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Results: 1-25/45
Authors:
Della Ventura, G
Robert, JL
Sergent, J
Hawthorne, FC
Delbove, F
Citation: G. Della Ventura et al., Constraints on F vs. OH incorporation in synthetic Al-[6]-bearing monoclinic amphiboles, EUR J MINER, 13(5), 2001, pp. 841-847
Authors:
Pernot, J
Camassel, J
Contreras, S
Robert, JL
Bluet, JM
Michaud, JF
Billon, T
Citation: J. Pernot et al., Control of Al-implantation doping in 4H-SiC, MAT SCI E B, 80(1-3), 2001, pp. 362-365
Authors:
Konczewicz, L
Jouault, B
Contreras, S
Sadowski, ML
Robert, JL
Blanc, S
Fontaine, C
Citation: L. Konczewicz et al., Electrical transport properties in (111) growth-axis GaAlAs/GaInAs heterostructures, PHYS ST S-B, 223(2), 2001, pp. 507-512
Authors:
Konczewicz, L
Lee, HY
Sadowski, ML
Letartre, X
Leclercq, JL
Viktorovitch, P
Robert, JL
Citation: L. Konczewicz et al., GaAlAs-based micromachined accelerometer, PHYS ST S-B, 223(2), 2001, pp. 593-596
Authors:
Guichard, F
Bourget, E
Robert, JL
Citation: F. Guichard et al., Scaling the influence of topographic heterogeneity on intertidal benthic communities: alternate trajectories mediated by hydrodynamics and shading, MAR ECOL-PR, 217, 2001, pp. 27-41
Authors:
Boukili, B
Robert, JL
Beny, JM
Holtz, F
Citation: B. Boukili et al., Structural effects of OH double right arrow F substitution in trioctahedral micas of the system: K2O-FeO-Fe2O3-Al2O3-SiO2-H2O-HF, SCHWEIZ MIN, 81(1), 2001, pp. 55-67
Authors:
Pernot, J
Zawadzki, W
Contreras, S
Robert, JL
Neyret, E
Di Cioccio, L
Citation: J. Pernot et al., Electrical transport in n-type 4H silicon carbide, J APPL PHYS, 90(4), 2001, pp. 1869-1878
Authors:
Litwin-Staszewska, E
Suski, T
Piotrzkowski, R
Grzegory, I
Bockowski, M
Robert, JL
Konczewicz, L
Wasik, D
Kaminska, E
Cote, D
Clerjaud, B
Citation: E. Litwin-staszewska et al., Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing, J APPL PHYS, 89(12), 2001, pp. 7960-7965
Authors:
Camassel, J
Contreras, S
Robert, JL
Citation: J. Camassel et al., SiC materials: a semiconductor family for the next century, CR AC S IV, 1(1), 2000, pp. 5-21
Authors:
Robert, JL
Citation: Jl. Robert, Untitled, VIDE, 55(298), 2000, pp. 315-319
Authors:
Schreyer, W
Wodara, U
Marler, B
van Aken, PA
Seifert, F
Robert, JL
Citation: W. Schreyer et al., Synthetic tourmaline (olenite) with excess baron replacing silicon in the tetrahedral site: I. Synthesis conditions, chemical and spectroscopic evidence, EUR J MINER, 12(3), 2000, pp. 529-541
Authors:
Lee, HY
Letartre, X
Leclercq, JL
Viktorovitch, P
Konczewicz, L
Sadowski, M
Robert, JL
Citation: Hy. Lee et al., GaAlAs-based micromachined accelerometer, HIGH PR RES, 19(1-6), 2000, pp. 737-741
Authors:
Alause, H
Knap, W
Robert, JL
Planel, R
Thierry-Mieg, V
Julien, FH
Zekentes, K
Mosser, V
Citation: H. Alause et al., Room-temperature GaAs/AlGaAs multiple-quantum-well optical modulators for the 3-5 mu m atmospheric window, SEMIC SCI T, 15(7), 2000, pp. 724-727
Authors:
Weber, B
Carmet, A
Robert, JL
Citation: B. Weber et al., Prediction of the fatigue crack initiation orientation by the use of a critical plane multiaxial fatigue criterion, REV METALL, 97(6), 2000, pp. 815
Authors:
Frayssinet, E
Prystawko, P
Leszczynski, M
Domagala, J
Knap, W
Robert, JL
Citation: E. Frayssinet et al., Microwave plasma etching of GaN in nitrogen atmosphere, PHYS ST S-A, 181(1), 2000, pp. 151-155
Authors:
Bluet, JM
Pernot, J
Camassel, J
Contreras, S
Robert, JL
Michaud, JF
Billon, T
Citation: Jm. Bluet et al., Activation of aluminum implanted at high doses in 4H-SiC, J APPL PHYS, 88(4), 2000, pp. 1971-1977
Authors:
Bosc, F
Sicart, J
Robert, JL
Piotrzkowski, R
Citation: F. Bosc et al., Electron mobility and charge correlation in silicon doped GaAs-AlAs short period superlattices, J APPL PHYS, 88(3), 2000, pp. 1515-1519
Authors:
Robert, JL
Bosc, F
Sicart, J
Mosser, V
Lasseur, J
Citation: Jl. Robert et al., Pressure sensors based on silicon doped GaAs-AlAs superlattices, J APPL PHYS, 87(6), 2000, pp. 2941-2946
Authors:
Muller, F
Drits, V
Plancon, A
Robert, JL
Citation: F. Muller et al., Structural transformation of 2 : 1 dioctahedral layer silicates during dehydroxylation-rehydroxylation reactions, CLAY CLAY M, 48(5), 2000, pp. 572-585
Authors:
Pernot, J
Contreras, S
Camassel, J
Robert, JL
Zawadzki, W
Neyret, E
Di Cioccio, L
Citation: J. Pernot et al., Free electron density and mobility in high-quality 4H-SiC, APPL PHYS L, 77(26), 2000, pp. 4359-4361
Authors:
Robert, JL
Della Ventura, G
Welch, MD
Hawthorne, FC
Citation: Jl. Robert et al., The OH-F substitution in synthetic pargasite at 1.5 kbar, 850 degrees C, AM MINERAL, 85(7-8), 2000, pp. 926-931
Authors:
Fialips-Guedon, CI
Robert, JL
Delbove, F
Citation: Ci. Fialips-guedon et al., Experimental study of Cr incorporation in pargasite, AM MINERAL, 85(5-6), 2000, pp. 687-693
Authors:
Hawthorne, FC
Welch, MD
Della Ventrua, G
Liu, SX
Robert, JL
Jenkins, DM
Citation: Fc. Hawthorne et al., Short-range order in synthetic aluminous tremolites: An infrared and triple-quantum MAS NMR study, AM MINERAL, 85(11-12), 2000, pp. 1716-1724
Authors:
Grandjean, J
Robert, JL
Citation: J. Grandjean et Jl. Robert, Li-7 double quantum filtered NMR and multinuclear relaxation rates of claysuspensions: The effect of clay concentration and nonionic surfactants, J MAGN RES, 138(1), 1999, pp. 43-47
Authors:
Della Ventura, G
Hawthorne, FC
Robert, JL
Delbove, F
Welch, MF
Raudsepp, M
Citation: G. Della Ventura et al., Short-range order of cations in synthetic amphiboles along the richterite-pargasite join, EUR J MINER, 11(1), 1999, pp. 79-94