Citation: S. Oswald et R. Reiche, Binding state information from XPS depth profiling: capabilities and limits, APPL SURF S, 179(1-4), 2001, pp. 307-315
Citation: R. Reiche et al., XPS and factor analysis for investigation of sputter-cleaned surfaces of metal (Re, Ir, Cr)-silicon thin films, APPL SURF S, 179(1-4), 2001, pp. 316-323
Citation: R. Reiche et W. Hauffe, Pyramid formation on a high index copper bicrystal during bombardment with10 keV argon and krypton ions, APPL SURF S, 165(4), 2000, pp. 279-287
Authors:
Reiche, R
Oswald, S
Wetzig, K
Dobler, M
Reuther, H
Walterfang, M
Citation: R. Reiche et al., The transformation of beta-FeSi2 under Ar ion bombardment studied by XPS, AES and Mossbauer spectroscopy, NUCL INST B, 160(3), 2000, pp. 397-407
Authors:
Reiche, R
Yubero, F
Espinos, JP
Gonzalez-Elipe, AR
Citation: R. Reiche et al., Structure, microstructure and electronic characterisation of the Al2O3/SiO2 interface by electron spectroscopies, SURF SCI, 457(1-2), 2000, pp. 199-210
Authors:
Reiche, R
Oswald, S
Hofman, D
Thomas, J
Wetzig, K
Citation: R. Reiche et al., Bombardment-induced silicide formation at rhenium-silicon interfaces studied by XPS and TEM, FRESEN J AN, 365(1-3), 1999, pp. 76-82
Authors:
Kurt, R
Hoffmann, V
Reiche, R
Pitschke, W
Wetzig, K
Citation: R. Kurt et al., Chemical analysis of thin films by means of SS-MS, GD-OES, and XBS demonstrated at Ir-Si thermoelectrica, FRESEN J AN, 363(2), 1999, pp. 179-184