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Citation: Jb. Fedison et al., Electrical characteristics of 4.5 kV implanted anode 4H-SiC P-I-N junctionrectifiers, IEEE ELEC D, 22(3), 2001, pp. 130-132

Authors: Chow, TP Khemka, V Fedison, J Ramungul, N Matocha, K Tang, Y Gutmann, RJ

Citation: Tp. Chow et al., SiC and GaN bipolar power devices, SOL ST ELEC, 44(2), 2000, pp. 277-301

Authors: Khemka, V Patel, R Ramungul, N Chow, TP Ghezzo, M Kretchmer, J

Citation: V. Khemka et al., Characterization of phosphorus implantation in 4H-SiC, J ELEC MAT, 28(3), 1999, pp. 167-174

Authors: Ramungul, N Khemka, V Zheng, YP Patel, R Chow, TP

Citation: N. Ramungul et al., 6H-SiC P+N junctions fabricated by beryllium implantation, IEEE DEVICE, 46(3), 1999, pp. 465-470

Authors: Ramungul, N Chow, TP

Citation: N. Ramungul et Tp. Chow, Current-controlled negative resistance (CCNR) in SiCP-i-N rectifiers, IEEE DEVICE, 46(3), 1999, pp. 493-496