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Citation: E. Rauly et al., Investigation of deep submicron single and double gate SOI MOSFETs in accumulation mode for enhanced performance, EL SOLID ST, 4(3), 2001, pp. G28-G30

Authors: Flandre, D Adriaensen, S Akheyar, A Crahay, A Demeus, L Delatte, P Dessard, V Iniguez, B Neve, A Katschmarskyj, B Loumaye, P Laconte, J Martinez, I Picun, G Rauly, E Renaux, C Spote, D Zitout, M Dehan, M Parvais, B Simon, P Vanhoenacker, D Raskin, JP

Citation: D. Flandre et al., Fully depleted SOICMOS technology for heterogeneous micropower, high-temperature or RF microsystems, SOL ST ELEC, 45(4), 2001, pp. 541-549

Authors: Rauly, E Potavin, O Balestra, F Raynaud, C

Citation: E. Rauly et al., On the subthreshold swing and short channel effects in single and double gate deep submicron SOI-MOSFETs, SOL ST ELEC, 43(11), 1999, pp. 2033-2037