Citation: A. Rogalski, COMPARISON OF THE PERFORMANCE OF QUANTUM-WELL AND CONVENTIONAL BULK INFRARED PHOTODETECTORS, Infrared physics & technology, 38(5), 1997, pp. 295-310
Citation: A. Rogalski et al., ROOM-TEMPERATURE INASSB PHOTODIODES - THEORETICAL PREDICTIONS AND EXPERIMENTAL-DATA, Solid-state electronics, 39(11), 1996, pp. 1593-1600
Citation: A. Rogalski et R. Ciupa, THEORETICAL MODELING OF LONG-WAVELENGTH N(-ON-P HGCDTE PHOTODIODES()), Journal of applied physics, 80(4), 1996, pp. 2483-2489
Citation: J. Piotrowski et A. Rogalski, COMMENT ON TEMPERATURE LIMITS ON INFRARED DETECTIVITIES OF INAS INXGA1-XSB SUPERLATTICES AND BULK HG1-XCDXTE [J-APPL-PHYS 74, 4774 (1993)]/, Journal of applied physics, 80(4), 1996, pp. 2542-2544
Citation: A. Rogalski et al., COMPUTER MODELING OF CARRIER TRANSPORT IN PBSNSE PHOTODIODES (VOL 35,PG 837, 1994), Infrared physics & technology, 36(4), 1995, pp. 821-821
Citation: A. Rogalski et R. Ciupa, LONG-WAVELENGTH HGCDTE PHOTODIODES - N(-ON-P VERSUS P-ON-N STRUCTURES() ), Journal of applied physics, 77(7), 1995, pp. 3505-3512
Citation: A. Rogalski et K. Jozwikowski, GAAS ALGAAS QUANTUM-WELL INFRARED PHOTOCONDUCTORS VERSUS HGCDTE PHOTODIODES FOR LONG-WAVELENGTH INFRARED APPLICATIONS/, Optical engineering, 33(5), 1994, pp. 1477-1484