Authors:
RUMBERG J
REINHARDT F
RICHTER W
FARRELL T
ARMSTRONG J
Citation: J. Rumberg et al., MONOLAYER RESOLVED MONITORING OF ALAS GROWTH WITH METALORGANIC MOLECULAR-BEAM EPITAXY BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 88-91
Authors:
WOOLF DA
ROSE KC
RUMBERG J
WESTWOOD DI
REINHARDT F
MORRIS SJ
RICHTER W
WILLIAMS RH
Citation: Da. Woolf et al., REFLECTANCE ANISOTROPY SPECTROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OF SUBMONOLAYER COVERAGES OF SI GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY, Physical review. B, Condensed matter, 51(7), 1995, pp. 4691-4694
Authors:
RUMBERG J
ZETTLER JT
STAHRENBERG K
PLOSKA K
RICHTER W
DAWERITZ L
SCHUTZENDUBE P
WASSERMEIER M
Citation: J. Rumberg et al., SURFACE PROCESSES RESPONSIBLE FOR REFLECTANCE-ANISOTROPY OSCILLATIONSDURING MOLECULAR-BEAM EPITAXY GROWTH OF GAAS(001), Surface science, 337(1-2), 1995, pp. 103-108
Authors:
ZETTLER JT
RUMBERG J
PLOSKA K
STAHRENBERG K
PRISTOVSEK M
RICHTER W
WASSERMEIER M
SCHUTZENDUBE P
BEHREND J
DAWERITZ L
Citation: Jt. Zettler et al., REFLECTANCE ANISOTROPY OSCILLATIONS DURING MOCVD AND MBE GROWTH OF GAAS(001), Physica status solidi. a, Applied research, 152(1), 1995, pp. 35-47
Authors:
BORG A
HUNDERI O
RICHTER W
RUMBERG J
VENVIK HJ
Citation: A. Borg et al., THE OPTICAL ANISOTROPY OF PT(100) STUDIED BY REFLECTION ANISOTROPY SPECTROSCOPY, Physica status solidi. a, Applied research, 152(1), 1995, pp. 77-84
Authors:
WOOLF DA
ROSE KC
MORRIS SJ
WESTWOOD DI
RUMBERG J
REINHARDT F
RICHTER W
WILLIAMS RH
Citation: Da. Woolf et al., THE CHARACTERIZATION OF THE GROWTH OF SUBMONOLAYER COVERAGES (1 200-TO-1 MONOLAYER) OF SI AND BE ON GAAS(001) - A REFLECTANCE ANISOTROPY SPECTROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY/, Journal of crystal growth, 150(1-4), 1995, pp. 197-201
Authors:
REINHARDT F
JONSSON J
ZORN M
RICHTER W
PLOSKA K
RUMBERG J
KURPAS P
Citation: F. Reinhardt et al., MONOLAYER GROWTH OSCILLATIONS AND SURFACE-STRUCTURE OF GAAS(001) DURING METALORGANIC VAPOR-PHASE EPITAXY GROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2541-2546
Authors:
ESSER N
HUNGER R
RUMBERG J
RICHTER W
DELSOLE R
SHKREBTII AI
Citation: N. Esser et al., REFLECTANCE ANISOTROPY SPECTROSCOPY OF ORDERED SB OVERLAYERS ON GAAS(110) AND INP(110), Surface science, 309, 1994, pp. 1045-1050
Authors:
JONSSON J
REINHARDT F
ZORN M
PLOSKA K
RICHTER W
RUMBERG J
Citation: J. Jonsson et al., IN-SITU TIME-RESOLVED MONITORING OF PH3 INDUCED EXCHANGE-REACTIONS ONGAAS UNDER METALORGANIC VAPOR-PHASE EPITAXY CONDITIONS, Applied physics letters, 64(15), 1994, pp. 1998-2000