AAAAAA

   
Results: 1-11 |
Results: 11
A retargetable VLIW compiler framework for DSPs with instruction-level parallelism
Authors: Rajagopalan, S Rajan, SP Malik, S Rigo, S Araujo, G Takayama, K
Citation: S. Rajagopalan et al., A retargetable VLIW compiler framework for DSPs with instruction-level parallelism, IEEE COMP A, 20(11), 2001, pp. 1319-1328
Silicon thinning and polishing on packaged devices
Authors: Beaudoin, F Perdu, P Desplats, R Rigo, S Lewis, D
Citation: F. Beaudoin et al., Silicon thinning and polishing on packaged devices, MICROEL REL, 41(9-10), 2001, pp. 1557-1561
Coordination behaviour of sulfanilamide derivatives. Crystal structures of[Hg( sulfamethoxypyridazinato)(2)], [Cd(sulfadimidinato)(2)(H2O)] center dot 2H(2)O and [Zn(sulfamethoxazolato)(2)-(pyridine)(2)(H2O)(2)]
Authors: Garcia-Raso, A Fiol, JJ Rigo, S Lopez-Lopez, A Molins, E Espinosa, E Borras, E Alzuet, G Borras, J Castineiras, A
Citation: A. Garcia-raso et al., Coordination behaviour of sulfanilamide derivatives. Crystal structures of[Hg( sulfamethoxypyridazinato)(2)], [Cd(sulfadimidinato)(2)(H2O)] center dot 2H(2)O and [Zn(sulfamethoxazolato)(2)-(pyridine)(2)(H2O)(2)], POLYHEDRON, 19(8), 2000, pp. 991-1004
Reactions in the system O-2-NO-N2O in a conventional furnace. II. Chemicalreactions between O-2 and NO (vol 146, pg 4586, 1999)
Authors: Akermark, T Ganem, JJ Trimaille, I Rigo, S
Citation: T. Akermark et al., Reactions in the system O-2-NO-N2O in a conventional furnace. II. Chemicalreactions between O-2 and NO (vol 146, pg 4586, 1999), J ELCHEM SO, 147(1), 2000, pp. 394-394
Temperature and pressure dependence of the oxygen exchange at the SiO2-Si interface, O-2 <-> SiO2, during dry thermal oxidation of silicon
Authors: Akermark, T Ganem, JJ Trimaille, I Vickridge, I Rigo, S
Citation: T. Akermark et al., Temperature and pressure dependence of the oxygen exchange at the SiO2-Si interface, O-2 <-> SiO2, during dry thermal oxidation of silicon, J PHYS CH B, 103(45), 1999, pp. 9910-9914
Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2
Authors: von Bardeleben, HJ Cantin, JL Gosset, LG Ganem, JJ Trimaille, I Rigo, S
Citation: Hj. Von Bardeleben et al., Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2, J NON-CRYST, 245, 1999, pp. 169-174
Time dependence of the oxygen exchange O-2 <-> SiO2 at the SiO2-Si interface during dry thermal oxidation of silicon
Authors: Akermark, T Gosset, LG Ganem, JJ Trimaille, I Vickridge, I Rigo, S
Citation: T. Akermark et al., Time dependence of the oxygen exchange O-2 <-> SiO2 at the SiO2-Si interface during dry thermal oxidation of silicon, J APPL PHYS, 86(2), 1999, pp. 1153-1155
Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations
Authors: Gosset, LG Ganem, JJ von Bardeleben, HJ Rigo, S Trimaille, I Cantin, JL Akermark, T Vickridge, IC
Citation: Lg. Gosset et al., Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations, J APPL PHYS, 85(7), 1999, pp. 3661-3665
Loss of oxygen at the Si-SiO2 interface during dry oxidation of silicon
Authors: Akermark, T Gosset, LG Ganem, JJ Trimaille, I Rigo, S
Citation: T. Akermark et al., Loss of oxygen at the Si-SiO2 interface during dry oxidation of silicon, J ELCHEM SO, 146(9), 1999, pp. 3389-3392
Reactions in the system O-2-NO-SiO2 in a conventional furnace - I. Oxygen exchange reactions
Authors: Akermark, T Ganem, JJ Trimaille, I Rigo, S
Citation: T. Akermark et al., Reactions in the system O-2-NO-SiO2 in a conventional furnace - I. Oxygen exchange reactions, J ELCHEM SO, 146(12), 1999, pp. 4580-4585
Reactions in the system O-2-NO-SiO2 in a conventional furnace - II. Chemical reactions between O-2 and NO
Authors: Akermark, T Ganem, JJ Trimaille, I Rigo, S
Citation: T. Akermark et al., Reactions in the system O-2-NO-SiO2 in a conventional furnace - II. Chemical reactions between O-2 and NO, J ELCHEM SO, 146(12), 1999, pp. 4586-4589
Risultati: 1-11 |