Authors:
DACAPITO F
MOBILIO S
REGNARD JR
CATTARUZZA E
GONELLA F
MAZZOLDI P
Citation: F. Dacapito et al., THE LOCAL ATOMIC ORDER AND THE VALENCE STATE OF CU IN CU-IMPLANTED SODA-LIME GLASSES, Journal of non-crystalline solids, 234, 1998, pp. 364-369
Authors:
REVENANTBRIZARD C
SIMON JP
REGNARD JR
MANZINI I
RODMACQ B
Citation: C. Revenantbrizard et al., STRUCTURAL EVOLUTION OF AG-CO AND AG-NI ALLOYS STUDIED BY ANOMALOUS SMALL-ANGLE X-RAY-SCATTERING, Journal of applied crystallography, 31, 1998, pp. 783-788
Authors:
DACAPITO F
CATTARUZZA E
GONELLA F
MOBILIO S
REGNARD JR
SPIZZO F
Citation: F. Dacapito et al., STRUCTURAL INVESTIGATION OF SMALL CU CLUSTERS OBTAINED BY ION-IMPLANTATION IN AMORPHOUS SILICA, Journal de physique. IV, 7(C2), 1997, pp. 1107-1109
Authors:
REVENANTBRIZARD C
REGNARD JR
MIMAULT J
PROUX O
DIENY B
MEVEL B
Citation: C. Revenantbrizard et al., NANOSTRUCTURE OF GIANT MAGNETORESISTANCE HETEROGENEOUS ALLOYS NI0.20AG0.80 AFTER ANNEALING, Journal de physique. IV, 7(C2), 1997, pp. 1111-1113
Authors:
REVENANTBRIZARD C
REGNARD JR
MIMAULT J
DUCLOS D
FAIX JJ
Citation: C. Revenantbrizard et al., TOTAL ELECTRON YIELD DETECTOR WORKING AT LOW TEMPERATURE FOR LINEAR DICHROISM STUDIES ON MONOCRYSTALLINE SAMPLES, Journal de physique. IV, 7(C2), 1997, pp. 325-326
Authors:
REGNARD JR
JUANHUIX J
BRIZARD C
DIENY B
MEVEL B
MIMAULT J
PROUX O
Citation: Jr. Regnard et al., LOW-TEMPERATURE TOTAL ELECTRON YIELD EXAFS STUDY OF COXAG1-X GRANULARALLOYS, Solid state communications, 97(5), 1996, pp. 419-423
Authors:
REVENANTBRIZARD C
REGNARD JR
SOLMI S
ARMIGLIATO A
VALMORRI S
CELLINI C
ROMANATO F
Citation: C. Revenantbrizard et al., HIGH-TEMPERATURE ANNEALINGS OF SB AND SB B HEAVILY IMPLANTED SILICON-WAFERS STUDIED BY NEAR GRAZING-INCIDENCE FLUORESCENCE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE/, Journal of applied physics, 79(12), 1996, pp. 9037-9042
Authors:
VLAIC G
NAVARRA G
REGNARD JR
WILLIAMS CE
JEROME R
Citation: G. Vlaic et al., EXAFS STUDY OF HALATO-TELECHELIC POLYMERS END-CAPPED WITH GROUP IVB METAL CARBOXYLATES AT ROOM AND LOW-TEMPERATURES, Journal de physique. II, 5(5), 1995, pp. 665-675
Citation: C. Brizard et al., POLARIZED FLUORESCENCE EXAFS STUDIES OF MONOCRYSTALLINE AU NI MULTILAYERS/, Physica. B, Condensed matter, 209(1-4), 1995, pp. 411-412
Citation: C. Brizard et al., HIGH-TEMPERATURE ANNEALINGS OF SB AND SB B HEAVILY IMPLANTED SILICON-WAFERS STUDIED BY NEAR GRAZING-INCIDENCE FLUORESCENCE EXAFS/, Physica. B, Condensed matter, 209(1-4), 1995, pp. 474-476
Authors:
ARMIGLIATO A
ROMANATO F
DRIGO A
CARNERA A
BRIZARD C
REGNARD JR
ALLAIN JL
Citation: A. Armigliato et al., ANOMALOUS LOW-TEMPERATURE DOPANT DIFFUSIVITY AND DEFECT STRUCTURE IN SB-IMPLANTED AND SB B-IMPLANTED ANNEALED SILICON SAMPLES/, Physical review. B, Condensed matter, 52(3), 1995, pp. 1859-1873
Citation: C. Brizard et al., TOTAL ELECTRON YIELD EXAFS STUDIES OF (001) AU CO MONOCRYSTALLINE MULTILAYERS/, Solid state communications, 90(3), 1994, pp. 147-149
Authors:
BRIZARD C
REGNARD JR
ALLAIN JL
BOURRET A
DUBUS M
ARMIGLIATO A
PARISINI A
Citation: C. Brizard et al., BACKSCATTERING SPECTROMETRY AND ION CHANNELING STUDIES OF HEAVILY IMPLANTED AS+ IN SILICON, Journal of applied physics, 75(1), 1994, pp. 126-133
Authors:
ALLAIN JL
BOURRET A
REGNARD JR
ARMIGLIATO A
Citation: Jl. Allain et al., LOCAL ATOMIC-STRUCTURE IN SB+ AND SB+ B+ HEAVILY IMPLANTED SILICON FROM FLUORESCENCE EXAFS/, JPN J A P 1, 32, 1993, pp. 616-618
Authors:
ALLAIN JL
REGNARD JR
BOURRET A
TOURILLON G
PIZZINI S
PARISINI A
ARMIGLIATO A
Citation: Jl. Allain et al., RELATION BETWEEN THE LOCAL-STRUCTURE AND THE DESACTIVATION OF AS+ HEAVILY IMPLANTED SILICON, JPN J A P 1, 32, 1993, pp. 625-627