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Results: 1-8 |
Results: 8
A 42-GHZ (F(MAX)) SIGE-BASE HBT USING REDUCED PRESSURE CVD
Authors: CHO DH RYUM BR HAN TH LEE SM SHIN SC LEE C
Citation: Dh. Cho et al., A 42-GHZ (F(MAX)) SIGE-BASE HBT USING REDUCED PRESSURE CVD, Solid-state electronics, 42(9), 1998, pp. 1641-1649
ATMOSPHERIC-PRESSURE CVD-GROWN SIGE EPITAXIAL BASE HETEROJUNCTION BIPOLAR-TRANSISTOR USING A TISI2 BASE ELECTRODE
Authors: LEE SM RYUM BR HAN TH CHO DH KIM B PYUN KE
Citation: Sm. Lee et al., ATMOSPHERIC-PRESSURE CVD-GROWN SIGE EPITAXIAL BASE HETEROJUNCTION BIPOLAR-TRANSISTOR USING A TISI2 BASE ELECTRODE, Journal of the Korean Physical Society, 30(2), 1997, pp. 315-319
MANUFACTURABLE SIGE BASE HBT REALIZING A 9GHZ-BANDWIDTH PREAMPLIFIER IN 10GBIT S OPTICAL RECEIVER/
Authors: RYUM BR HAN TH CHO DH LEE SM
Citation: Br. Ryum et al., MANUFACTURABLE SIGE BASE HBT REALIZING A 9GHZ-BANDWIDTH PREAMPLIFIER IN 10GBIT S OPTICAL RECEIVER/, Electronics Letters, 33(17), 1997, pp. 1479-1480
LOW-POWER CONSUMPTION AND LOW PHASE NOISE 2.4GHZ VCO USING SIGE HBT FOR WLL APPLICATION
Authors: CHO DH RYUM BR HAN TH LEE SM YEOM KW SHIN SC
Citation: Dh. Cho et al., LOW-POWER CONSUMPTION AND LOW PHASE NOISE 2.4GHZ VCO USING SIGE HBT FOR WLL APPLICATION, Electronics Letters, 33(12), 1997, pp. 1089-1090
MBE-GROWN SIGE BASE HBT WITH POLYSILICON-EMITTER AND TISI2 BASE OHMICLAYER
Authors: RYUM BR HAN TH
Citation: Br. Ryum et Th. Han, MBE-GROWN SIGE BASE HBT WITH POLYSILICON-EMITTER AND TISI2 BASE OHMICLAYER, Solid-state electronics, 39(11), 1996, pp. 1643-1648
THE EFFECT OF A PARASITIC POTENTIAL BARRIER ON THE NEUTRAL BASE RECOMBINATION CURRENT OF SI SIGE/SI DHBTS/
Authors: KIM SI RYUM BR KANG SW KIM W
Citation: Si. Kim et al., THE EFFECT OF A PARASITIC POTENTIAL BARRIER ON THE NEUTRAL BASE RECOMBINATION CURRENT OF SI SIGE/SI DHBTS/, Solid-state electronics, 37(3), 1994, pp. 517-519
A NEW PARAMETER EXTRACTION TECHNIQUE FOR SMALL-SIGNAL EQUIVALENT-CIRCUIT OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS
Authors: LEE SH RYUM BR KANG SW
Citation: Sh. Lee et al., A NEW PARAMETER EXTRACTION TECHNIQUE FOR SMALL-SIGNAL EQUIVALENT-CIRCUIT OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 233-238
EFFECT OF PAD AND INTERCONNECTION PARASITICS ON PHASE DELAY OF TRANSCONDUCTANCE IN ADVANCED BIPOLAR-TRANSISTORS
Authors: LEE S RYUM BR KWON OJ LEE JH
Citation: S. Lee et al., EFFECT OF PAD AND INTERCONNECTION PARASITICS ON PHASE DELAY OF TRANSCONDUCTANCE IN ADVANCED BIPOLAR-TRANSISTORS, Electronics Letters, 29(20), 1993, pp. 1797-1799
Risultati: 1-8 |