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Citation: Ev. Astrova et al., Real structure of a microchannel silicon studied by X-ray diffraction, TECH PHYS L, 27(1), 2001, pp. 41-44

Authors: Shul'pina, IL Astrova, EV Ratnikov, VV Remenyuk, AD Tkachenko, AG

Citation: Il. Shul'Pina et al., Characterization of microchannel Si by HRXD and topography, J PHYS D, 34(10A), 2001, pp. A140-A143

Authors: Astrova, EV Remenyuk, AD Tkachenko, AG Shul'pina, PL

Citation: Ev. Astrova et al., Nondestructive diagnostics of microchannel (macroporous) silicon by X-ray topography, TECH PHYS L, 26(12), 2000, pp. 1087-1090

Authors: Astrova, EV Voronkov, VB Lebedev, AA Lodygin, AN Remenyuk, AD

Citation: Ev. Astrova et al., Effect of heat treatment on the photoelectric properties of Si(Zn) photodetectors, SEMICONDUCT, 33(3), 1999, pp. 359-365

Authors: Agekyan, VF Stepanov, YA Emtsev, VV Lebedev, AA Poloskin, DS Remenyuk, AD

Citation: Vf. Agekyan et al., Effect of gamma irradiation on the photoluminescence kinetics of porous silicon, SEMICONDUCT, 33(12), 1999, pp. 1315-1317

Authors: Astrova, EV Voronkov, VB Remenyuk, AD Shuman, VB Tolmachev, VA

Citation: Ev. Astrova et al., Variation of the parameters and composition of thin films of porous silicon as a result of oxidation: ellipsometric studies, SEMICONDUCT, 33(10), 1999, pp. 1149-1155