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Results: 1-10 |
Results: 10
A COMPARISON OF THE KINETICS AND THE EVOLUTION OF MICROSTRUCTURE OF THE SOLID-PHASE CRYSTALLIZED A-(SI0.7GE0.3 SI) AND A-(SI/SI0.7GE0.3) BILAYER FILMS - INTERFACE VERSUS SURFACE NUCLEATED FILMS/
Authors: KIM TH RYU MK KIM KB
Citation: Th. Kim et al., A COMPARISON OF THE KINETICS AND THE EVOLUTION OF MICROSTRUCTURE OF THE SOLID-PHASE CRYSTALLIZED A-(SI0.7GE0.3 SI) AND A-(SI/SI0.7GE0.3) BILAYER FILMS - INTERFACE VERSUS SURFACE NUCLEATED FILMS/, JPN J A P 2, 37(2A), 1998, pp. 108-111
NOVEL SILICON-CONTAINING NLO POLYESTERS FOR ELECTROOPTIC APPLICATIONS
Authors: KIM HK RYU MK SHIN SH LEE SM KANG SJ
Citation: Hk. Kim et al., NOVEL SILICON-CONTAINING NLO POLYESTERS FOR ELECTROOPTIC APPLICATIONS, Journal of polymer engineering, 18(1-2), 1998, pp. 31-48
TUNABLE ELECTROLUMINESCENCE FROM SILICON-CONTAINING POLY(P-PHENYLENEVINYLENE)-RELATED COPOLYMERS WITH WELL-DEFINED STRUCTURES
Authors: KIM HK RYU MK KIM KD LEE SM CHO SW PARK JW
Citation: Hk. Kim et al., TUNABLE ELECTROLUMINESCENCE FROM SILICON-CONTAINING POLY(P-PHENYLENEVINYLENE)-RELATED COPOLYMERS WITH WELL-DEFINED STRUCTURES, Macromolecules, 31(4), 1998, pp. 1114-1123
NOVEL SILICON-CONTAINING POLY (P-PHENYLENEVINYLENE)-RELATED POLYMERS FOR BLUE-LIGHT-EMITTING DIODES
Authors: KIM HK RYU MK KIM KD LEE JH PARK JW CHO SW
Citation: Hk. Kim et al., NOVEL SILICON-CONTAINING POLY (P-PHENYLENEVINYLENE)-RELATED POLYMERS FOR BLUE-LIGHT-EMITTING DIODES, Synthetic metals, 91(1-3), 1997, pp. 297-299
NOVEL SILICON-CONTAINING POLY(P-PHENYLENEVINYLENE)-RELATED POLYMERS -SYNTHESIS AND OPTICAL-PROPERTIES
Authors: KIM HK RYU MK LEE SM
Citation: Hk. Kim et al., NOVEL SILICON-CONTAINING POLY(P-PHENYLENEVINYLENE)-RELATED POLYMERS -SYNTHESIS AND OPTICAL-PROPERTIES, Macromolecules, 30(4), 1997, pp. 1236-1239
THE EFFECT OF SURFACE NUCLEATION ON THE EVOLUTION OF CRYSTALLINE MICROSTRUCTURE DURING SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILMS ONSIO2
Authors: RYU MK HWANG SM KIM TH KIM KB MIN SH
Citation: Mk. Ryu et al., THE EFFECT OF SURFACE NUCLEATION ON THE EVOLUTION OF CRYSTALLINE MICROSTRUCTURE DURING SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILMS ONSIO2, Applied physics letters, 71(21), 1997, pp. 3063-3065
DEVICE CHARACTERISTICS OF POLYCRYSTALLINE SI0.84GE0.16 THIN-FILM TRANSISTORS GROWN FROM SI2H6 AND GEH4 SOURCE GASES
Authors: KIM JW RYU MK KIM KB HWANG CW BAE BS HAN MK KIM SJ
Citation: Jw. Kim et al., DEVICE CHARACTERISTICS OF POLYCRYSTALLINE SI0.84GE0.16 THIN-FILM TRANSISTORS GROWN FROM SI2H6 AND GEH4 SOURCE GASES, JPN J A P 2, 35(6B), 1996, pp. 757-759
LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SI1-XGEX FILMS USING SI2H6 AND GEH4 SOURCE GASES
Authors: KIM JW RYU MK KIM KB KIM SJ
Citation: Jw. Kim et al., LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SI1-XGEX FILMS USING SI2H6 AND GEH4 SOURCE GASES, Journal of the Electrochemical Society, 143(1), 1996, pp. 363-367
REDUCING THE THERMAL BUDGET OF SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILM USING SI0.47GE0.53 SEED LAYER
Authors: RYU MK KIM JW KIM TH KIM KB HWANG CW
Citation: Mk. Ryu et al., REDUCING THE THERMAL BUDGET OF SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILM USING SI0.47GE0.53 SEED LAYER, JPN J A P 2, 34(8B), 1995, pp. 1031-1033
SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI1-XGEX FILMS DEPOSITED ON SIO2 BY MOLECULAR-BEAM EPITAXY
Authors: HWANG CW RYU MK KIM KB LEE SC KIM CS
Citation: Cw. Hwang et al., SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI1-XGEX FILMS DEPOSITED ON SIO2 BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 77(7), 1995, pp. 3042-3047
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