Authors:
AKATSUKA M
SUEOKA K
KATAHAMA H
KOIE Y
SADAMITSU S
Citation: M. Akatsuka et al., EFFECT OF OXIDE PRECIPITATE SIZE ON SLIP GENERATION IN LARGE-DIAMETEREPITAXIAL WAFERS, JPN J A P 1, 37(9A), 1998, pp. 4663-4666
Authors:
OKUYAMA T
NAKAYAMA M
SADAMITSU S
NAKASHIMA J
TOMOKIYO Y
Citation: T. Okuyama et al., ANALYSIS OF LOCAL LATTICE STRAINS AROUND PLATE-LIKE OXYGEN PRECIPITATES IN CZOCHRALSKI-SILICON WAFERS BY CONVERGENT-BEAM ELECTRON-DIFFRACTION, JPN J A P 1, 36(6A), 1997, pp. 3359-3365
Authors:
OGUSHI S
SADAMITSU S
MARSDEN K
KOIKE Y
SANO M
Citation: S. Ogushi et al., GETTERING CHARACTERISTICS OF HEAVY-METAL IMPURITIES IN SILICON-WAFERSWITH POLYSILICON BACK SEAL AND INTERNAL GETTERING, JPN J A P 1, 36(11), 1997, pp. 6601-6606
Authors:
MARSDEN K
SADAMITSU S
YAMAMOTO T
SHIGEMATSU T
Citation: K. Marsden et al., GENERATION OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS EXHIBITING A RING-LIKE DISTRIBUTED STACKING-FAULT REGION, JPN J A P 1, 34(6A), 1995, pp. 2974-2980
Authors:
SADAMITSU S
OKUI M
SUEOKA K
MARSDEN K
SHIGEMATSU T
Citation: S. Sadamitsu et al., A MODEL FOR THE FORMATION OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON, JPN J A P 2, 34(5B), 1995, pp. 597-599
Authors:
MARSDEN K
SADAMITSU S
HOURAI M
SUMITA S
SHIGEMATSU T
Citation: K. Marsden et al., OBSERVATION OF RING-OSF NUCLEI IN CZ-SI USING SHORT-TIME ANNEALING AND INFRARED LIGHT-SCATTERING TOMOGRAPHY, Journal of the Electrochemical Society, 142(3), 1995, pp. 996-1001
Authors:
SADAMITSU S
UMENO S
KOIKE Y
HOURAI M
SUMITA S
SHIGEMATSU T
Citation: S. Sadamitsu et al., DEPENDENCE OF THE GROWN-IN DEFECT DISTRIBUTION ON GROWTH-RATES IN CZOCHRALSKI SILICON, JPN J A P 1, 32(9A), 1993, pp. 3675-3681
Authors:
UMENO S
SADAMITSU S
MURAKAMI H
HOURAI M
SUMITA S
SHIGEMATSU T
Citation: S. Umeno et al., AXIAL MICROSCOPIC DISTRIBUTION OF GROWN-IN DEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS, JPN J A P 2, 32(5B), 1993, pp. 120000699-120000702