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Results: 1-9 |
Results: 9
Oxidized silicon surfaces studied by high resolution Si 2p core-level photoelectron spectroscopy using synchrotron radiation
Authors: Jolly, F Rochet, F Dufour, G Grupp, C Taleb-Ibrahimi, A
Citation: F. Jolly et al., Oxidized silicon surfaces studied by high resolution Si 2p core-level photoelectron spectroscopy using synchrotron radiation, J NON-CRYST, 280(1-3), 2001, pp. 150-155
Interaction of acetylene on Si(111): growth and luminescence study of Si1-xCx thin layers
Authors: De Crescenzi, M Bernardini, R Gunnella, R Castrucci, P Casalboni, M Pizzoferrato, R Dufour, G Rochet, F
Citation: M. De Crescenzi et al., Interaction of acetylene on Si(111): growth and luminescence study of Si1-xCx thin layers, PHIL MAG B, 80(4), 2000, pp. 669-678
Core-electron spectroscopy of nonconjugated linear dienes chemisorbed on Si(001)-2X1 with synchrotron radiation
Authors: Bournel, F Jolly, F Rochet, F Dufour, G Sirotti, F Torelli, P
Citation: F. Bournel et al., Core-electron spectroscopy of nonconjugated linear dienes chemisorbed on Si(001)-2X1 with synchrotron radiation, PHYS REV B, 62(11), 2000, pp. 7645-7653
Oxidation of the H-Si(111)-1 x 1 surface: high resolution Si 2p core-levelspectroscopy with synchrotron radiation
Authors: Jolly, F Rochet, F Dufour, G Grupp, C Taleb-Ibrahimi, A
Citation: F. Jolly et al., Oxidation of the H-Si(111)-1 x 1 surface: high resolution Si 2p core-levelspectroscopy with synchrotron radiation, SURF SCI, 463(2), 2000, pp. 102-108
Electronic density of empty states of Ge/Si(111) epitaxial layers: Theory and experiment
Authors: Castrucci, P Gunnella, R De Crescenzi, M Sacchi, M Dufour, G Rochet, F
Citation: P. Castrucci et al., Electronic density of empty states of Ge/Si(111) epitaxial layers: Theory and experiment, PHYS REV B, 60(8), 1999, pp. 5759-5769
Soft-x-ray photoelectron, x-ray absorption, and autoionization spectroscopy of 1,5-cyclooctadiene on Si(001)-2 x 1
Authors: Jolly, F Bournel, F Rochet, F Dufour, G Sirotti, F Taleb, A
Citation: F. Jolly et al., Soft-x-ray photoelectron, x-ray absorption, and autoionization spectroscopy of 1,5-cyclooctadiene on Si(001)-2 x 1, PHYS REV B, 60(4), 1999, pp. 2930-2940
Si1-xCx formation by reaction of Si(111) with acetylene: growth mode, electronic structure and luminescence investigation
Authors: De Crescenzi, M Marucci, M Gunnella, R Castrucci, P Casalboni, M Dufour, G Rochet, F
Citation: M. De Crescenzi et al., Si1-xCx formation by reaction of Si(111) with acetylene: growth mode, electronic structure and luminescence investigation, SURF SCI, 426(3), 1999, pp. 277-289
Temperature effects on the Si/SiO2 interface defects and suboxide distribution
Authors: Jolly, F Cantin, JL Rochet, F Dufour, G von Bardeleben, HJ
Citation: F. Jolly et al., Temperature effects on the Si/SiO2 interface defects and suboxide distribution, J NON-CRYST, 245, 1999, pp. 217-223
Influence of Te on the morphology of InAs self-assembled nanocrystals
Authors: Safar, GAM Rodrigues, WN Moreira, MVB de Oliveira, AG Neves, BRA Vilela, JM Andrade, MS Rochet, F
Citation: Gam. Safar et al., Influence of Te on the morphology of InAs self-assembled nanocrystals, J CRYST GR, 202, 1999, pp. 1172-1175
Risultati: 1-9 |