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Citation: H. Haag et al., Excitonic absorption of GaN epilayers on sapphire: Dynamics, intensity, and temperature dependence, PHYS REV B, 59(3), 1999, pp. 2254-2260

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Citation: M. Moret et al., MOCVD growth of cubic gallium nitride: Effect of V/III ratio, PHYS ST S-A, 176(1), 1999, pp. 493-496

Authors: Haag, H Gilliot, P Levy, R Honerlage, B Briot, O Ruffenach-Clur, S Aulombard, RL

Citation: H. Haag et al., Degenerate four-wave mixing experiments on GaN in the quasistationary regime, APPL PHYS L, 74(10), 1999, pp. 1436-1438