Authors: SALESSE A ALABEDRA R CHEN Y LAKRIMI M NICHOLAS RJ MASON NJ WALKER PJ

Citation: A. Salesse et al., IMPROVED PHOTOLUMINESCENCE FROM ELECTROCHEMICALLY PASSIVATED GASB, Semiconductor science and technology, 12(4), 1997, pp. 413-418

Authors: CHEN Y SYMONS DM LAKRIMI M SALESSE A HOUSTON GB NICHOLAS RJ MASON NJ WALKER PJ

Citation: Y. Chen et al., ONE-DIMENSIONAL TRANSPORT AND GATING OF INAS GASB STRUCTURES/, Superlattices and microstructures, 15(1), 1994, pp. 41-45

Authors: KRIER A BISSITT SA MASON NJ NICHOLAS RJ SALESSE A WALKER PJ

Citation: A. Krier et al., ELECTROLUMINESCENCE OUT TO 2.1 MU-M OBSERVED IN GASB IN(X)GA(1-X)SB QUANTUM-WELLS GROWN BY MOVPE/, Semiconductor science and technology, 9(1), 1994, pp. 87-90

Authors: GRAHAM RM JONES AC MASON NJ RUSHWORTH S SALESSE A SEONG TY BOOKER G SMITH L WALKER PJ

Citation: Rm. Graham et al., IMPROVED MATERIALS FOR MOVPE GROWTH OF GASB AND INSB, Semiconductor science and technology, 8(10), 1993, pp. 1797-1802