Authors: Parala, H Devi, A Rogge, W Birkner, A Fischer, RA

Citation: H. Parala et al., Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors, J PHYS IV, 11(PR3), 2001, pp. 473-479

Authors: Devi, A Parala, H Rogge, W Wohlfart, A Birkner, A Fischer, RA

Citation: A. Devi et al., Growth of InN whiskers from single source precursor, J PHYS IV, 11(PR3), 2001, pp. 577-584

Authors: Fischer, RA Wohlfart, A Devi, A Rogge, W

Citation: Ra. Fischer et al., Growth kinetics of GaN thin films grown by OMVPE using single source precursors, MRS I J N S, 5, 2000, pp. NIL_136-NIL_141

Authors: Winkler, H Devi, A Manz, A Wohlfart, A Rogge, W Fischer, RA

Citation: H. Winkler et al., Epitaxy, composites and colloids of gallium nitride achieved by transformation of single source precursor, PHYS ST S-A, 177(1), 2000, pp. 27-35

Authors: Devi, A Rogge, W Fischer, RA Stowasser, F Sussek, H Becker, HW Schafer, J Wolfrum, J

Citation: A. Devi et al., OMVPE of GaN using (N-3)(2)Ga[(CH2)(3)N(CH3)(2)] (BAZIGA) in a cold wall reactor, J PHYS IV, 9(P8), 1999, pp. 589-595

Authors: Fischer, RA Miehr, A Hoffmann, H Rogge, W Boehme, C Frenking, G Herdtweck, E

Citation: Ra. Fischer et al., Transition metal substituted gallanes: Synthesis and x-ray structures of [(CO)(4)CoGaEt2(NC7H13)], [(PMe3)(CO)(3)CoGaCl2(NMe3)], [(CO)(4)CoGaCl3]K, and [(CO)(5)MnGaEt2(NC7H13), Z ANORG A C, 625(9), 1999, pp. 1466-1474