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Results:
1-10
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Results: 10
Authors:
Waltereit, P
Brandt, O
Ramsteiner, M
Trampert, A
Grahn, HT
Menniger, J
Reiche, M
Ploog, KH
Citation: P. Waltereit et al., M-plane GaN(1(1)over-bar-00) grown on gamma-LiAlO2(100): nitride semiconductors free of internal electrostatic fields, J CRYST GR, 227, 2001, pp. 437-441
Authors:
Wiegand, M
Reiche, M
Gosele, U
Gutjahr, K
Stolze, D
Longwitz, R
Citation: M. Wiegand et al., Wafer bonding of silicon wafers covered with various surface layers, SENS ACTU-A, 86(1-2), 2000, pp. 91-95
Authors:
Reiche, M
Gosele, U
Wiegand, M
Citation: M. Reiche et al., Modification of Si(100)-surfaces by SF6 plasma etching - Application to wafer direct bonding, CRYST RES T, 35(6-7), 2000, pp. 807-821
Authors:
Waltereit, P
Brandt, O
Ramsteiner, M
Trampert, A
Grahn, HT
Menniger, J
Reiche, M
Uecker, R
Reiche, P
Ploog, KH
Citation: P. Waltereit et al., Growth of M-plane GaN(1(1)over-bar-00): A way to evade electrical polarization in nitrides, PHYS ST S-A, 180(1), 2000, pp. 133-138
Authors:
Waltereit, P
Brandt, O
Trampert, A
Grahn, HT
Menniger, J
Ramsteiner, M
Reiche, M
Ploog, KH
Citation: P. Waltereit et al., Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes, NATURE, 406(6798), 2000, pp. 865-868
Authors:
Reiche, M
Wiegand, M
Gosele, U
Citation: M. Reiche et al., Infrared spectroscopic analysis of plasma-treated Si(100)-surfaces, MIKROCH ACT, 133(1-4), 2000, pp. 35-43
Authors:
Alexe, M
Dragoi, V
Reiche, M
Gosele, U
Citation: M. Alexe et al., Low temperature GaAs/Si direct wafer bonding, ELECTR LETT, 36(7), 2000, pp. 677-678
Authors:
Wiegand, M
Reiche, M
Gosele, U
Citation: M. Wiegand et al., Time-dependent surface properties and wafer bonding of O-2-plasma-treated sillicon (100) surfaces, J ELCHEM SO, 147(7), 2000, pp. 2734-2740
Authors:
Gosele, U
Tong, QY
Schumacher, A
Krauter, G
Reiche, M
Plossl, A
Kopperschmidt, P
Lee, TH
Kim, WJ
Citation: U. Gosele et al., Wafer bonding for microsystems technologies, SENS ACTU-A, 74(1-3), 1999, pp. 161-168
Authors:
Waltereit, P
Brandt, O
Trampert, A
Ramsteiner, M
Reiche, M
Qi, M
Ploog, KH
Citation: P. Waltereit et al., Influence of AlN nucleation layers on growth mode and strain relief of GaNgrown on 6H-SiC(0001), APPL PHYS L, 74(24), 1999, pp. 3660-3662
Risultati:
1-10
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