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Results: 1-11 |
Results: 11
PROGRESS IN MOVPE OF HGCDTE FOR ADVANCED INFRARED DETECTORS
Authors: MITRA P CASE FC REINE MB
Citation: P. Mitra et al., PROGRESS IN MOVPE OF HGCDTE FOR ADVANCED INFRARED DETECTORS, Journal of electronic materials, 27(6), 1998, pp. 510-520
MOCVD OF BANDGAP-ENGINEERED HGCDTE P-N-N-P DUAL-BAND INFRARED DETECTOR ARRAYS
Authors: MITRA P BARNES SL CASE FC REINE MB ODETTE P STARR R HAIRSTON A KUHLER K WEILER MH MUSICANT BL
Citation: P. Mitra et al., MOCVD OF BANDGAP-ENGINEERED HGCDTE P-N-N-P DUAL-BAND INFRARED DETECTOR ARRAYS, Journal of electronic materials, 26(6), 1997, pp. 482-487
DOPING IN MOVPE OF HGCDTE - ORIENTATION EFFECTS AND GROWTH OF HIGH-PERFORMANCE IR PHOTODIODES
Authors: MITRA P CASE FC REINE MB STARR R WEILER MH
Citation: P. Mitra et al., DOPING IN MOVPE OF HGCDTE - ORIENTATION EFFECTS AND GROWTH OF HIGH-PERFORMANCE IR PHOTODIODES, Journal of crystal growth, 170(1-4), 1997, pp. 542-548
ELECTRICAL CHARACTERIZATION OF VERY-NARROW-GAP BULK HGCDTE SINGLE-CRYSTALS BY VARIABLE MAGNETIC-FIELD HALL MEASUREMENTS
Authors: KIM JS SEILER DG LANCASTER RA REINE MB
Citation: Js. Kim et al., ELECTRICAL CHARACTERIZATION OF VERY-NARROW-GAP BULK HGCDTE SINGLE-CRYSTALS BY VARIABLE MAGNETIC-FIELD HALL MEASUREMENTS, Journal of electronic materials, 25(8), 1996, pp. 1215-1220
IMPROVED ARSENIC DOPING IN METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF HGCDTE AND IN-SITU GROWTH OF HIGH-PERFORMANCE LONG-WAVELENGTH INFRAREDPHOTODIODES
Authors: MITRA P TYAN YL CASE FC STARR R REINE MB
Citation: P. Mitra et al., IMPROVED ARSENIC DOPING IN METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF HGCDTE AND IN-SITU GROWTH OF HIGH-PERFORMANCE LONG-WAVELENGTH INFRAREDPHOTODIODES, Journal of electronic materials, 25(8), 1996, pp. 1328-1335
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF HGCDTE P N JUNCTIONS USING ARSENIC AND IODINE DOPING/
Authors: MITRA P SCHIMERT TR CASE FC BARNES SL REINE MB STARR R WEILER MH KESTIGIAN M
Citation: P. Mitra et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF HGCDTE P N JUNCTIONS USING ARSENIC AND IODINE DOPING/, Journal of electronic materials, 24(9), 1995, pp. 1077-1085
EFFECT OF A VALENCE-BAND BARRIER ON THE QUANTUM EFFICIENCY AND BACKGROUND-LIMITED DYNAMIC RESISTANCE OF COMPOSITIONALLY GRADED HGCDTE P-ON-N HETEROJUNCTION PHOTODIODES
Authors: WEILER MH REINE MB
Citation: Mh. Weiler et Mb. Reine, EFFECT OF A VALENCE-BAND BARRIER ON THE QUANTUM EFFICIENCY AND BACKGROUND-LIMITED DYNAMIC RESISTANCE OF COMPOSITIONALLY GRADED HGCDTE P-ON-N HETEROJUNCTION PHOTODIODES, Journal of electronic materials, 24(9), 1995, pp. 1329-1339
METALORGANIC VAPOR-PHASE EPITAXY IN-SITU GROWTH OF P-ON-N AND N-ON-P HG1-XCDXTE JUNCTION PHOTODIODES USING TERTIARYBUTYLARSINE AS THE ACCEPTOR SOURCE
Authors: RAO V EHSANI H BHAT IB KESTIGIAN M STARR R WEILER MH REINE MB
Citation: V. Rao et al., METALORGANIC VAPOR-PHASE EPITAXY IN-SITU GROWTH OF P-ON-N AND N-ON-P HG1-XCDXTE JUNCTION PHOTODIODES USING TERTIARYBUTYLARSINE AS THE ACCEPTOR SOURCE, Journal of electronic materials, 24(5), 1995, pp. 437-443
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF HGCDTE FOR PHOTODIODE APPLICATIONS
Authors: MITRA P SCHIMERT TR CASE FC STARR R WEILER MH KESTIGIAN M REINE MB
Citation: P. Mitra et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF HGCDTE FOR PHOTODIODE APPLICATIONS, Journal of electronic materials, 24(5), 1995, pp. 661-668
INDEPENDENTLY ACCESSED BACK-TO-BACK HGCDTE PHOTODIODES - A NEW DUAL-BAND INFRARED DETECTOR
Authors: REINE MB NORTON PW STARR R WEILER MH KESTIGIAN M MUSICANT BL MITRA P SCHIMERT T CASE FC BHAT IB EHSANI H RAO V
Citation: Mb. Reine et al., INDEPENDENTLY ACCESSED BACK-TO-BACK HGCDTE PHOTODIODES - A NEW DUAL-BAND INFRARED DETECTOR, Journal of electronic materials, 24(5), 1995, pp. 669-679
THE IMPACT OF CHARACTERIZATION TECHNIQUES ON HGCDTE INFRARED DETECTORTECHNOLOGY
Authors: REINE MB MASCHHOFF KR TOBIN SP NORTON PW MROCZKOWSKI JA KRUEGER EE
Citation: Mb. Reine et al., THE IMPACT OF CHARACTERIZATION TECHNIQUES ON HGCDTE INFRARED DETECTORTECHNOLOGY, Semiconductor science and technology, 8(6), 1993, pp. 788-804
Risultati: 1-11 |