Authors: FLEETWOOD DM WINOKUR PS RIEWE LC REBER RA

Citation: Dm. Fleetwood et al., BULK OXIDE TRAPS AND BORDER TRAPS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 84(11), 1998, pp. 6141-6148

Authors: FLEETWOOD DM RIEWE LC SCHWANK JR WITCZAK SC SCHRIMPF RD

Citation: Dm. Fleetwood et al., RADIATION EFFECTS AT LOW ELECTRIC-FIELDS IN THERMAL, SIMOX, AND BIPOLAR-BASE OXIDES, IEEE transactions on nuclear science, 43(6), 1996, pp. 2537-2546

Authors: FLEETWOOD DM WARREN WL SCHWANK JR WINOKUR PS SHANEYFELT MR RIEWE LC

Citation: Dm. Fleetwood et al., EFFECTS OF INTERFACE TRAPS AND BORDER TRAPS ON MOS POSTIRRADIATION ANNEALING RESPONSE, IEEE transactions on nuclear science, 42(6), 1995, pp. 1698-1707

Authors: FLEETWOOD DM WINOKUR PS REBER RA MEISENHEIMER TL SCHWANK JR SHANEYFELT MR RIEWE LC

Citation: Dm. Fleetwood et al., EFFECTS OF OXIDE TRAPS, INTERFACE TRAPS, AND BORDER TRAPS ON METAL-OXIDE-SEMICONDUCTOR DEVICES, Journal of applied physics, 73(10), 1993, pp. 5058-5074

Authors: FLEETWOOD DM SHANEYFELT MR RIEWE LC WINOKUR PS REBER RA

Citation: Dm. Fleetwood et al., THE ROLE OF BORDER TRAPS IN MOS HIGH-TEMPERATURE POSTIRRADIATION ANNEALING RESPONSE, IEEE transactions on nuclear science, 40(6), 1993, pp. 1323-1334