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A MODEL FOR THE CONCENTRATION PROFILE OF PXOY IN THE INTERWAFER GAS-PHASE ON PHOSPHORUS DOPING OF SILICON USING A SOLID PLANAR DIFFUSION SOURCE (VOL 2, PG 1143, 1994)
Authors: PEEV G ROUSEVA M
Citation: G. Peev et M. Rouseva, A MODEL FOR THE CONCENTRATION PROFILE OF PXOY IN THE INTERWAFER GAS-PHASE ON PHOSPHORUS DOPING OF SILICON USING A SOLID PLANAR DIFFUSION SOURCE (VOL 2, PG 1143, 1994), Modelling and simulation in materials science and engineering, 3(4), 1995, pp. 583-583
A MODEL FOR THE CONCENTRATION PROFILE OF PXOY IN THE INTERWAFER GAS-PHASE ON PHOSPHORUS DOPING OF SILICON USING A SOLID PLANAR DIFFUSION SOURCE
Authors: PEEV G ROUSEVA M
Citation: G. Peev et M. Rouseva, A MODEL FOR THE CONCENTRATION PROFILE OF PXOY IN THE INTERWAFER GAS-PHASE ON PHOSPHORUS DOPING OF SILICON USING A SOLID PLANAR DIFFUSION SOURCE, Modelling and simulation in materials science and engineering, 2(6), 1994, pp. 1143-1152
ON THE MECHANISM OF P(X)O(Y) EMISSION FROM A SILICON PYROPHOSPHATE-CONTAINING SOLID PLANAR DIFFUSION SOURCE
Authors: PEEV G ROUSEVA M ZAMBOV L
Citation: G. Peev et al., ON THE MECHANISM OF P(X)O(Y) EMISSION FROM A SILICON PYROPHOSPHATE-CONTAINING SOLID PLANAR DIFFUSION SOURCE, Semiconductor science and technology, 9(2), 1994, pp. 137-139
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