Citation: M. Procop et al., AES DEPTH PROFILING OF SEMICONDUCTING MULTILAYER STRUCTURES USING AN ION-BEAM BEVELING TECHNIQUE, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 358-360
Citation: M. Procop et al., AES DEPTH PROFILING OF SEMICONDUCTING EPITAXIAL LAYERS WITH THICKNESSES IN THE NANOMETER RANGE USING AN ION-BEAM BEVELING TECHNIQUE, Surface and interface analysis, 25(6), 1997, pp. 458-463
Authors:
KNAUER A
RECHENBERG I
BUGGE F
GRAMLICH S
OELGARDT G
OSTER A
WEYERS M
Citation: A. Knauer et al., INFLUENCE OF THE GROWTH TEMPERATURE AND SUBSTRATE ORIENTATION ON THE LAYER PROPERTIES OF MOVPE-GROWN (GA,IN)(AS,P) GAAS/, Journal of crystal growth, 170(1-4), 1997, pp. 281-286
Authors:
BUGGE F
ERBERT G
PROCOP M
RECHENBERG I
ZEIMER U
WEYERS M
Citation: F. Bugge et al., EFFECT OF GROWTH TEMPERATURE ON PERFORMANCE OF ALGAAS INGAAS/GAAS QW LASER-DIODES/, Journal of electronic materials, 25(2), 1996, pp. 309-312
Authors:
HOPNER A
SEITZ H
RECHENBERG I
BUGGE F
PROCOP M
SCHEERSCHMIDT K
QUEISSER HJ
Citation: A. Hopner et al., TEM CHARACTERIZATION OF THE INTERFACE QUALITY OF MOVPE GROWN STRAINEDINGAAS GAAS HETEROSTRUCTURES/, Physica status solidi. a, Applied research, 150(1), 1995, pp. 427-437
Authors:
RECHENBERG I
BEISTER G
BUGGE F
ERBERT G
GRAMLICH S
KLEIN A
MAEGE J
PILATZEK M
RICHTER U
RUVIMOV SS
TREPTOW H
WEYERS M
Citation: I. Rechenberg et al., POTENTIAL SOURCES OF DEGRADATION IN INGAAS GAAS LASER-DIODES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 310-313
Authors:
RUVIMOV S
KLEIN A
RICHTER U
RECHENBERG I
SCHEERSCHMIDT K
HEYDENREICH J
Citation: S. Ruvimov et al., TEM STUDY OF THE RAPID DEGRADATION OF PUMP LASER-DIODES, Physica status solidi. a, Applied research, 146(1), 1994, pp. 415-424
Authors:
BUGGE F
BEISTER G
ERBERT G
GRAMLICH S
RECHENBERG I
TREPTOW H
WEYERS M
Citation: F. Bugge et al., EFFECT OF GROWTH INTERRUPTION ON PERFORMANCE OF ALGAAS INGAAS/GAAS QUANTUM-WELL LASERS/, Journal of crystal growth, 145(1-4), 1994, pp. 907-910