AAAAAA

   
Results: 1-25 | 26-35
Results: 1-25/35
IMPLANTATION-INDUCED STRUCTURAL AND SURFACE MODIFICATION OF SILICA
Authors: JOHNSON CM THOMPSON TD RIDGWAY MC GURARIE V
Citation: Cm. Johnson et al., IMPLANTATION-INDUCED STRUCTURAL AND SURFACE MODIFICATION OF SILICA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 629-633
THERMAL ANNEALING OF WAVE-GUIDES FORMED BY ION-IMPLANTATION OF SILICA-ON-SI
Authors: JOHNSON CM RIDGWAY MC KURVER A LEECH PW SIMPSON PJ
Citation: Cm. Johnson et al., THERMAL ANNEALING OF WAVE-GUIDES FORMED BY ION-IMPLANTATION OF SILICA-ON-SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 670-674
A DLTS AND RBS ANALYSIS OF THE ANGULAR-DEPENDENCE OF DEFECTS INTRODUCED IN SI DURING ION-BEAM CHANNELING USING 435 KEV ALPHA-PARTICLES
Authors: DEENAPANRAY PNK RIDGWAY MC AURET FD FRIEDLAND E
Citation: Pnk. Deenapanray et al., A DLTS AND RBS ANALYSIS OF THE ANGULAR-DEPENDENCE OF DEFECTS INTRODUCED IN SI DURING ION-BEAM CHANNELING USING 435 KEV ALPHA-PARTICLES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1322-1326
DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF 1 KEV HE, NE, AND AR ION-BOMBARDED, EPITAXIALLY GROWN N-SI
Authors: DEENAPANRAY PNK AURET FD RIDGWAY MC GOODMAN SA MYBURG G MALHERBE JB
Citation: Pnk. Deenapanray et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF 1 KEV HE, NE, AND AR ION-BOMBARDED, EPITAXIALLY GROWN N-SI, Journal of applied physics, 84(5), 1998, pp. 2565-2570
CHARACTERIZATION OF THE LOCAL-STRUCTURE OF AMORPHOUS GAAS PRODUCED BYION-IMPLANTATION
Authors: RIDGWAY MC GLOVER CJ FORAN GJ YU KM
Citation: Mc. Ridgway et al., CHARACTERIZATION OF THE LOCAL-STRUCTURE OF AMORPHOUS GAAS PRODUCED BYION-IMPLANTATION, Journal of applied physics, 83(9), 1998, pp. 4610-4614
ZINC AND PHOSPHORUS COIMPLANTATION IN INDIUM-PHOSPHIDE
Authors: YU KM RIDGWAY MC
Citation: Km. Yu et Mc. Ridgway, ZINC AND PHOSPHORUS COIMPLANTATION IN INDIUM-PHOSPHIDE, Applied physics letters, 73(1), 1998, pp. 52-54
CHANNEL WAVE-GUIDES FORMED BY ION-IMPLANTATION OF PECVD GROWN SILICA
Authors: LEECH PW FAITH MF JOHNSON CM RIDGWAY MC BAZYLENKO M
Citation: Pw. Leech et al., CHANNEL WAVE-GUIDES FORMED BY ION-IMPLANTATION OF PECVD GROWN SILICA, IEE proceedings. Optoelectronics, 144(2), 1997, pp. 97-100
THE PRODUCTION AND STABILITY OF IMPLANTATION-INDUCED VACANCY EXCESSESIN SILICON
Authors: ELLINGBOE SL RIDGWAY MC
Citation: Sl. Ellingboe et Mc. Ridgway, THE PRODUCTION AND STABILITY OF IMPLANTATION-INDUCED VACANCY EXCESSESIN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 90-93
SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHISED GAAS IN THE PRESENCE OF IMPLANTATION-INDUCED MICROSCOPIC NONSTOICHIOMETRY
Authors: RIDGWAY MC BELAY KB LLEWELLYN DJ CLAVERIE A
Citation: Mc. Ridgway et al., SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHISED GAAS IN THE PRESENCE OF IMPLANTATION-INDUCED MICROSCOPIC NONSTOICHIOMETRY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 423-427
COMPENSATION IMPLANTS IN 6H-SIC
Authors: EDWARDS A DWIGHT DN RAO MV RIDGWAY MC KELNER G PAPANICOLAOU N
Citation: A. Edwards et al., COMPENSATION IMPLANTS IN 6H-SIC, Journal of applied physics, 82(9), 1997, pp. 4223-4227
DIRECT OBSERVATION OF THE AMPHOTERIC BEHAVIOR OF GE IN INP MODIFIED BY P-COIMPLANTATION
Authors: YU KM RIDGWAY MC
Citation: Km. Yu et Mc. Ridgway, DIRECT OBSERVATION OF THE AMPHOTERIC BEHAVIOR OF GE IN INP MODIFIED BY P-COIMPLANTATION, Applied physics letters, 71(7), 1997, pp. 939-941
SOLID-PHASE EPITAXIAL-GROWTH OF ALXGA1-XAS ALLOYS AS A FUNCTION OF ALCONTENT
Authors: HOGG SM LLEWELLYN DJ TAN HH RIDGWAY MC
Citation: Sm. Hogg et al., SOLID-PHASE EPITAXIAL-GROWTH OF ALXGA1-XAS ALLOYS AS A FUNCTION OF ALCONTENT, Applied physics letters, 71(10), 1997, pp. 1397-1399
MIXING AND CORROSION IN NI IMPLANTED WITH PT THROUGH A SACRIFICIAL LAYER OF ALUMINA
Authors: DUFFY AG CLAPHAM L RIDGWAY MC WHITTON JL
Citation: Ag. Duffy et al., MIXING AND CORROSION IN NI IMPLANTED WITH PT THROUGH A SACRIFICIAL LAYER OF ALUMINA, Surface & coatings technology, 83(1-3), 1996, pp. 189-193
ELECTRICAL INACTIVATION IN PB-IMPLANTED INP
Authors: RIDGWAY MC KRINGHOJ P JOHNSON CM
Citation: Mc. Ridgway et al., ELECTRICAL INACTIVATION IN PB-IMPLANTED INP, Journal of applied physics, 79(10), 1996, pp. 7545-7548
CHANNEL WAVE-GUIDES FORMED BY ION-IMPLANTATION OF 20 MOL-PERCENT GE-DOPED SILICA
Authors: LEECH PW FAITH M RIDGWAY MC LEISTIKO O
Citation: Pw. Leech et al., CHANNEL WAVE-GUIDES FORMED BY ION-IMPLANTATION OF 20 MOL-PERCENT GE-DOPED SILICA, Electronics Letters, 32(11), 1996, pp. 1000-1002
THERMAL ANNEALING OF IMPLANTATION-INDUCED COMPACTION FOR IMPROVED SILICA WAVE-GUIDE PERFORMANCE
Authors: JOHNSON CM RIDGWAY MC LEECH PW
Citation: Cm. Johnson et al., THERMAL ANNEALING OF IMPLANTATION-INDUCED COMPACTION FOR IMPROVED SILICA WAVE-GUIDE PERFORMANCE, Applied physics letters, 69(7), 1996, pp. 984-986
SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHIZED GAAS - THE INFLUENCE OF MACROSCOPIC NONSTOICHIOMETRY
Authors: BELAY KB LLEWELLYN DJ RIDGWAY MC
Citation: Kb. Belay et al., SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHIZED GAAS - THE INFLUENCE OF MACROSCOPIC NONSTOICHIOMETRY, Applied physics letters, 69(17), 1996, pp. 2534-2536
SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHIZED GAAS - THE INFLUENCE OF MICROSCOPIC NONSTOICHIOMETRY
Authors: BELAY KB LLEWELLYN DJ RIDGWAY MC
Citation: Kb. Belay et al., SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHIZED GAAS - THE INFLUENCE OF MICROSCOPIC NONSTOICHIOMETRY, Applied physics letters, 69(15), 1996, pp. 2255-2257
STRAIN REDUCTION IN THE SI OVERLAYER FOR IMPROVED SIMOX MATERIAL
Authors: ELLINGBOE SL RIDGWAY MC
Citation: Sl. Ellingboe et Mc. Ridgway, STRAIN REDUCTION IN THE SI OVERLAYER FOR IMPROVED SIMOX MATERIAL, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 29-33
ION-IMPLANTATION OF GROUP-IV OR GROUP-VI ELEMENTS FOR N-TYPE DOPING OF INP
Authors: RIDGWAY MC KRINGHOJ P JOHNSON CM
Citation: Mc. Ridgway et al., ION-IMPLANTATION OF GROUP-IV OR GROUP-VI ELEMENTS FOR N-TYPE DOPING OF INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 311-314
HIGH-ENERGY ION-IMPLANTATION FOR ELECTRICAL ISOLATION OF INP-BASED MATERIALS AND DEVICES
Authors: RIDGWAY MC ELLIMAN RG FAITH ME KEMENY PC DAVIES M
Citation: Mc. Ridgway et al., HIGH-ENERGY ION-IMPLANTATION FOR ELECTRICAL ISOLATION OF INP-BASED MATERIALS AND DEVICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 323-326
IMPLANTATION-INDUCED DEFECTS IN HIGH-DOSE O-IMPLANTED SI
Authors: ELLINGBOE SL RIDGWAY MC
Citation: Sl. Ellingboe et Mc. Ridgway, IMPLANTATION-INDUCED DEFECTS IN HIGH-DOSE O-IMPLANTED SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 409-414
CHANNEL WAVE-GUIDES FORMED BY GERMANIUM IMPLANTATION IN FUSED-SILICA
Authors: LEECH PW FAITH M KEMENY PC RIDGWAY MC ELLIMAN RG REEVES GK ZHOU W
Citation: Pw. Leech et al., CHANNEL WAVE-GUIDES FORMED BY GERMANIUM IMPLANTATION IN FUSED-SILICA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 442-446
HIGH-DOSE IMPLANTATION OF PT IONS INTO NI USING THE SACRIFICIAL LAYERTECHNIQUE - A COMPARISON OF AL AND AL2O3 SACRIFICIAL LAYERS
Authors: DUFFY AG CLAPHAM L WHITTON JL RIDGWAY MC
Citation: Ag. Duffy et al., HIGH-DOSE IMPLANTATION OF PT IONS INTO NI USING THE SACRIFICIAL LAYERTECHNIQUE - A COMPARISON OF AL AND AL2O3 SACRIFICIAL LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 504-510
RAPID THERMAL ANNEALING OF SN-IMPLANTED INP
Authors: RIDGWAY MC KRINGHOJ P
Citation: Mc. Ridgway et P. Kringhoj, RAPID THERMAL ANNEALING OF SN-IMPLANTED INP, Journal of applied physics, 77(6), 1995, pp. 2375-2379
Risultati: 1-25 | 26-35