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Results:
1-14
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Results: 14
Authors:
Davis, RF
Gehrke, T
Linthicum, KJ
Rajagopal, P
Roskowski, AM
Zheleva, T
Preble, EA
Zorman, CA
Mehregany, M
Schwarz, U
Schuck, J
Grober, R
Citation: Rf. Davis et al., Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates, MRS I J N S, 6(14), 2001, pp. 1-16
Authors:
Brzovic, PS
Rajagopal, P
Hoyt, DW
King, MC
Klevit, RE
Citation: Ps. Brzovic et al., Structure of a BRCA1-BARD1 heterodimeric RING-RING complex, NAT ST BIOL, 8(10), 2001, pp. 833-837
Authors:
Natu, N
Rajagopal, P
Kalyanaraman, S
Citation: N. Natu et al., GSC: a generic source-based congestion control algorithm for reliable multicast, COMPUT COMM, 24(5-6), 2001, pp. 575-589
Authors:
Davis, RF
Gehrke, T
Linthicum, KJ
Zheleva, TS
Rajagopal, P
Zorman, CA
Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates, Z METALLKUN, 92(2), 2001, pp. 163-166
Authors:
Davis, RF
Gehrke, T
Linthicum, KJ
Preble, E
Rajagopal, P
Ronning, C
Zorman, C
Mehregany, M
Citation: Rf. Davis et al., Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates, J CRYST GR, 231(3), 2001, pp. 335-341
Authors:
Davis, RF
Gehrke, T
Linthicum, KJ
Zheleva, TS
Preble, EA
Rajagopal, P
Zorman, CA
Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization, J CRYST GR, 225(2-4), 2001, pp. 134-140
Authors:
Davis, RF
Gehrke, T
Linthicum, KJ
Zheleva, TS
Rajagopal, P
Zorman, CA
Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates, MRS I J N S, 5, 2000, pp. NIL_46-NIL_57
Authors:
Gehrke, T
Linthicum, KJ
Rajagopal, P
Preble, EA
Davis, RF
Citation: T. Gehrke et al., Advanced PENDEOEPITAXY (TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition, MRS I J N S, 5, 2000, pp. NIL_64-NIL_69
Authors:
Ronning, C
Hofsass, H
Stotzler, A
Deicher, M
Carlson, EP
Hartlieb, PJ
Gehrke, T
Rajagopal, P
Davis, RF
Citation: C. Ronning et al., Photoluminescence characterization of Mg implanted GaN, MRS I J N S, 5, 2000, pp. NIL_622-NIL_628
Authors:
Smith, SA
Lampert, WV
Rajagopal, P
Banks, AD
Thomson, D
Davis, RF
Citation: Sa. Smith et al., Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry, J VAC SCI A, 18(3), 2000, pp. 879-881
Authors:
Gehrke, T
Linthicum, KJ
Preble, E
Rajagopal, P
Ronning, C
Zorman, C
Mehregany, M
Davis, RF
Citation: T. Gehrke et al., Pendeo-epitaxial growth of gallium nitride on silicon substrates, J ELEC MAT, 29(3), 2000, pp. 306-310
Authors:
Gopinath, R
Reddy, P
Rajagopal, P
Citation: R. Gopinath et al., Intractable ventricular fibrillation after cross-clamp removal: Intra-aortic magnesium a savior, J CARDIOTHO, 13(6), 1999, pp. 801-802
Authors:
Zheleva, TS
Smith, SA
Thomson, DB
Linthicum, KJ
Rajagopal, P
Davis, RF
Citation: Ts. Zheleva et al., Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films, J ELEC MAT, 28(4), 1999, pp. L5-L8
Authors:
Linthicum, K
Gehrke, T
Thomson, D
Carlson, E
Rajagopal, P
Smith, T
Batchelor, D
Davis, R
Citation: K. Linthicum et al., Pendeoepitaxy of gallium nitride thin films, APPL PHYS L, 75(2), 1999, pp. 196-198
Risultati:
1-14
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