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Results: 1-25 | 26-37
Results: 1-25/37
DIRECT DETERMINATION OF THE PIEZOELECTRIC FIELD IN (111) STRAINED INGAAS GAAS MULTIPLE-QUANTUM-WELL P-I-N STRUCTURES BY PHOTOREFLECTANCE/
Authors: DICKEY SA MAJERFELD A SANCHEZROJAS JL SACEDON A MUNOZ E SANZHERVAS A AGUILAR M KIM BW
Citation: Sa. Dickey et al., DIRECT DETERMINATION OF THE PIEZOELECTRIC FIELD IN (111) STRAINED INGAAS GAAS MULTIPLE-QUANTUM-WELL P-I-N STRUCTURES BY PHOTOREFLECTANCE/, Microelectronic engineering, 43-4, 1998, pp. 171-177
RELAXATION MECHANISM OF INGAAS SINGLE AND GRADED LAYERS GROWN ON (111)B GAAS
Authors: ROJAS TC MOLINA SI SACEDON A VALTUENA F CALLEJA E GARCIA R
Citation: Tc. Rojas et al., RELAXATION MECHANISM OF INGAAS SINGLE AND GRADED LAYERS GROWN ON (111)B GAAS, Thin solid films, 317(1-2), 1998, pp. 270-273
STRUCTURAL STUDY OF ALGAAS INGAAS SUPERLATTICES GROWN BY MBE ON (III)B GAAS SUBSTRATES/
Authors: ROJAS TC MOLINA SI ROMERO MJ SACEDON A CALLEJA E GARCIA R
Citation: Tc. Rojas et al., STRUCTURAL STUDY OF ALGAAS INGAAS SUPERLATTICES GROWN BY MBE ON (III)B GAAS SUBSTRATES/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 106-109
HIGH-RESOLUTION X-RAY-DIFFRACTION CHARACTERIZATION OF PIEZOELECTRIC INGAAS GAAS MULTIQUANTUM WELLS AND SUPERLATTICES ON (111)B GAAS/
Authors: SANZHERVAS A LOPEZ M SACEDON A SANCHEZROJAS JL AGUILAR M LLORENTE C LORENZO R ABRIL EJ CALLEJA E MUNOZ E
Citation: A. Sanzhervas et al., HIGH-RESOLUTION X-RAY-DIFFRACTION CHARACTERIZATION OF PIEZOELECTRIC INGAAS GAAS MULTIQUANTUM WELLS AND SUPERLATTICES ON (111)B GAAS/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 329-337
CHARGE ACCUMULATION EFFECTS IN INGAAS GAAS [111]-ORIENTED PIEZOELECTRIC MULTIPLE-QUANTUM WELLS/
Authors: SANCHEZROJAS JL SACEDON A VALTUENA JF SANZHERVAS A IZPURA I CALLEJA E MUNOZ E ABRIL EJ AGUILAR M
Citation: Jl. Sanchezrojas et al., CHARGE ACCUMULATION EFFECTS IN INGAAS GAAS [111]-ORIENTED PIEZOELECTRIC MULTIPLE-QUANTUM WELLS/, Microelectronics, 28(8-10), 1997, pp. 767-775
APPLICATION OF HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY TO THE STRUCTURALSTUDY OF EPITAXIAL MULTILAYERS ON NOVEL INDEX SURFACES
Authors: SANZHERVAS A GARRIDO M AGUILAR M SACEDON A SANCHEZROJAS JL CALLEJA E MUNOZ E VILLAR C ABRIL EJ LOPEZ M
Citation: A. Sanzhervas et al., APPLICATION OF HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY TO THE STRUCTURALSTUDY OF EPITAXIAL MULTILAYERS ON NOVEL INDEX SURFACES, Microelectronics, 28(8-10), 1997, pp. 777-784
INFLUENCE OF THE SURFACE-MORPHOLOGY ON THE RELAXATION OF LOW-STRAINEDINXGA1-XAS LINEAR BUFFER STRUCTURES
Authors: VALTUENA JF SACEDON A ALVAREZ AL IZPURA I CALLE F CALLEJA E MACPHERSON G GOODHEW PJ PACHECO FJ GARCIA R MOLINA SI
Citation: Jf. Valtuena et al., INFLUENCE OF THE SURFACE-MORPHOLOGY ON THE RELAXATION OF LOW-STRAINEDINXGA1-XAS LINEAR BUFFER STRUCTURES, Journal of crystal growth, 182(3-4), 1997, pp. 281-291
OBSERVATION OF NON-TRIGONAL LATTICE DISTORTION IN PSEUDOMORPHIC INGAAS GAAS SUPERLATTICES GROWN ON MISORIENTED (111)B GAAS/
Authors: SANZHERVAS A AGUILAR M SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E VILLAR C ABRIL EJ LOPEZ M
Citation: A. Sanzhervas et al., OBSERVATION OF NON-TRIGONAL LATTICE DISTORTION IN PSEUDOMORPHIC INGAAS GAAS SUPERLATTICES GROWN ON MISORIENTED (111)B GAAS/, Journal of applied physics, 82(7), 1997, pp. 3297-3305
PREDICTABILITY OF PLASTIC RELAXATION IN METAMORPHIC EPITAXY
Authors: DUNSTAN DJ KIDD P BEANLAND R SACEDON A CALLEJA E GONZALEZ L GONZALEZ Y PACHECO FJ
Citation: Dj. Dunstan et al., PREDICTABILITY OF PLASTIC RELAXATION IN METAMORPHIC EPITAXY, Materials science and technology, 12(2), 1996, pp. 181-186
PHOTOINHIBITION OF THE QUANTUM-CONFINED STARK-EFFECT IN PIEZOELECTRICMULTIPLE-QUANTUM WELLS
Authors: SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E SANZHERVAS A DEBENITO G LOPEZ M
Citation: Jl. Sanchezrojas et al., PHOTOINHIBITION OF THE QUANTUM-CONFINED STARK-EFFECT IN PIEZOELECTRICMULTIPLE-QUANTUM WELLS, Physical review. B, Condensed matter, 53(23), 1996, pp. 15469-15472
TRANSIENT NEGATIVE PHOTOCURRENT AND OUT-OF-WELL DIPOLE KINETICS IN NOVEL PIEZOELECTRIC INGAAS GAAS MQW PIN DIODES/
Authors: IZPURA I VALTUENA JF SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E
Citation: I. Izpura et al., TRANSIENT NEGATIVE PHOTOCURRENT AND OUT-OF-WELL DIPOLE KINETICS IN NOVEL PIEZOELECTRIC INGAAS GAAS MQW PIN DIODES/, Solid-state electronics, 40(1-8), 1996, pp. 463-467
PROBING RESONANT-TUNNELING AND CHARGE ACCUMULATION VIA CAPACITANCE MEASUREMENTS IN [111]-ORIENTED INGAAS GAAS MQW AND SUPERLATTICES/
Authors: SANCHEZROJAS JL SACEDON A SANZHERVAS A CALLEJA E MUNOZ E ABRIL EJ
Citation: Jl. Sanchezrojas et al., PROBING RESONANT-TUNNELING AND CHARGE ACCUMULATION VIA CAPACITANCE MEASUREMENTS IN [111]-ORIENTED INGAAS GAAS MQW AND SUPERLATTICES/, Solid-state electronics, 40(1-8), 1996, pp. 591-595
NONUNIFORM STRAIN RELAXATION IN INXGA1-XAS LAYERS
Authors: ALVAREZ AL CALLE F SACEDON A CALLEJA E MUNOZ E GARCIA R GONZALEZ L GONZALEZ Y COLSON HG KIDD P BEANLAND R GOODHEW P
Citation: Al. Alvarez et al., NONUNIFORM STRAIN RELAXATION IN INXGA1-XAS LAYERS, Solid-state electronics, 40(1-8), 1996, pp. 647-651
COMPARISON OF THE CRYSTALLINE QUALITY OF STEP-GRADED AND CONTINUOUSLYGRADED INGAAS BUFFER LAYERS
Authors: KIDD P DUNSTAN DJ COLSON HG LOURENCO MA SACEDON A GONZALEZSANZ F GONZALEZ L GONZALEZ Y GARCIA R GONZALEZ D PACHECO FJ GOODHEW PJ
Citation: P. Kidd et al., COMPARISON OF THE CRYSTALLINE QUALITY OF STEP-GRADED AND CONTINUOUSLYGRADED INGAAS BUFFER LAYERS, Journal of crystal growth, 169(4), 1996, pp. 649-659
PER-CARRIER NONLINEAR-OPTICAL RESPONSE OF [111]-ORIENTED PIEZOELECTRIC INGAAS GAAS MULTIPLE-QUANTUM WELLS/
Authors: HUANG XR CARTWRIGHT AN HARKEN DR MCCALLUM DS SMIRL AL SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E
Citation: Xr. Huang et al., PER-CARRIER NONLINEAR-OPTICAL RESPONSE OF [111]-ORIENTED PIEZOELECTRIC INGAAS GAAS MULTIPLE-QUANTUM WELLS/, Journal of applied physics, 79(1), 1996, pp. 417-423
HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF PIEZOELECTRIC INGAAS GAAS MULTIQUANTUM-WELL P-I-N PHOTODIODES GROWN ON (111)B GAAS/
Authors: SANZHERVAS A AGUILAR M SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E ABRIL EJ LOPEZ M
Citation: A. Sanzhervas et al., HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF PIEZOELECTRIC INGAAS GAAS MULTIQUANTUM-WELL P-I-N PHOTODIODES GROWN ON (111)B GAAS/, Applied physics letters, 69(11), 1996, pp. 1574-1576
DESIGN AND CHARACTERIZATION OF (111)B INGAAS GAAS PIEZOELECTRIC SUPERLATTICES/
Authors: SANCHEZROJAS JL SACEDON A SANZHERVAS A CALLEJA E MUNOZ E ABRIL EJ AGUILAR M LOPEZ M
Citation: Jl. Sanchezrojas et al., DESIGN AND CHARACTERIZATION OF (111)B INGAAS GAAS PIEZOELECTRIC SUPERLATTICES/, Semiconductor science and technology, 10(8), 1995, pp. 1173-1176
DISPLACEMENT PHOTOCURRENTS AND SCREENING EFFECTS IN NOVEL PIEZOELECTRIC INGAAS GAAS MULTIPLE-QUANTUM-WELL P-I-N-DIODES/
Authors: VALTUENA JF IZPURA I SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E
Citation: Jf. Valtuena et al., DISPLACEMENT PHOTOCURRENTS AND SCREENING EFFECTS IN NOVEL PIEZOELECTRIC INGAAS GAAS MULTIPLE-QUANTUM-WELL P-I-N-DIODES/, Semiconductor science and technology, 10(11), 1995, pp. 1528-1533
STRAIN DIAGNOSIS OF (001)INGAAS AND (111)INGAAS LAYERS BY OPTICAL TECHNIQUES
Authors: CALLE F ALVAREZ AL SACEDON A CALLEJA E MUNOZ E
Citation: F. Calle et al., STRAIN DIAGNOSIS OF (001)INGAAS AND (111)INGAAS LAYERS BY OPTICAL TECHNIQUES, Physica status solidi. a, Applied research, 152(1), 1995, pp. 201-209
OPTICAL CHARACTERIZATION OF [111]B INGAAS LAYERS
Authors: CALLE F SACEDON A ALVAREZ AL CALLEJA E MUNO E COLSON HG KIDD P
Citation: F. Calle et al., OPTICAL CHARACTERIZATION OF [111]B INGAAS LAYERS, Microelectronics, 26(8), 1995, pp. 821-826
A RAMAN-SPECTROSCOPIC STUDY OF THE SI, BE, AND C INCORPORATION IN INXGA1-XAS RELAXED LAYERS
Authors: ALVAREZ AL CALLE F SACEDON A CALLEJA E MUNOZ E WAGNER J MAIER M MAZUELAS A PLOOG KH
Citation: Al. Alvarez et al., A RAMAN-SPECTROSCOPIC STUDY OF THE SI, BE, AND C INCORPORATION IN INXGA1-XAS RELAXED LAYERS, Journal of applied physics, 78(7), 1995, pp. 4690-4695
IN-WELL SCREENING NONLINEARITIES IN PIEZOELECTRIC MULTIPLE-QUANTUM WELLS
Authors: HUANG XR HARKEN DR CARTWRIGHT AN SMIRL AL SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E
Citation: Xr. Huang et al., IN-WELL SCREENING NONLINEARITIES IN PIEZOELECTRIC MULTIPLE-QUANTUM WELLS, Applied physics letters, 67(7), 1995, pp. 950-952
DISLOCATION BEHAVIOR IN INGAAS STEP-GRADED AND ALTERNATING STEP-GRADED STRUCTURES - DESIGN RULES FOR BUFFER FABRICATION
Authors: ARAUJO D GONZALEZ D GARCIA R SACEDON A CALLEJA E
Citation: D. Araujo et al., DISLOCATION BEHAVIOR IN INGAAS STEP-GRADED AND ALTERNATING STEP-GRADED STRUCTURES - DESIGN RULES FOR BUFFER FABRICATION, Applied physics letters, 67(24), 1995, pp. 3632-3634
CARRIER AND SCREENING DYNAMICS IN STRAINED [111]-ORIENTED MULTIPLE-QUANTUM WELLS
Authors: HARKEN DR HUANG XR MCCALLUM DS SMIRL AL SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E
Citation: Dr. Harken et al., CARRIER AND SCREENING DYNAMICS IN STRAINED [111]-ORIENTED MULTIPLE-QUANTUM WELLS, Applied physics letters, 66(7), 1995, pp. 857-859
DESIGN OF INGAAS LINEAR GRADED BUFFER STRUCTURES
Authors: SACEDON A GONZALEZSANZ F CALLEJA E MUNOZ E MOLINA SI PACHECO FJ ARAUJO D GARCIA R LOURENCO M YANG Z KIDD P DUNSTAN D
Citation: A. Sacedon et al., DESIGN OF INGAAS LINEAR GRADED BUFFER STRUCTURES, Applied physics letters, 66(24), 1995, pp. 3334-3336
Risultati: 1-25 | 26-37