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Results:
1-8
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Results: 8
Authors:
Simeonov, SS
Kafedjiiska, E
Szekeres, A
Ristoscu, C
Gyorgy, E
Mihailescu, IN
Citation: Ss. Simeonov et al., Trap-assisted tunneling at temperatures near 77 K in laser annealed Si n(+)-p junctions, J APPL PHYS, 90(2), 2001, pp. 860-865
Authors:
Gyorgy, E
Ristoscu, C
Mihailescu, IN
Klini, A
Vainos, N
Fotakis, C
Ghica, C
Schmerber, G
Faerber, J
Citation: E. Gyorgy et al., Role of laser pulse duration and gas pressure in deposition of AlN thin films, J APPL PHYS, 90(1), 2001, pp. 456-461
Structural comparison between La0.60Y0.07Ca0.33MnO3-delta bulk and pulsed laser deposited thin films
Authors:
Teodorescu, VS
Nistor, LC
Valeanu, M
Ghica, C
Sandu, C
Mihailescu, IN
Ristoscu, C
Deville, JP
Werckmann, J
Citation: Vs. Teodorescu et al., Structural comparison between La0.60Y0.07Ca0.33MnO3-delta bulk and pulsed laser deposited thin films, J MAGN MAGN, 211(1-3), 2000, pp. 54-60
Authors:
Koleva, ME
Zotova, S
Atanasov, PA
Tomov, RI
Ristoscu, C
Nelea, V
Chiritescu, C
Gyorgy, E
Ghica, C
Mihailescu, IN
Citation: Me. Koleva et al., Sr-ferrite thin films grown on sapphire by pulsed laser deposition, APPL SURF S, 168(1-4), 2000, pp. 108-113
Authors:
Nelea, V
Ristoscu, C
Chiritescu, C
Ghica, C
Mihailescu, IN
Pelletier, H
Mille, P
Cornet, A
Citation: V. Nelea et al., Pulsed laser deposition of hydroxyapatite thin films on Ti-5A1-2.5Fe substrates with and without buffer layers, APPL SURF S, 168(1-4), 2000, pp. 127-131
Authors:
Koleva, M
Atanasov, P
Tomov, R
Vankov, O
Matin, C
Ristoscu, C
Mihailescu, I
Iorgov, D
Angelova, S
Ghelev, C
Mihailov, N
Citation: M. Koleva et al., Pulsed laser deposition of barium hexaferrite (BaFe12O19) thin films, APPL SURF S, 154, 2000, pp. 485-491
Authors:
Koleva, M
Tomov, R
Zotova, S
Atanasov, P
Martin, C
Ristoscu, C
Mihailescu, I
Citation: M. Koleva et al., Growth and characterization of pulsed laser-deposited Mn-Zn ferrite thin films, VACUUM, 58(2-3), 2000, pp. 294-299
Authors:
Neamtu, J
Mihailescu, IN
Ristoscu, C
Hermann, J
Citation: J. Neamtu et al., Theoretical modelling of phenomena in the pulsed-laser deposition process:Application to Ti targets ablation in low-pressure N-2, J APPL PHYS, 86(11), 1999, pp. 6096-6106
Risultati:
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