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Results: 6

Authors: DICKMANN J RIEPE K GEYER A MAILE BE SCHURR A BERG M DAEMBKES H
Citation: J. Dickmann et al., IN(0.52)A(0.48)AS INXGA1-XAS (0.53-LESS-THAN-X-LESS-THAN-1.0) PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES- DESIGN AND PERFORMANCES/, JPN J A P 1, 35(1A), 1996, pp. 10-15

Authors: RIEPE K LEIER H SEILER U MARTEN A SLEDZIK H
Citation: K. Riepe et al., HIGH-EFFICIENCY GAINP GAAS HBT MMIC POWER-AMPLIFIER WITH UP TO 9 W OUTPUT POWER AT 10 GHZ/, IEEE microwave and guided wave letters, 6(1), 1996, pp. 22-24

Authors: DICKMANN J SCHILDBERG S RIEPE K MAILE BE SCHURR A GEYER A NAROZNY P
Citation: J. Dickmann et al., BREAKDOWN MECHANISMS IN PSEUDOMORPHIC INALAS INXGA1-XAS HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP .2. ON-STATE/, JPN J A P 1, 34(4A), 1995, pp. 1805-1808

Authors: DICKMANN J SCHILDBERG S RIEPE K MAILE BE SCHURR A GEYER A NAROZNY P
Citation: J. Dickmann et al., BREAKDOWN MECHANISMS IN PSEUDOMORPHIC INALAS INXGA1-X HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP .1. OFF-STATE/, JPN J A P 1, 34(1), 1995, pp. 66-71

Authors: RIEPE K LEIER H MARTEN A GUTTICH U DIEUDONNE JM BACHEM KH
Citation: K. Riepe et al., 35-40 GHZ MONOLITHIC VCOS UTILIZING HIGH-SPEED GAINP GAAS HBTS/, IEEE microwave and guided wave letters, 4(8), 1994, pp. 274-276

Authors: DICKMANN J KOSSLOWSKI S MAILE BE HASPEKLO H HEUTHE S GEYER A RIEPE K SCHURR A DAEMBKES H KUNZEL H BOTTCHER J
Citation: J. Dickmann et al., HIGH-GAIN 28 GHZ COPLANAR WAVE-GUIDE MONOLITHIC AMPLIFIER ON INP SUBSTRATE, Electronics Letters, 29(5), 1993, pp. 493-495
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