Authors:
Koester, SJ
Rim, K
Chu, JO
Mooney, PM
Ott, JA
Hargrove, MA
Citation: Sj. Koester et al., Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy, APPL PHYS L, 79(14), 2001, pp. 2148-2150
Citation: Sm. Kim et al., Pharyngeal pressure analysis by the finite element method during liquid bolus swallow, ANN OTOL RH, 109(6), 2000, pp. 585-589
Authors:
Singh, DV
Rim, K
Mitchell, TO
Hoyt, JL
Gibbons, JF
Citation: Dv. Singh et al., Measurement of the conduction band offsets in Si/Si1-x-yGexCy and Si/Si1-yCy heterostructures using metal-oxide-semiconductor capacitors, J APPL PHYS, 85(2), 1999, pp. 978-984
Authors:
Singh, DV
Rim, K
Mitchell, TO
Hoyt, JL
Gibbons, JF
Citation: Dv. Singh et al., Admittance spectroscopy analysis of the conduction band offsets in Si/Si1-x-yGexCy and Si/Si1-yCy heterostructures, J APPL PHYS, 85(2), 1999, pp. 985-993