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Results: 1-12 |
Results: 12
A PHENOMENON-BASED APPROACH TO UPSLOPE CONTRIBUTING AREA AND DEPRESSIONS IN DEMS
Authors: RIEGER W
Citation: W. Rieger, A PHENOMENON-BASED APPROACH TO UPSLOPE CONTRIBUTING AREA AND DEPRESSIONS IN DEMS, Hydrological processes, 12(6), 1998, pp. 857-872
A BOUNDARY-ELEMENT FORMULATION USING HIGHER-ORDER CURVILINEAR EDGE ELEMENTS
Authors: HUBER CJ RIEGER W HAAS M RUCKER WM
Citation: Cj. Huber et al., A BOUNDARY-ELEMENT FORMULATION USING HIGHER-ORDER CURVILINEAR EDGE ELEMENTS, IEEE transactions on magnetics, 34(5), 1998, pp. 2441-2444
HYDROGEN IN GALLIUM NITRIDE GROWN BY MOCVD
Authors: AMBACHER O ANGERER H DIMITROV R RIEGER W STUTZMANN M DOLLINGER G BERGMAIER A
Citation: O. Ambacher et al., HYDROGEN IN GALLIUM NITRIDE GROWN BY MOCVD, Physica status solidi. a, Applied research, 159(1), 1997, pp. 105-119
GROWTH OF GAN ALN AND ALGAN BY MOCVD USING TRIETHYLGALLIUM AND TRITERTIARYBUTYLALUMINIUM/
Authors: AMBACHER O DIMITROV R LENTZ D METZGER T RIEGER W STUTZMANN M
Citation: O. Ambacher et al., GROWTH OF GAN ALN AND ALGAN BY MOCVD USING TRIETHYLGALLIUM AND TRITERTIARYBUTYLALUMINIUM/, Journal of crystal growth, 170(1-4), 1997, pp. 335-339
THE FIRST MONOMERIC, VOLATILE BIS-AZIDE SINGLE-SOURCE PRECURSOR TO GALLIUM NITRIDE THIN-FILMS
Authors: MIEHR A AMBACHER O RIEGER W METZGER T BORN E FISCHER RA
Citation: A. Miehr et al., THE FIRST MONOMERIC, VOLATILE BIS-AZIDE SINGLE-SOURCE PRECURSOR TO GALLIUM NITRIDE THIN-FILMS, CHEMICAL VAPOR DEPOSITION, 2(2), 1996, pp. 51-55
DEFECT-RELATED OPTICAL-TRANSITIONS IN GAN
Authors: RIEGER W DIMITROV R BRUNNER D ROHRER E AMBACHER O STUTZMANN M
Citation: W. Rieger et al., DEFECT-RELATED OPTICAL-TRANSITIONS IN GAN, Physical review. B, Condensed matter, 54(24), 1996, pp. 17596-17602
SUB-BANDGAP ABSORPTION OF GALLIUM NITRIDE DETERMINED BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
Authors: AMBACHER O RIEGER W ANSMANN P ANGERER H MOUSTAKAS TD STUTZMANN M
Citation: O. Ambacher et al., SUB-BANDGAP ABSORPTION OF GALLIUM NITRIDE DETERMINED BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY, Solid state communications, 97(5), 1996, pp. 365-370
GROWTH OF GAN ALN BY LOW-PRESSURE MOCVD USING TRIETHYLGALLIUM AND TRITERTBUTYLALUMINIUM/
Authors: AMBACHER O DIMITROV R LENTZ D METZGER T RIEGER W STUTZMANN M
Citation: O. Ambacher et al., GROWTH OF GAN ALN BY LOW-PRESSURE MOCVD USING TRIETHYLGALLIUM AND TRITERTBUTYLALUMINIUM/, Journal of crystal growth, 167(1-2), 1996, pp. 1-7
INFLUENCE OF SUBSTRATE-INDUCED BIAXIAL COMPRESSIVE STRESS ON THE OPTICAL-PROPERTIES OF THIN GAN FILMS
Authors: RIEGER W METZGER T ANGERER H DIMITROV R AMBACHER O STUTZMANN M
Citation: W. Rieger et al., INFLUENCE OF SUBSTRATE-INDUCED BIAXIAL COMPRESSIVE STRESS ON THE OPTICAL-PROPERTIES OF THIN GAN FILMS, Applied physics letters, 68(7), 1996, pp. 970-972
A SIMPLE-MODEL TO SHOW BONY INTERFERENCES AFTER THE SAGITTAL SPLIT OSTEOTOMY
Authors: JENSEN J RIEGER W SINDETPEDERSEN S ERIK S
Citation: J. Jensen et al., A SIMPLE-MODEL TO SHOW BONY INTERFERENCES AFTER THE SAGITTAL SPLIT OSTEOTOMY, Journal of oral and maxillofacial surgery, 52(12), 1994, pp. 1337-1340
MECHANISM OF CLUSTER FORMATION IN A CLEAN SILANE DISCHARGE
Authors: VEPREK S SCHOPPER K AMBACHER O RIEGER W VEPREKHEIJMAN MGJ
Citation: S. Veprek et al., MECHANISM OF CLUSTER FORMATION IN A CLEAN SILANE DISCHARGE, Journal of the Electrochemical Society, 140(7), 1993, pp. 1935-1942
TERMINAL SYSTEM AS AN INTEGRATED APPROACH TO DIE-CASTING
Authors: RIEGER W
Citation: W. Rieger, TERMINAL SYSTEM AS AN INTEGRATED APPROACH TO DIE-CASTING, Metall, 45(10), 1991, pp. 1011-1013
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