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Results: 1-13 |
Results: 13
The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p plus epitaxial silicon wafers
Authors: Holzl, R Fabry, L Range, KJ
Citation: R. Holzl et al., The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p plus epitaxial silicon wafers, APPL PHYS A, 74(1), 2002, pp. 35-39
Gettering efficiencies for Cu and Ni as a function of size and density of oxygen precipitates in p/p- silicon epitaxial wafers
Authors: Holzl, R Fabry, L Range, KJ
Citation: R. Holzl et al., Gettering efficiencies for Cu and Ni as a function of size and density of oxygen precipitates in p/p- silicon epitaxial wafers, APPL PHYS A, 73(2), 2001, pp. 137-142
Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations
Authors: Holzl, R Huber, A Fabry, L Range, KJ Blietz, M
Citation: R. Holzl et al., Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations, APPL PHYS A, 72(3), 2001, pp. 351-356
Effect of the nucleating agents Cr2O3 and LiF on crystallizing phases and microstructures of glass-ceramics prepared by using some industrial wastes
Authors: Khater, GA Morsi, MM Range, KJ
Citation: Ga. Khater et al., Effect of the nucleating agents Cr2O3 and LiF on crystallizing phases and microstructures of glass-ceramics prepared by using some industrial wastes, GL SCI T-GL, 74(7), 2001, pp. 192-198
Enhancement of gettering efficiencies of different silicon substrates during a 0.18 mu m LTB CMOS process simulation - Stratigraphy by a novel chemical ultra-trace depth-profiling
Authors: Hoelzl, R Fabry, L Range, KJ Wahlich, R Kissinger, G
Citation: R. Hoelzl et al., Enhancement of gettering efficiencies of different silicon substrates during a 0.18 mu m LTB CMOS process simulation - Stratigraphy by a novel chemical ultra-trace depth-profiling, MICROEL ENG, 56(1-2), 2001, pp. 153-156
High pressure synthesis of molybdenum nitride MoN
Authors: Zhao, XD Range, KJ
Citation: Xd. Zhao et Kj. Range, High pressure synthesis of molybdenum nitride MoN, J ALLOY COM, 296(1-2), 2000, pp. 72-74
Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni
Authors: Hoelzl, R Range, KJ Fabry, L Hage, J Raineri, V
Citation: R. Hoelzl et al., Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni, MAT SCI E B, 73(1-3), 2000, pp. 95-98
Absolute configuration of (-)-4-(3,4-dichlorophenyl)-4-(2-pyridyl)butanoicacid: essential information to determine crucial steric features of arpromidine-type histamine H-2 receptor agonists
Authors: Zabel, M Breu, J Rau, F Range, KJ Krey, V Uffrecht, A Buschauer, A
Citation: M. Zabel et al., Absolute configuration of (-)-4-(3,4-dichlorophenyl)-4-(2-pyridyl)butanoicacid: essential information to determine crucial steric features of arpromidine-type histamine H-2 receptor agonists, ACT CRYST C, 56, 2000, pp. 250-251
Gettering of copper and nickel in p/p(+) epitaxial wafers
Authors: Hoelzl, R Huber, D Range, KJ Fabry, L Hage, J Wahlich, R
Citation: R. Hoelzl et al., Gettering of copper and nickel in p/p(+) epitaxial wafers, J ELCHEM SO, 147(7), 2000, pp. 2704-2710
The valence states of nickel, tin, and sulfur in the ternary chalcogenide Ni3Sn2S2-XPS, Ni-61 and Sn-119 Mossbauer investigations, and band structurecalculations
Authors: Gutlich, P Range, KJ Felser, C Schultz-Munzenberg, C Tremel, W Walcher, D Waldeck, M
Citation: P. Gutlich et al., The valence states of nickel, tin, and sulfur in the ternary chalcogenide Ni3Sn2S2-XPS, Ni-61 and Sn-119 Mossbauer investigations, and band structurecalculations, ANGEW CHEM, 38(16), 1999, pp. 2381-2384
Ba-Ca-Cu oxycarbonate thin films, prepared by pulsed laser deposition: structure, growth mechanism and superconducting properties
Authors: Calestani, G Migliori, A Spreitzer, U Hauser, S Fuchs, M Barowski, H Schauer, T Assmann, W Range, KJ Varlashkin, A Waldmann, O Muller, P Renk, KF
Citation: G. Calestani et al., Ba-Ca-Cu oxycarbonate thin films, prepared by pulsed laser deposition: structure, growth mechanism and superconducting properties, PHYSICA C, 312(3-4), 1999, pp. 225-232
Calibrated contamination spiking method for silicon wafers in the 10(10)-10(12) atom/cm(2) range
Authors: Holzl, R Range, KJ Fabry, L Huber, D
Citation: R. Holzl et al., Calibrated contamination spiking method for silicon wafers in the 10(10)-10(12) atom/cm(2) range, J ELCHEM SO, 146(6), 1999, pp. 2245-2253
Crystal structure of [meso-1,2-bis(2-chloro-6-fluoro-5-hydroxy-phenyl)ethylenediamine](sulfinylbismethyl-S)sulfatoplatinum(II), (HOClFC6H2)(2)(CHNH2)(2)Pt(SO4)(SO(CH3)(2))(3)
Authors: Klement, U Range, KJ Gust, R
Citation: U. Klement et al., Crystal structure of [meso-1,2-bis(2-chloro-6-fluoro-5-hydroxy-phenyl)ethylenediamine](sulfinylbismethyl-S)sulfatoplatinum(II), (HOClFC6H2)(2)(CHNH2)(2)Pt(SO4)(SO(CH3)(2))(3), Z KRIST-NEW, 213(1), 1998, pp. 33-34
Risultati: 1-13 |