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Results: 1-16 |
Results: 16

Authors: PIOTROWSKI J ROGALSKI A
Citation: J. Piotrowski et A. Rogalski, NEW-GENERATION OF INFRARED PHOTODETECTORS, Sensors and actuators. A, Physical, 67(1-3), 1998, pp. 146-152

Authors: ROGALSKI A
Citation: A. Rogalski, COMPARISON OF THE PERFORMANCE OF QUANTUM-WELL AND CONVENTIONAL BULK INFRARED PHOTODETECTORS, Infrared physics & technology, 38(5), 1997, pp. 295-310

Authors: ROGALSKI A CIUPA R LARKOWSKI W
Citation: A. Rogalski et al., ROOM-TEMPERATURE INASSB PHOTODIODES - THEORETICAL PREDICTIONS AND EXPERIMENTAL-DATA, Solid-state electronics, 39(11), 1996, pp. 1593-1600

Authors: ROGALSKI A CIUPA R
Citation: A. Rogalski et R. Ciupa, THEORETICAL MODELING OF LONG-WAVELENGTH N(-ON-P HGCDTE PHOTODIODES()), Journal of applied physics, 80(4), 1996, pp. 2483-2489

Authors: PIOTROWSKI J ROGALSKI A
Citation: J. Piotrowski et A. Rogalski, COMMENT ON TEMPERATURE LIMITS ON INFRARED DETECTIVITIES OF INAS INXGA1-XSB SUPERLATTICES AND BULK HG1-XCDXTE [J-APPL-PHYS 74, 4774 (1993)]/, Journal of applied physics, 80(4), 1996, pp. 2542-2544

Authors: RAZEGHI M ROGALSKI A
Citation: M. Razeghi et A. Rogalski, SEMICONDUCTOR ULTRAVIOLET DETECTORS, Journal of applied physics, 79(10), 1996, pp. 7433-7473

Authors: ROGALSKI A CIUPA R ZOGG H
Citation: A. Rogalski et al., COMPUTER MODELING OF CARRIER TRANSPORT IN PBSNSE PHOTODIODES (VOL 35,PG 837, 1994), Infrared physics & technology, 36(4), 1995, pp. 821-821

Authors: ROGALSKI A CIUPA R
Citation: A. Rogalski et R. Ciupa, LONG-WAVELENGTH HGCDTE PHOTODIODES - N(-ON-P VERSUS P-ON-N STRUCTURES() ), Journal of applied physics, 77(7), 1995, pp. 3505-3512

Authors: KUNG P ZHANG X WALKER D SAXLER A PIOTROWSKI J ROGALSKI A RAZEGHI M
Citation: P. Kung et al., KINETICS OF PHOTOCONDUCTIVITY IN N-TYPE GAN PHOTODETECTOR, Applied physics letters, 67(25), 1995, pp. 3792-3794

Authors: ZHANG X KUNG P WALKER D PIOTROWSKI J ROGALSKI A SAXLER A RAZEGHI M
Citation: X. Zhang et al., PHOTOVOLTAIC EFFECTS IN GAN STRUCTURES WITH P-N-JUNCTIONS, Applied physics letters, 67(14), 1995, pp. 2028-2030

Authors: ROGALSKI A CIUPA R ZOGG H
Citation: A. Rogalski et al., COMPUTER MODELING OF CARRIER TRANSPORT IN PBSNSE PHOTODIODES, Infrared physics & technology, 35(7), 1994, pp. 837-845

Authors: ROGALSKI A
Citation: A. Rogalski, NEW TRENDS IN INFRARED DETECTOR TECHNOLOGY, Infrared physics & technology, 35(1), 1994, pp. 1-21

Authors: ROGALSKI A
Citation: A. Rogalski, SEMICONDUCTOR INFRARED DETECTORS, Optical engineering, 33(5), 1994, pp. 1392-1394

Authors: ROGALSKI A
Citation: A. Rogalski, NEW TRENDS IN SEMICONDUCTOR INFRARED DETECTORS, Optical engineering, 33(5), 1994, pp. 1395-1412

Authors: CIUPA R ROGALSKI A RUTKOWSKI J PIOTROWSKI J
Citation: R. Ciupa et al., THERMOELECTRICALLY COOLED ARSENIC DIFFUSED MEDIUM-WAVELENGTH INFRAREDHGCDTE PHOTODIODES, Optical engineering, 33(5), 1994, pp. 1434-1439

Authors: ROGALSKI A JOZWIKOWSKI K
Citation: A. Rogalski et K. Jozwikowski, GAAS ALGAAS QUANTUM-WELL INFRARED PHOTOCONDUCTORS VERSUS HGCDTE PHOTODIODES FOR LONG-WAVELENGTH INFRARED APPLICATIONS/, Optical engineering, 33(5), 1994, pp. 1477-1484
Risultati: 1-16 |