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Results: 1-18 |
Results: 18
PULSED-LASER DEPOSITION OF CRYSTALLINE SILICON-CARBIDE FILMS
Authors: REITANO R BAERI P
Citation: R. Reitano et P. Baeri, PULSED-LASER DEPOSITION OF CRYSTALLINE SILICON-CARBIDE FILMS, Europhysics letters, 43(5), 1998, pp. 565-571
RELAXATION AND CRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE PROBED BYOPTICAL MEASUREMENTS
Authors: MUSUMECI P REITANO R CALCAGNO L ROCCAFORTE F MAKHTARI A GRIMALDI MG
Citation: P. Musumeci et al., RELAXATION AND CRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE PROBED BYOPTICAL MEASUREMENTS, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(3), 1997, pp. 323-333
AMERICAN GOVERNMENT - A COMPARATIVE APPROACH
Authors: REITANO R ELFENBEIN C
Citation: R. Reitano et C. Elfenbein, AMERICAN GOVERNMENT - A COMPARATIVE APPROACH, PS, political science & politics, 30(3), 1997, pp. 540-552
ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF AMORPHOUS-SILICON PRODUCED BY KR-IMPLANTATION INTO SILICON( ION)
Authors: RAKVIN B PIVAC B REITANO R
Citation: B. Rakvin et al., ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF AMORPHOUS-SILICON PRODUCED BY KR-IMPLANTATION INTO SILICON( ION), Journal of applied physics, 81(8), 1997, pp. 3453-3456
NANOSECOND LASER-INDUCED THERMAL EVAPORATION OF SILICON-CARBIDE
Authors: REITANO R BAERI P
Citation: R. Reitano et P. Baeri, NANOSECOND LASER-INDUCED THERMAL EVAPORATION OF SILICON-CARBIDE, International journal of thermophysics, 17(5), 1996, pp. 1079-1087
EXCIMER-LASER INDUCED THERMAL EVAPORATION AND ABLATION OF SILICON-CARBIDE
Authors: REITANO R BAERI P MARINO N
Citation: R. Reitano et al., EXCIMER-LASER INDUCED THERMAL EVAPORATION AND ABLATION OF SILICON-CARBIDE, Applied surface science, 96-8, 1996, pp. 302-308
EXCIMER-LASER INDUCED THERMAL EVAPORATION AND ABLATION OF SILICON-CARBIDE
Authors: REITANO R BAERI P
Citation: R. Reitano et P. Baeri, EXCIMER-LASER INDUCED THERMAL EVAPORATION AND ABLATION OF SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 369-372
FINGERPRINT-PIXE-METHOD IN THE IDENTIFICATION OF THE QUARRIES OF SOMELAVIC MATERIAL USED AS BUILDING-STONE FROM THE SM-MADDALENA-CHURCH INBUCCHERI-SICILY
Authors: ATZORI P BAERI P DINNOCENZO A PAPPALARDO G PAPPALARDO L REITANO R
Citation: P. Atzori et al., FINGERPRINT-PIXE-METHOD IN THE IDENTIFICATION OF THE QUARRIES OF SOMELAVIC MATERIAL USED AS BUILDING-STONE FROM THE SM-MADDALENA-CHURCH INBUCCHERI-SICILY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 109, 1996, pp. 639-643
OPTICAL AND STRUCTURAL-PROPERTIES OF SEMIINSULATING POLYCRYSTALLINE SILICON THIN-FILMS
Authors: COMPAGNINI G LOMBARDO S REITANO R CAMPISANO SU
Citation: G. Compagnini et al., OPTICAL AND STRUCTURAL-PROPERTIES OF SEMIINSULATING POLYCRYSTALLINE SILICON THIN-FILMS, Journal of materials research, 10(4), 1995, pp. 885-890
SIO2 FILM DEPOSITION BY XECL LASER-ABLATION OF FUSED-SILICA
Authors: BAERI P REITANO R MARINO N
Citation: P. Baeri et al., SIO2 FILM DEPOSITION BY XECL LASER-ABLATION OF FUSED-SILICA, Applied surface science, 86(1-4), 1995, pp. 128-133
THERMODYNAMICS AND KINETICS OF SOLIDIFICATION OF SI-AS SOLUTIONS
Authors: REITANO R
Citation: R. Reitano, THERMODYNAMICS AND KINETICS OF SOLIDIFICATION OF SI-AS SOLUTIONS, Applied surface science, 86(1-4), 1995, pp. 323-328
THERMODYNAMIC AND KINETIC-STUDY OF THE ULTRAFAST SOLIDIFICATION OF SI-AS SUPERSATURATED SOLID-SOLUTIONS
Authors: REITANO R
Citation: R. Reitano, THERMODYNAMIC AND KINETIC-STUDY OF THE ULTRAFAST SOLIDIFICATION OF SI-AS SUPERSATURATED SOLID-SOLUTIONS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 178(1-2), 1994, pp. 195-198
COMPARISON BETWEEN PULSED-LASER AND ION IRRADIATION OF HYDROGENATED AMORPHOUS-CARBON FILMS
Authors: COMPAGNINI G REITANO R
Citation: G. Compagnini et R. Reitano, COMPARISON BETWEEN PULSED-LASER AND ION IRRADIATION OF HYDROGENATED AMORPHOUS-CARBON FILMS, Surface and interface analysis, 22(1-12), 1994, pp. 520-523
SOLUTE TRAPPING OF GROUP-III, IV, AND V ELEMENTS IN SILICON BY AN APERIODIC STEPWISE GROWTH-MECHANISM
Authors: REITANO R SMITH PM AZIZ MJ
Citation: R. Reitano et al., SOLUTE TRAPPING OF GROUP-III, IV, AND V ELEMENTS IN SILICON BY AN APERIODIC STEPWISE GROWTH-MECHANISM, Journal of applied physics, 76(3), 1994, pp. 1518-1529
SPECTROSCOPIC ELLIPSOMETRY STUDY OF THE RELAXATION STATE OF AMORPHOUS-SILICON
Authors: REITANO R GRIMALDI MG BAERI P BORGHESI A SASSELLA A
Citation: R. Reitano et al., SPECTROSCOPIC ELLIPSOMETRY STUDY OF THE RELAXATION STATE OF AMORPHOUS-SILICON, Thin solid films, 233(1-2), 1993, pp. 203-206
OPTICAL-CONSTANTS OF ION-IRRADIATED HYDROGENATED AMORPHOUS-CARBON FILMS
Authors: COMPAGNINI G FOTI G REITANO R MONDIO G
Citation: G. Compagnini et al., OPTICAL-CONSTANTS OF ION-IRRADIATED HYDROGENATED AMORPHOUS-CARBON FILMS, Journal of non-crystalline solids, 162(3), 1993, pp. 237-243
TRANSITION FROM RELAXED TO DERELAXED AMORPHOUS-SILICON - OPTICAL CHARACTERIZATION
Authors: REITANO R GRIMALDI MG BAERI P BELLANDI E BORGHESI S BARATTA G
Citation: R. Reitano et al., TRANSITION FROM RELAXED TO DERELAXED AMORPHOUS-SILICON - OPTICAL CHARACTERIZATION, Journal of applied physics, 74(4), 1993, pp. 2850-2855
TIME-RESOLVED TEMPERATURE-MEASUREMENTS DURING RAPID SOLIDIFICATION OFSI-AS ALLOYS INDUCED BY PULSED-LASER MELTING
Authors: KITTL JA REITANO R AZIZ MJ BRUNCO DP THOMPSON MO
Citation: Ja. Kittl et al., TIME-RESOLVED TEMPERATURE-MEASUREMENTS DURING RAPID SOLIDIFICATION OFSI-AS ALLOYS INDUCED BY PULSED-LASER MELTING, Journal of applied physics, 73(8), 1993, pp. 3725-3733
Risultati: 1-18 |