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Results: 1-13 |
Results: 13
PRELIMINARY EMPIRICAL RESULTS SUGGESTING THE MAPPING OF DYNAMIC IN-SITU PROCESS SIGNALS TO REAL-TIME WAFER ATTRIBUTES IN A PLASMA ETCH PROCESS
Authors: RIETMAN EA IBBOTSON DE LEE JTC
Citation: Ea. Rietman et al., PRELIMINARY EMPIRICAL RESULTS SUGGESTING THE MAPPING OF DYNAMIC IN-SITU PROCESS SIGNALS TO REAL-TIME WAFER ATTRIBUTES IN A PLASMA ETCH PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 131-136
A STUDY ON FAILURE PREDICTION IN A PLASMA REACTOR
Authors: RIETMAN EA BEACHY M
Citation: Ea. Rietman et M. Beachy, A STUDY ON FAILURE PREDICTION IN A PLASMA REACTOR, IEEE transactions on semiconductor manufacturing, 11(4), 1998, pp. 670-680
DYNAMIC IMAGES OF PLASMA PROCESSES - USE OF FOURIER BLOBS FOR END-POINT DETECTION DURING PLASMA-ETCHING OF PATTERNED WAFERS
Authors: RIETMAN EA LEE JTC LAYADI N
Citation: Ea. Rietman et al., DYNAMIC IMAGES OF PLASMA PROCESSES - USE OF FOURIER BLOBS FOR END-POINT DETECTION DURING PLASMA-ETCHING OF PATTERNED WAFERS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1449-1453
A NEW ALGORITHM FOR REAL-TIME THIN-FILM THICKNESS ESTIMATION GIVEN IN-SITU MULTIWAVELENGTH ELLIPSOMETRY USING AN EXTENDED KALMAN FILTER
Authors: GALARZA CG KHARGONEKAR PP LAYADI N VINCENT TL RIETMAN EA LEE JTC
Citation: Cg. Galarza et al., A NEW ALGORITHM FOR REAL-TIME THIN-FILM THICKNESS ESTIMATION GIVEN IN-SITU MULTIWAVELENGTH ELLIPSOMETRY USING AN EXTENDED KALMAN FILTER, Thin solid films, 313, 1998, pp. 156-160
PREPRODUCTION RESULTS DEMONSTRATING MULTIPLE-SYSTEM MODELS FOR YIELD ANALYSIS
Authors: RIETMAN EA FRIEDMAN DJ LORY ER
Citation: Ea. Rietman et al., PREPRODUCTION RESULTS DEMONSTRATING MULTIPLE-SYSTEM MODELS FOR YIELD ANALYSIS, IEEE transactions on semiconductor manufacturing, 10(4), 1997, pp. 469-481
NEURAL NETWORKS IN PLASMA PROCESSING
Authors: RIETMAN EA
Citation: Ea. Rietman, NEURAL NETWORKS IN PLASMA PROCESSING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 504-510
A GENETIC ALGORITHM FOR LOW VARIANCE CONTROL IN SEMICONDUCTOR-DEVICE MANUFACTURING - SOME EARLY RESULTS
Authors: RIETMAN EA FRYE RC
Citation: Ea. Rietman et Rc. Frye, A GENETIC ALGORITHM FOR LOW VARIANCE CONTROL IN SEMICONDUCTOR-DEVICE MANUFACTURING - SOME EARLY RESULTS, IEEE transactions on semiconductor manufacturing, 9(2), 1996, pp. 223-229
A NEURAL-NETWORK MODEL OF A CONTACT PLASMA ETCH PROCESS FOR VLSI PRODUCTION
Authors: RIETMAN EA
Citation: Ea. Rietman, A NEURAL-NETWORK MODEL OF A CONTACT PLASMA ETCH PROCESS FOR VLSI PRODUCTION, IEEE transactions on semiconductor manufacturing, 9(1), 1996, pp. 95-100
MODELING AND CONTROL OF A SEMICONDUCTOR MANUFACTURING PROCESS WITH ANAUTOMATA NETWORK - AN EXAMPLE IN PLASMA ETCH PROCESSING
Authors: RIETMAN EA PATEL SH LORY ER
Citation: Ea. Rietman et al., MODELING AND CONTROL OF A SEMICONDUCTOR MANUFACTURING PROCESS WITH ANAUTOMATA NETWORK - AN EXAMPLE IN PLASMA ETCH PROCESSING, Computers & operations research, 23(6), 1996, pp. 573-585
PLASMA-ETCHING ENDPOINTING BY MONITORING RADIOFREQUENCY POWER-SYSTEMSWITH AN ARTIFICIAL NEURAL-NETWORK
Authors: MAYNARD HL RIETMAN EA LEE JTC IBBOTSON DE
Citation: Hl. Maynard et al., PLASMA-ETCHING ENDPOINTING BY MONITORING RADIOFREQUENCY POWER-SYSTEMSWITH AN ARTIFICIAL NEURAL-NETWORK, Journal of the Electrochemical Society, 143(6), 1996, pp. 2029-2035
A PRODUCTION DEMONSTRATION OF WAFER-TO-WAFER PLASMA GATE ETCH CONTROLBY ADAPTIVE REAL-TIME COMPUTATION OF THE OVER-ETCH TIME FROM IN-SITU PROCESS SIGNALS
Authors: RIETMAN EA PATEL SH
Citation: Ea. Rietman et Sh. Patel, A PRODUCTION DEMONSTRATION OF WAFER-TO-WAFER PLASMA GATE ETCH CONTROLBY ADAPTIVE REAL-TIME COMPUTATION OF THE OVER-ETCH TIME FROM IN-SITU PROCESS SIGNALS, IEEE transactions on semiconductor manufacturing, 8(3), 1995, pp. 304-308
ACTIVE NEUTRAL NETWORK CONTROL OF WAFER ATTRIBUTES IN A PLASMA ETCH PROCESS
Authors: RIETMAN EA FRYE RC LORY ER HARRY TR
Citation: Ea. Rietman et al., ACTIVE NEUTRAL NETWORK CONTROL OF WAFER ATTRIBUTES IN A PLASMA ETCH PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1314-1316
USE OF NEURAL NETWORKS IN MODELING SEMICONDUCTOR MANUFACTURING PROCESSES - AN EXAMPLE FOR PLASMA ETCH MODELING
Authors: RIETMAN EA LORY ER
Citation: Ea. Rietman et Er. Lory, USE OF NEURAL NETWORKS IN MODELING SEMICONDUCTOR MANUFACTURING PROCESSES - AN EXAMPLE FOR PLASMA ETCH MODELING, IEEE transactions on semiconductor manufacturing, 6(4), 1993, pp. 343-347
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