Authors: Chhowalla, M Teo, KBK Ducati, C Rupesinghe, NL Amaratunga, GAJ Ferrari, AC Roy, D Robertson, J Milne, WI

Citation: M. Chhowalla et al., Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition, J APPL PHYS, 90(10), 2001, pp. 5308-5317

Authors: Chhowalla, M Ducati, C Rupesinghe, NL Teo, KBK Amaratunga, GAJ

Citation: M. Chhowalla et al., Field emission from short and stubby vertically aligned carbon nanotubes, APPL PHYS L, 79(13), 2001, pp. 2079-2081

Authors: Alexandrou, I Baxendale, M Rupesinghe, NL Amaratunga, GAJ Kiely, CJ

Citation: I. Alexandrou et al., Field emission properties of nanocomposite carbon nitride films, J VAC SCI B, 18(6), 2000, pp. 2698-2703

Authors: Rupesinghe, NL Cole, RJ Chhowalla, M Amaratunga, GAJ Weightman, P

Citation: Nl. Rupesinghe et al., Tetrahedral amorphous carbon-silicon heterojunction band energy offsets, DIAM RELAT, 9(3-6), 2000, pp. 1148-1153

Authors: Rupesinghe, NL Chhowalla, M Amaratunga, GAJ Weightman, P Martin, D Unsworth, P Murray, J

Citation: Nl. Rupesinghe et al., Influence of the heterojunction on the field emission from tetrahedral amorphous carbon on Si, APPL PHYS L, 77(12), 2000, pp. 1908-1910