AAAAAA

   
Results: 1-25 | 26-50 | 51-75 | 76-100 | >>
Results: 1-25/170
A MICROMECHANICAL STUDY OF HIGH-TEMPERATURE TI-AL POWDER COMPACTION
Authors: REN F CHANDRA A TVERGAARD V
Citation: F. Ren et al., A MICROMECHANICAL STUDY OF HIGH-TEMPERATURE TI-AL POWDER COMPACTION, Journal of manufacturing science and engineering, 120(2), 1998, pp. 349-358
DEPLETION MODE GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH GA2O3(GD2O3) AS THE GATE OXIDE
Authors: HONG M REN F KUO JM HOBSON WS KWO J MANNAERTS JP LOTHIAN JR CHEN YK
Citation: M. Hong et al., DEPLETION MODE GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH GA2O3(GD2O3) AS THE GATE OXIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1398-1400
GA2O3(GD2O3) INGAAS ENHANCEMENT-MODE N-CHANNEL MOSFETS/
Authors: REN F KUO JM HONG M HOBSON WS LOTHIAN JR LIN J TSAI HS MANNAERTS JP KWO J CHU SNG CHEN YK CHO AY
Citation: F. Ren et al., GA2O3(GD2O3) INGAAS ENHANCEMENT-MODE N-CHANNEL MOSFETS/, IEEE electron device letters, 19(8), 1998, pp. 309-311
INDUCTIVELY-COUPLED PLASMA-ETCHING OF BULK 6H-SIC AND THIN-FILM SICN IN NF3 CHEMISTRIES
Authors: WANG JJ LAMBERS ES PEARTON SJ OSTLING M ZETTERLING CM GROW JM REN F SHUL RJ
Citation: Jj. Wang et al., INDUCTIVELY-COUPLED PLASMA-ETCHING OF BULK 6H-SIC AND THIN-FILM SICN IN NF3 CHEMISTRIES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2204-2209
EVALUATION OF ENCAPSULATION AND PASSIVATION OF INGAAS INP DHBT DEVICES FOR LONG-TERM RELIABILITY/
Authors: KOPF RF HAMM RA RYAN RW BURM J TATE A CHEN YK GEORGIOU G LANG DV REN F
Citation: Rf. Kopf et al., EVALUATION OF ENCAPSULATION AND PASSIVATION OF INGAAS INP DHBT DEVICES FOR LONG-TERM RELIABILITY/, Journal of electronic materials, 27(8), 1998, pp. 954-960
IMPROVED SIDEWALL MORPHOLOGY ON DRY-ETCHED SIO2 MASKED GAN FEATURES
Authors: REN F PEARTON SJ SHUL RJ HAN J
Citation: F. Ren et al., IMPROVED SIDEWALL MORPHOLOGY ON DRY-ETCHED SIO2 MASKED GAN FEATURES, Journal of electronic materials, 27(4), 1998, pp. 175-178
THERMOCHEMICAL PROPERTIES OF RARE-EARTH CHLORIDE WITH DL-ALANINE
Authors: WANG XW WANG ZJ LIU JR REN F GAO SL
Citation: Xw. Wang et al., THERMOCHEMICAL PROPERTIES OF RARE-EARTH CHLORIDE WITH DL-ALANINE, Thermochimica acta, 311(1-2), 1998, pp. 29-35
DEVICE DEGRADATION DURING LOW-TEMPERATURE ECR-CVD - PART I - GAAS-MESFETS
Authors: LEE JW MACKENZIE KD JOHNSON D SHUL RJ PEARTON SJ ABERNATHY CR REN F
Citation: Jw. Lee et al., DEVICE DEGRADATION DURING LOW-TEMPERATURE ECR-CVD - PART I - GAAS-MESFETS, Solid-state electronics, 42(6), 1998, pp. 1015-1020
DEVICE DEGRADATION DURING LOW-TEMPERATURE ECR-CVD - PART II - GAAS ALGAAS HBTS/
Authors: LEE JW MACKENZIE KD JOHNSON D SHUL RJ PEARTON SJ ABERNATHY CR REN F
Citation: Jw. Lee et al., DEVICE DEGRADATION DURING LOW-TEMPERATURE ECR-CVD - PART II - GAAS ALGAAS HBTS/, Solid-state electronics, 42(6), 1998, pp. 1021-1025
DEVICE DEGRADATION DURING LOW-TEMPERATURE ECR-CVD - PART III - GAAS INGAP HEMTS/
Authors: LEE JW MACKENZIE KD JOHNSON D SHUL RJ PEARTON SJ ABERNATHY CR REN F
Citation: Jw. Lee et al., DEVICE DEGRADATION DURING LOW-TEMPERATURE ECR-CVD - PART III - GAAS INGAP HEMTS/, Solid-state electronics, 42(6), 1998, pp. 1027-1030
LOW-TEMPERATURE ECR-CVD OF SINX FOR III-V DEVICE PASSIVATION
Authors: LEE JW MACKENZIE K JOHNSON D SHUL RJ PEARTON SJ REN F
Citation: Jw. Lee et al., LOW-TEMPERATURE ECR-CVD OF SINX FOR III-V DEVICE PASSIVATION, Solid-state electronics, 42(6), 1998, pp. 1031-1034
SCHOTTKY-BARRIER HEIGHTS OF IN-0.5(ALXGA1-X)(0.5)P (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1) LATTICE-MATCHED TO GAAS
Authors: WANG YC KUO JM REN F LOTHIAN JR MAYO WE
Citation: Yc. Wang et al., SCHOTTKY-BARRIER HEIGHTS OF IN-0.5(ALXGA1-X)(0.5)P (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1) LATTICE-MATCHED TO GAAS, Solid-state electronics, 42(6), 1998, pp. 1045-1048
INDUCTIVELY-COUPLED PLASMA-ETCHING OF III-V SEMICONDUCTORS IN CL-2-BASED CHEMISTRIES
Authors: LEE JW LAMBERS ES ABERNATHY CR PEARTON SJ SHUL RJ REN F HOBSON WS CONSTANTINE C
Citation: Jw. Lee et al., INDUCTIVELY-COUPLED PLASMA-ETCHING OF III-V SEMICONDUCTORS IN CL-2-BASED CHEMISTRIES, Solid-state electronics, 42(5), 1998, pp. 65-73
COMPARISON OF DRY ETCH DAMAGE IN GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS EXPOSED TO ECR AND ICP AR PLASMAS/
Authors: LEE JW ABERNATHY CR PEARTON SJ REN F CONSTANTINE C BARRATT C SHUL RJ
Citation: Jw. Lee et al., COMPARISON OF DRY ETCH DAMAGE IN GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS EXPOSED TO ECR AND ICP AR PLASMAS/, Solid-state electronics, 42(5), 1998, pp. 733-742
HIGH-RATE ETCHING OF SIC AND SICN IN NF3 INDUCTIVELY-COUPLED PLASMAS
Authors: WANG JJ LAMBERS ES PEARTON SJ OSTLING M ZETTERLING CM GROW JM REN F
Citation: Jj. Wang et al., HIGH-RATE ETCHING OF SIC AND SICN IN NF3 INDUCTIVELY-COUPLED PLASMAS, Solid-state electronics, 42(5), 1998, pp. 743-747
EFFECT OF HIGH-DENSITY H-2 PLASMAS ON INGAP GAAS AND ALGAAS/GAAS HEMTS/
Authors: REN F KOPF RF KUO JM LOTHIAN JR LEE JW PEARTON SJ SHUL RJ CONSTANTINE C JOHNSON D
Citation: F. Ren et al., EFFECT OF HIGH-DENSITY H-2 PLASMAS ON INGAP GAAS AND ALGAAS/GAAS HEMTS/, Solid-state electronics, 42(5), 1998, pp. 749-753
DRY AND WET ETCHING OF SCALMGO4
Authors: BRANDLE CD REN F LEE JW PEARTON SJ
Citation: Cd. Brandle et al., DRY AND WET ETCHING OF SCALMGO4, Solid-state electronics, 42(3), 1998, pp. 467-469
EFFECT OF DEPOSITION CONDITION ON WET AND DRY ETCH RATES OF DEVICE-QUALITY INDUCTIVELY-COUPLED PLASMA-CHEMICALLY VAPOR-DEPOSITED SINX
Authors: HAHN YB LEE JW MACKENZIE KD JOHNSON D PEARTON SJ REN F
Citation: Yb. Hahn et al., EFFECT OF DEPOSITION CONDITION ON WET AND DRY ETCH RATES OF DEVICE-QUALITY INDUCTIVELY-COUPLED PLASMA-CHEMICALLY VAPOR-DEPOSITED SINX, Solid-state electronics, 42(11), 1998, pp. 2017-2021
THERMAL-STABILITY OF OHMIC CONTACTS TO INN
Authors: DONOVAN SM MACKENZIE JD ABERNATHY CR PEARTON SJ REN F JONES K COLE M
Citation: Sm. Donovan et al., THERMAL-STABILITY OF OHMIC CONTACTS TO INN, Solid-state electronics, 42(10), 1998, pp. 1831-1833
AN IN-0.5(AL0.3GA0.7)(0.5)P IN0.2GA0.8AS POWER HEMT WITH 65.2-PERCENTPOWER-ADDED EFFICIENCY UNDER 1.2V OPERATION/
Authors: WANG YC KUO JM LOTHIAN JR REN F TSAI HS WEINER JS LIN J TATE A CHEN YK MAYO WE
Citation: Yc. Wang et al., AN IN-0.5(AL0.3GA0.7)(0.5)P IN0.2GA0.8AS POWER HEMT WITH 65.2-PERCENTPOWER-ADDED EFFICIENCY UNDER 1.2V OPERATION/, Electronics Letters, 34(6), 1998, pp. 594-595
COPPER DRY-ETCHING WITH CL-2 AR PLASMA CHEMISTRY/
Authors: LEE JW PARK YD CHILDRESS JR PEARTON SJ SHARIFI F REN F
Citation: Jw. Lee et al., COPPER DRY-ETCHING WITH CL-2 AR PLASMA CHEMISTRY/, Journal of the Electrochemical Society, 145(7), 1998, pp. 2585-2589
HIGH-DENSITY PLASMA DAMAGE IN INGAP GAAS AND ALGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors: LEE JW PEARTON SJ REN F KOPF RF KUO JM SHUL RJ CONSTANTINE C JOHNSON D
Citation: Jw. Lee et al., HIGH-DENSITY PLASMA DAMAGE IN INGAP GAAS AND ALGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of the Electrochemical Society, 145(11), 1998, pp. 4036-4039
THERMAL-STABILITY OF W AND WSIX CONTACTS ON P-GAN
Authors: CAO XA PEARTON SJ REN F LOTHIAN JR
Citation: Xa. Cao et al., THERMAL-STABILITY OF W AND WSIX CONTACTS ON P-GAN, Applied physics letters, 73(7), 1998, pp. 942-944
DRY ETCH DAMAGE IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS EXPOSED TO INDUCTIVELY-COUPLED PLASMA AND ELECTRON-CYCLOTRON-RESONANCEAR PLASMAS
Authors: REN F LEE JW ABERNATHY CR PEARTON SJ CONSTANTINE C BARRATT C SHUL RJ
Citation: F. Ren et al., DRY ETCH DAMAGE IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS EXPOSED TO INDUCTIVELY-COUPLED PLASMA AND ELECTRON-CYCLOTRON-RESONANCEAR PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 983-989
SINGLE-HETEROJUNCTION AND DOUBLE-HETEROJUNCTION PSEUDOMORPHIC IN-0.5(AL0.3GA0.7)(0.5)P IN0.2GA0.8 AS HIGH-ELECTRON-MOBILITY TRANSISTORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/
Authors: WANG YC KUO JM REN F LOTHIAN JR WEINER JS LIN J MAYO WE CHEN YK
Citation: Yc. Wang et al., SINGLE-HETEROJUNCTION AND DOUBLE-HETEROJUNCTION PSEUDOMORPHIC IN-0.5(AL0.3GA0.7)(0.5)P IN0.2GA0.8 AS HIGH-ELECTRON-MOBILITY TRANSISTORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, IEEE electron device letters, 18(11), 1997, pp. 550-552
Risultati: 1-25 | 26-50 | 51-75 | 76-100 | >>