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Results: 1-10 |
Results: 10
STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN GAN MULTIPLE-QUANTUM WELLS/
Authors: WU XH ELSASS CR ABARE A MACK M KELLER S PETROFF PM DENBAARS SP SPECK JS ROSNER SJ
Citation: Xh. Wu et al., STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN GAN MULTIPLE-QUANTUM WELLS/, Applied physics letters, 72(6), 1998, pp. 692-694
GROWTH OF VERTICAL-CAVITY SURFACE-EMITTING LASER MATERIAL ON (311)B GAAS BY MBE
Authors: MARS DE ROSNER SJ KANEKO Y NAKAGAWA S TAKEUCHI T YAMADA N
Citation: De. Mars et al., GROWTH OF VERTICAL-CAVITY SURFACE-EMITTING LASER MATERIAL ON (311)B GAAS BY MBE, Journal of crystal growth, 175, 1997, pp. 365-371
ELECTRICAL-CONDUCTION THROUGH COMPOUND SEMICONDUCTOR WAFER BONDED INTERFACES
Authors: VANDERWATER DA KISH FA PEANSKY MJ ROSNER SJ
Citation: Da. Vanderwater et al., ELECTRICAL-CONDUCTION THROUGH COMPOUND SEMICONDUCTOR WAFER BONDED INTERFACES, Journal of crystal growth, 174(1-4), 1997, pp. 213-219
DEPOSITION OF 3-DIMENSIONAL GE ISLANDS ON SI(001) BY CHEMICAL-VAPOR-DEPOSITION AT ATMOSPHERIC AND REDUCED PRESSURES
Authors: KAMINS TI CARR EC WILLIAMS RS ROSNER SJ
Citation: Ti. Kamins et al., DEPOSITION OF 3-DIMENSIONAL GE ISLANDS ON SI(001) BY CHEMICAL-VAPOR-DEPOSITION AT ATMOSPHERIC AND REDUCED PRESSURES, Journal of applied physics, 81(1), 1997, pp. 211-219
CORRELATION OF CATHODOLUMINESCENCE INHOMOGENEITY WITH MICROSTRUCTURALDEFECTS IN EPITAXIAL GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: ROSNER SJ CARR EC LUDOWISE MJ GIROLAMI G ERIKSON HI
Citation: Sj. Rosner et al., CORRELATION OF CATHODOLUMINESCENCE INHOMOGENEITY WITH MICROSTRUCTURALDEFECTS IN EPITAXIAL GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 70(4), 1997, pp. 420-422
THERMAL-STABILITY OF MOAU AND TIPTAU NONALLOYED INGAAS CONTACTS
Authors: WAKITA AS MOLL N ROSNER SJ FISCHERCOLBRIE A
Citation: As. Wakita et al., THERMAL-STABILITY OF MOAU AND TIPTAU NONALLOYED INGAAS CONTACTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2092-2099
GAAS TO INP WAFER FUSION
Authors: RAM RJ DUDLEY JJ BOWERS JE YANG L CAREY K ROSNER SJ NAUKA K
Citation: Rj. Ram et al., GAAS TO INP WAFER FUSION, Journal of applied physics, 78(6), 1995, pp. 4227-4237
LOW-RESISTANCE OHMIC CONDUCTION ACROSS COMPOUND SEMICONDUCTOR WAFER-BENDED INTERFACES
Authors: KISH FA VANDERWATER DA PEANASKY MJ LUDOWISE MJ HUMMEL SG ROSNER SJ
Citation: Fa. Kish et al., LOW-RESISTANCE OHMIC CONDUCTION ACROSS COMPOUND SEMICONDUCTOR WAFER-BENDED INTERFACES, Applied physics letters, 67(14), 1995, pp. 2060-2062
DOUBLE-DIFFUSED GRADED SIGE-BASE BIPOLAR-TRANSISTORS
Authors: VOOK D KAMINS TI BURTON G VANDEVOORDE PJ WANG HH COEN R LIN J PETTENGILL DF YU PK ROSNER SJ TURNER JE LADERMAN SS FU HS WANG AS
Citation: D. Vook et al., DOUBLE-DIFFUSED GRADED SIGE-BASE BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 1013-1018
PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY YIELDS BAND-GAP OF GA0.5IN0.5P CONTAINING RELATIVELY ORDERED DOMAINS
Authors: FOUQUET JE MINSKY MS ROSNER SJ
Citation: Je. Fouquet et al., PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY YIELDS BAND-GAP OF GA0.5IN0.5P CONTAINING RELATIVELY ORDERED DOMAINS, Applied physics letters, 63(23), 1993, pp. 3212-3214
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