AAAAAA

   
Results: 1-7 |
Results: 7
Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-dopedSi-rich SiO2 films deposited by magnetron sputtering
Authors: Ran, GZ Chen, Y Ma, ZC Zong, WH Xie, LQ Guo, CG Qin, GC
Citation: Gz. Ran et al., Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-dopedSi-rich SiO2 films deposited by magnetron sputtering, CHIN PHYS L, 18(7), 2001, pp. 986-988
Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure
Authors: Chen, Y Ran, GZ Sun, YK Wang, YB Fu, JS Chen, WT Gong, YY Wu, DX Ma, ZC Zong, WH Qin, GG
Citation: Y. Chen et al., Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure, NUCL INST B, 183(3-4), 2001, pp. 305-310
4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures
Authors: Ran, GZ Qin, WC Ma, ZC Zong, WH Qin, GG
Citation: Gz. Ran et al., 4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures, NUCL INST B, 173(3), 2001, pp. 299-303
Blue to red electroluminescence from Au/native silicon oxide/p-Si structure subjected to rapid thermal annealing
Authors: Ran, GZ Fu, JS Qin, WC Zhang, BR Qiao, YP Qin, GG
Citation: Gz. Ran et al., Blue to red electroluminescence from Au/native silicon oxide/p-Si structure subjected to rapid thermal annealing, THIN SOL FI, 388(1-2), 2001, pp. 213-216
An effect of Si nanoparticles on enhancing Er3+ electroluminescence in Si-rich SiO2 : Er films
Authors: Ran, GZ Chen, Y Yuan, FC Qiao, YP Fu, JS Ma, ZC Zong, WH Qin, GG
Citation: Gz. Ran et al., An effect of Si nanoparticles on enhancing Er3+ electroluminescence in Si-rich SiO2 : Er films, SOL ST COMM, 118(11), 2001, pp. 599-602
Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation
Authors: Ran, GZ Wang, ST Fu, JS Ma, ZC Zong, WH Qin, GG
Citation: Gz. Ran et al., Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation, J LUMINESC, 93(1), 2001, pp. 75-80
Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering
Authors: Ran, GZ Chen, Y Qin, WC Fu, JS Ma, ZC Zong, WH Lu, H Qin, J Qin, GG
Citation: Gz. Ran et al., Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering, J APPL PHYS, 90(11), 2001, pp. 5835-5837
Risultati: 1-7 |