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Results: 1-10 |
Results: 10
Texture in Ti/Al and Nb/Al multilayer thin films: Role of Cu
Authors: Lucadamo, G Barmak, K Rodbell, KP
Citation: G. Lucadamo et al., Texture in Ti/Al and Nb/Al multilayer thin films: Role of Cu, J MATER RES, 16(5), 2001, pp. 1449-1459
Electromigration in AlCu lines: comparison of Dual Damascene and metal reactive ion etching
Authors: Filippi, RG Gribelyuk, MA Joseph, T Kane, T Sullivan, TD Clevenger, LA Costrini, G Gambino, J Iggulden, RC Kiewra, EW Ning, XJ Ravikumar, R Schnabel, RF Stojakovic, G Weber, SJ Gignac, LM Hu, CK Rath, DL Rodbell, KP
Citation: Rg. Filippi et al., Electromigration in AlCu lines: comparison of Dual Damascene and metal reactive ion etching, THIN SOL FI, 388(1-2), 2001, pp. 303-314
Texture inheritance in Al(Cu) interconnect materials
Authors: Murray, CE Rodbell, KP
Citation: Ce. Murray et Kp. Rodbell, Texture inheritance in Al(Cu) interconnect materials, J APPL PHYS, 89(4), 2001, pp. 2337-2342
Porosity characterization by beam-based three-photon positron annihilationspectroscopy
Authors: Petkov, MP Weber, MH Lynn, KG Rodbell, KP
Citation: Mp. Petkov et al., Porosity characterization by beam-based three-photon positron annihilationspectroscopy, APPL PHYS L, 79(23), 2001, pp. 3884-3886
Copper metallization for high performance silicon technology
Authors: Rosenberg, R Edelstein, DC Hu, CK Rodbell, KP
Citation: R. Rosenberg et al., Copper metallization for high performance silicon technology, ANN R MATER, 30, 2000, pp. 229-262
The microstructure of submicrometer wide planar-reactive ion etched versustrench-damascene AlCu lines
Authors: Rodbell, KP Gignac, LM Hurd, JL Filippi, R Wang, YY Clevenger, LA Iggulden, RC Schnabel, RF Weber, S
Citation: Kp. Rodbell et al., The microstructure of submicrometer wide planar-reactive ion etched versustrench-damascene AlCu lines, J APPL PHYS, 88(9), 2000, pp. 5093-5099
Probing capped and uncapped mesoporous low-dielectric constant films usingpositron annihilation lifetime spectroscopy
Authors: Petkov, MP Weber, MH Lynn, KG Rodbell, KP
Citation: Mp. Petkov et al., Probing capped and uncapped mesoporous low-dielectric constant films usingpositron annihilation lifetime spectroscopy, APPL PHYS L, 77(16), 2000, pp. 2470-2472
Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant
Authors: Petkov, MP Weber, MH Lynn, KG Rodbell, KP Cohen, SA
Citation: Mp. Petkov et al., Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant, J APPL PHYS, 86(6), 1999, pp. 3104-3109
Mechanisms for microstructure evolution in electroplated copper thin filmsnear room temperature
Authors: Harper, JME Cabral, C Andricacos, PC Gignac, L Noyan, IC Rodbell, KP Hu, CK
Citation: Jme. Harper et al., Mechanisms for microstructure evolution in electroplated copper thin filmsnear room temperature, J APPL PHYS, 86(5), 1999, pp. 2516-2525
Doppler broadening positron annihilation spectroscopy: A technique for measuring open-volume defects in silsesquioxane spin-on glass films
Authors: Petkov, MP Weer, MH Lynn, KG Rodbell, KP Cohen, SA
Citation: Mp. Petkov et al., Doppler broadening positron annihilation spectroscopy: A technique for measuring open-volume defects in silsesquioxane spin-on glass films, APPL PHYS L, 74(15), 1999, pp. 2146-2148
Risultati: 1-10 |