Authors: RAYNAUD C RICHIER C GUILLOT G

Citation: C. Raynaud et al., TEMPERATURE-DEPENDENCE OF ELECTRICAL-PROPERTIES OF 6H-SIC BURIED GATEJFET, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1504-1507

Authors: RICHIER C MAENE N MABBOUX G BELLENS R

Citation: C. Richier et al., COMPARISON OF DIFFERENT ON-CHIP ESD PROTECTION STRUCTURES IN A 0.35 MU-M CMOS TECHNOLOGY, Microelectronics and reliability, 37(10-11), 1997, pp. 1537-1540

Authors: NIKOLAIDIS T RICHIER C REFFAY M MORTINI P PANANAKAKIS G

Citation: T. Nikolaidis et al., INFLUENCE OF PARASITIC STRUCTURES ON THE ESD PERFORMANCE OF A PURE BIPOLAR PROCESS, Microelectronics and reliability, 36(11-12), 1996, pp. 1723-1726

Authors: RAYNAUD C RICHIER C BROUNKOV PN DUCROQUET F GUILLOT G PORTER LM DAVIS RF JAUSSAUD C BILLON T

Citation: C. Raynaud et al., DETERMINATION OF DONOR AND ACCEPTOR LEVEL ENERGIES BY ADMITTANCE SPECTROSCOPY IN 6H SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 122-125