AAAAAA

   
Results: 1-11 |
Results: 11
THERMALLY STIMULATED CURRENT SPECTROSCOPY ON SILICON PLANAR-DOPED GAAS SAMPLES
Authors: RUBINGER RM BEZERRA JC CHAGAS EF GONZALEZ JC RODRIGUES WN RIBEIRO GM MOREIRA MVB DEOLIVEIRA AG
Citation: Rm. Rubinger et al., THERMALLY STIMULATED CURRENT SPECTROSCOPY ON SILICON PLANAR-DOPED GAAS SAMPLES, Journal of applied physics, 84(7), 1998, pp. 3764-3769
SIZE QUANTIZATION AND ZERO-DIMENSIONAL EFFECTS IN SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS
Authors: PETROFF PM SCHMIDT KH RIBEIRO GM LORKE A KOTTHAUS J
Citation: Pm. Petroff et al., SIZE QUANTIZATION AND ZERO-DIMENSIONAL EFFECTS IN SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS, JPN J A P 1, 36(6B), 1997, pp. 4068-4072
ELECTRICAL-TRANSPORT PROPERTIES OF SILICON DELTA-DOPED AL0.30GA0.70ASSAMPLES SHOWING SUPPRESSION OF THE DX CENTER FEATURES
Authors: CORREA JA DEOLIVEIRA AG DASILVA MIN RIBEIRO GM SAMPAIO JF
Citation: Ja. Correa et al., ELECTRICAL-TRANSPORT PROPERTIES OF SILICON DELTA-DOPED AL0.30GA0.70ASSAMPLES SHOWING SUPPRESSION OF THE DX CENTER FEATURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 870-875
KNOWLEDGE ENGINEERING TOOL FOR TRAINING POWER-SUBSTATION OPERATORS
Authors: LAMBERTTORRES G RIBEIRO GM COSTA CIA DASILVA APA QUINTANA VH
Citation: G. Lamberttorres et al., KNOWLEDGE ENGINEERING TOOL FOR TRAINING POWER-SUBSTATION OPERATORS, IEEE transactions on power delivery, 12(2), 1997, pp. 694-699
THE EL2-LIKE METASTABLE DEFECT AND THE N-TYPE TO P-TYPE TRANSITION INSILICON PLANAR-DOPED GAAS
Authors: DASILVA MIN DEOLIVEIRA AG RIBEIRO GM RUBINGER RM CORREA JA MOREIRA MVB
Citation: Min. Dasilva et al., THE EL2-LIKE METASTABLE DEFECT AND THE N-TYPE TO P-TYPE TRANSITION INSILICON PLANAR-DOPED GAAS, Journal of applied physics, 82(7), 1997, pp. 3346-3350
TEMPERATURE-DEPENDENCE OF THE EQUILIBRIUM HALL CONCENTRATION IN SILICON PLANAR-DOPED GAAS SAMPLES
Authors: CORREA JA DEOLIVEIRA AG DASILVA MIN MOREIRA MVB RIBEIRO GM CHACHAM H
Citation: Ja. Correa et al., TEMPERATURE-DEPENDENCE OF THE EQUILIBRIUM HALL CONCENTRATION IN SILICON PLANAR-DOPED GAAS SAMPLES, Solid state communications, 98(12), 1996, pp. 1063-1068
PHASE-TRANSITION STRUCTURAL-CHANGES OF RB2CD2(SO4)(3) INVESTIGATED BYELECTRON-PARAMAGNETIC-RESONANCE OF THE TL2+ ION
Authors: FRANCO CJ CHAVES AS RIBEIRO GM GAZZINELLI R
Citation: Cj. Franco et al., PHASE-TRANSITION STRUCTURAL-CHANGES OF RB2CD2(SO4)(3) INVESTIGATED BYELECTRON-PARAMAGNETIC-RESONANCE OF THE TL2+ ION, Journal of the Physical Society of Japan, 65(4), 1996, pp. 1087-1092
DX-CENTER ENERGY-LEVEL DEPENDENCE ON SILICON DOPING CONCENTRATION IN AL0.3GA0.7AS
Authors: MEDEIROSRIBEIRO G DEOLIVEIRA AG RIBEIRO GM SOARES DAW
Citation: G. Medeirosribeiro et al., DX-CENTER ENERGY-LEVEL DEPENDENCE ON SILICON DOPING CONCENTRATION IN AL0.3GA0.7AS, Journal of electronic materials, 24(7), 1995, pp. 907-912
PHOTOCONDUCTIVITY AND N-TYPE TO P-TYPE TRANSITION IN SILICON PLANAR-DOPED GAAS STRUCTURES WITH A DOPED CAP LAYER
Authors: DEOLIVEIRA AG RIBEIRO GM SOARES DAW CORREA JA DASILVA MIN CHACHAM H
Citation: Ag. Deoliveira et al., PHOTOCONDUCTIVITY AND N-TYPE TO P-TYPE TRANSITION IN SILICON PLANAR-DOPED GAAS STRUCTURES WITH A DOPED CAP LAYER, Journal of applied physics, 78(4), 1995, pp. 2659-2665
COMPETITION BETWEEN NEGATIVE AND POSITIVE PHOTOCONDUCTIVITY IN SILICON PLANAR-DOPED GAAS
Authors: DEOLIVEIRA AG RIBEIRO GM SOARES DAW CHACHAM H
Citation: Ag. Deoliveira et al., COMPETITION BETWEEN NEGATIVE AND POSITIVE PHOTOCONDUCTIVITY IN SILICON PLANAR-DOPED GAAS, Applied physics letters, 64(17), 1994, pp. 2258-2260
PREVALENCE OF HELICOBACTER-PYLORI IN BRAZILIAN PATIENTS WITH GASTRIC-CARCINOMA
Authors: NOGUEIRA AMMF RIBEIRO GM RODRIGUES MAG QUEIROZ DMM MENDES EN ROCHA GA BARBOSA AJA
Citation: Ammf. Nogueira et al., PREVALENCE OF HELICOBACTER-PYLORI IN BRAZILIAN PATIENTS WITH GASTRIC-CARCINOMA, American journal of clinical pathology, 100(3), 1993, pp. 236-239
Risultati: 1-11 |