AAAAAA

   
Results: 1-3 |
Results: 3

Authors: ROSSLER JM ROYTER Y MULL DE GOODHUE WD FONSTAD CG
Citation: Jm. Rossler et al., BROMINE ION-BEAM-ASSISTED ETCHING OF INP AND GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1012-1017

Authors: AHADIAN JF VAIDYANATHAN PT PATTERSON SG ROYTER Y MULL D PETRICH GS GOODHUE WD PRASAD S KOLODZIEJSKI LA FONSTAD CG
Citation: Jf. Ahadian et al., PRACTICAL OEICS BASED ON THE MONOLITHIC INTEGRATION OF GAAS-INGAP LEDS WITH COMMERCIAL GAAS VLSI ELECTRONICS, IEEE journal of quantum electronics, 34(7), 1998, pp. 1117-1123

Authors: WANG H LUO JF SHENOY KV ROYTER Y FONSTAD CG PSALTIS D
Citation: H. Wang et al., MONOLITHIC INTEGRATION OF SEEDS AND VLSI GAAS CIRCUITS BY EPITAXY ON ELECTRONICS, IEEE photonics technology letters, 9(5), 1997, pp. 607-609
Risultati: 1-3 |