Authors:
DICKMANN J
RIEPE K
GEYER A
MAILE BE
SCHURR A
BERG M
DAEMBKES H
Citation: J. Dickmann et al., IN(0.52)A(0.48)AS INXGA1-XAS (0.53-LESS-THAN-X-LESS-THAN-1.0) PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES- DESIGN AND PERFORMANCES/, JPN J A P 1, 35(1A), 1996, pp. 10-15
Authors:
RIEPE K
LEIER H
SEILER U
MARTEN A
SLEDZIK H
Citation: K. Riepe et al., HIGH-EFFICIENCY GAINP GAAS HBT MMIC POWER-AMPLIFIER WITH UP TO 9 W OUTPUT POWER AT 10 GHZ/, IEEE microwave and guided wave letters, 6(1), 1996, pp. 22-24
Authors:
DICKMANN J
SCHILDBERG S
RIEPE K
MAILE BE
SCHURR A
GEYER A
NAROZNY P
Citation: J. Dickmann et al., BREAKDOWN MECHANISMS IN PSEUDOMORPHIC INALAS INXGA1-XAS HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP .2. ON-STATE/, JPN J A P 1, 34(4A), 1995, pp. 1805-1808
Authors:
DICKMANN J
SCHILDBERG S
RIEPE K
MAILE BE
SCHURR A
GEYER A
NAROZNY P
Citation: J. Dickmann et al., BREAKDOWN MECHANISMS IN PSEUDOMORPHIC INALAS INXGA1-X HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP .1. OFF-STATE/, JPN J A P 1, 34(1), 1995, pp. 66-71