994, pp. 907-910
Risultati: 1-9 |