Authors: SADYGOV ZY JEJER TV

Citation: Zy. Sadygov et Tv. Jejer, INFLUENCE OF CHARGE FLOW ALONG A SEMICONDUCTOR SURFACE ON THE NATURE OF THE MULTIPLICATION COEFFICIENT IN A SILICON-WIDE-GAP LAYER STRUCTURE, Technical physics letters, 23(4), 1997, pp. 324-325

Authors: ANTICH PP TSYGANOV EN MALAKHOV NA SADYGOV ZY

Citation: Pp. Antich et al., AVALANCHE PHOTO DIODE WITH LOCAL NEGATIVE FEEDBACK SENSITIVE TO UV, BLUE AND GREEN LIGHT, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 389(3), 1997, pp. 491-498

Authors: SADYGOV ZY ZHELEZNYKH IM KIRILLOVA TA

Citation: Zy. Sadygov et al., NOVEL LIGHT QUANTUM AND NUCLEAR-PARTICLE DETECTORS BASED ON THE AVALANCHE METAL-RESISTIVITY LAYER-SEMICONDUCTOR STRUCTURE, Applied surface science, 92, 1996, pp. 575-578

Authors: SADYGOV ZY ZHELEZNYKH IM MALAKHOV NA JEJER VN KIRILLOVA TA

Citation: Zy. Sadygov et al., AVALANCHE SEMICONDUCTOR RADIATION DETECTORS, IEEE transactions on nuclear science, 43(3), 1996, pp. 1009-1013