Authors: KUZNETSOV AN LEBEDEV AA RASTEGAEVA MG ROGACHEV NA TERUKOV EI SHCHEGLOV MP

Citation: An. Kuznetsov et al., HETEROEPITAXIAL GROWTH OF SIC FILMS ON ALN AL2O3 SUBSTRATES/, Semiconductors, 29(8), 1995, pp. 740-742

Authors: ROGACHEV NA KUZNETSOV AN TRAPEZNIKOVA IN TERUKOV EI CHELNOKOV VE

Citation: Na. Rogachev et al., AMORPHOUS HYDROGENATED SILICON-CARBIDE PRODUCED BY MAGNETRON REACTIVESPUTTERING, Semiconductors, 28(8), 1994, pp. 776-778

Authors: ROGACHEV NA KUZNETSOV AN TERUKOV EI LEBEDEV AA CHELNOKOV VE

Citation: Na. Rogachev et al., CHARACTERISTICS OF THE GROWTH OF SILICON- CARBIDE EPITAXIAL LAYERS FROM GAS-PHASE PRODUCED BY MAGNETOTRON REACTIVE SPUTTERING, Pis'ma v Zurnal tehniceskoj fiziki, 20(7), 1994, pp. 51-54

Authors: VASILEV VA ISHKALOV Z KUMEKOV ME ROGACHEV NA TERUKOV EI

Citation: Va. Vasilev et al., OPTICAL SHOCK IONIZATION IN A-SI1-XGEX-H FILMS, Pis'ma v Zurnal tehniceskoj fiziki, 20(1), 1994, pp. 89-93